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Document Title Author Full Name Author Short Name Index Corresponding Address ResearcherID ResearcherID Author Name ⓘ ORCID ORCID Author Name Related Email
Enhanced switching ratio of sol-gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures ⓘ Kang, In-Man ⓘ Kang, IM ⓘ 8 Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea ⓘ ⓘ ⓘ ⓘ ⓘ j1jang@knu.ac.kr; ⓘ
Enhanced switching ratio of sol-gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures ⓘ Kang, In-Man ⓘ Kang, IM ⓘ 8 Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea ⓘ ⓘ ⓘ ⓘ ⓘ j1jang@knu.ac.kr; ⓘ
Enhanced switching ratio of sol-gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures ⓘ Jang, Jaewon ⓘ Jang, J ⓘ 9 교신저자 Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea ⓘ ⓘ ⓘ ⓘ ⓘ j1jang@knu.ac.kr; ⓘ
Enhanced switching ratio of sol-gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures ⓘ Jang, Jaewon ⓘ Jang, J ⓘ 9 교신저자 Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea ⓘ ⓘ ⓘ ⓘ ⓘ j1jang@knu.ac.kr; ⓘ
Enhanced Switching Reliability of Sol-Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field ⓘ Kim, Do-Won ⓘ Kim, D ⓘ 1 Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea ⓘ B-1877-2009 ⓘ Kim, Do-Yeon ⓘ ⓘ ⓘ ehdnjs5169@knu.ac.kr;dan7620@knu.ac.kr;yongsz@knu.ac.kr;kkd9506@knu.ac.kr;sinhlee@knu.ac.kr;jhbae@ee.knu.ac.kr;imkang@ee.knu.ac.kr;kke@kau.ac.kr;j1jang@knu.ac.kr; ⓘ
Enhanced Switching Reliability of Sol-Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field ⓘ Kim, Hyeon-Joong ⓘ Kim, HJ ⓘ 2 Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea ⓘ ⓘ ⓘ ⓘ ⓘ ehdnjs5169@knu.ac.kr;dan7620@knu.ac.kr;yongsz@knu.ac.kr;kkd9506@knu.ac.kr;sinhlee@knu.ac.kr;jhbae@ee.knu.ac.kr;imkang@ee.knu.ac.kr;kke@kau.ac.kr;j1jang@knu.ac.kr; ⓘ
Enhanced Switching Reliability of Sol-Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field ⓘ Lee, Won-Yong ⓘ Lee, WY ⓘ 3 Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea ⓘ ⓘ ⓘ 0000-0002-8056-4935 ⓘ Lee, Won-Yong ⓘ ehdnjs5169@knu.ac.kr;dan7620@knu.ac.kr;yongsz@knu.ac.kr;kkd9506@knu.ac.kr;sinhlee@knu.ac.kr;jhbae@ee.knu.ac.kr;imkang@ee.knu.ac.kr;kke@kau.ac.kr;j1jang@knu.ac.kr; ⓘ
Enhanced Switching Reliability of Sol-Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field ⓘ Kim, Kyoungdu ⓘ Kim, K ⓘ 4 Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea ⓘ ABG-7715-2021 ⓘ Kim, Byung Joo ⓘ ⓘ ⓘ ehdnjs5169@knu.ac.kr;dan7620@knu.ac.kr;yongsz@knu.ac.kr;kkd9506@knu.ac.kr;sinhlee@knu.ac.kr;jhbae@ee.knu.ac.kr;imkang@ee.knu.ac.kr;kke@kau.ac.kr;j1jang@knu.ac.kr; ⓘ
Enhanced Switching Reliability of Sol-Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field ⓘ Lee, Sin-Hyung ⓘ Lee, SH ⓘ 5 Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea ⓘ ABD-6425-2022 ⓘ Lee, Sin-Hyung ⓘ ⓘ ⓘ ehdnjs5169@knu.ac.kr;dan7620@knu.ac.kr;yongsz@knu.ac.kr;kkd9506@knu.ac.kr;sinhlee@knu.ac.kr;jhbae@ee.knu.ac.kr;imkang@ee.knu.ac.kr;kke@kau.ac.kr;j1jang@knu.ac.kr; ⓘ
Enhanced Switching Reliability of Sol-Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field ⓘ Lee, Sin-Hyung ⓘ Lee, SH ⓘ 5 Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea ⓘ ABD-6425-2022 ⓘ Lee, Sin-Hyung ⓘ ⓘ ⓘ ehdnjs5169@knu.ac.kr;dan7620@knu.ac.kr;yongsz@knu.ac.kr;kkd9506@knu.ac.kr;sinhlee@knu.ac.kr;jhbae@ee.knu.ac.kr;imkang@ee.knu.ac.kr;kke@kau.ac.kr;j1jang@knu.ac.kr; ⓘ
Enhanced Switching Reliability of Sol-Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field ⓘ Bae, Jin-Hyuk ⓘ Bae, JH ⓘ 6 Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea ⓘ ⓘ ⓘ 0000-0003-3217-1309 ⓘ Bae, Jin-Hyuk ⓘ ehdnjs5169@knu.ac.kr;dan7620@knu.ac.kr;yongsz@knu.ac.kr;kkd9506@knu.ac.kr;sinhlee@knu.ac.kr;jhbae@ee.knu.ac.kr;imkang@ee.knu.ac.kr;kke@kau.ac.kr;j1jang@knu.ac.kr; ⓘ
Enhanced Switching Reliability of Sol-Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field ⓘ Bae, Jin-Hyuk ⓘ Bae, JH ⓘ 6 Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea ⓘ ⓘ ⓘ 0000-0003-3217-1309 ⓘ Bae, Jin-Hyuk ⓘ ehdnjs5169@knu.ac.kr;dan7620@knu.ac.kr;yongsz@knu.ac.kr;kkd9506@knu.ac.kr;sinhlee@knu.ac.kr;jhbae@ee.knu.ac.kr;imkang@ee.knu.ac.kr;kke@kau.ac.kr;j1jang@knu.ac.kr; ⓘ
Enhanced Switching Reliability of Sol-Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field ⓘ Kang, In-Man ⓘ Kang, IM ⓘ 7 Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea ⓘ ⓘ ⓘ 0000-0002-7726-9740 ⓘ Kang, In Man ⓘ ehdnjs5169@knu.ac.kr;dan7620@knu.ac.kr;yongsz@knu.ac.kr;kkd9506@knu.ac.kr;sinhlee@knu.ac.kr;jhbae@ee.knu.ac.kr;imkang@ee.knu.ac.kr;kke@kau.ac.kr;j1jang@knu.ac.kr; ⓘ
Enhanced Switching Reliability of Sol-Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field ⓘ Kang, In-Man ⓘ Kang, IM ⓘ 7 Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea ⓘ ⓘ ⓘ 0000-0002-7726-9740 ⓘ Kang, In Man ⓘ ehdnjs5169@knu.ac.kr;dan7620@knu.ac.kr;yongsz@knu.ac.kr;kkd9506@knu.ac.kr;sinhlee@knu.ac.kr;jhbae@ee.knu.ac.kr;imkang@ee.knu.ac.kr;kke@kau.ac.kr;j1jang@knu.ac.kr; ⓘ
Enhanced Switching Reliability of Sol-Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field ⓘ Kim, Kwangeun ⓘ Kim, K ⓘ 8 Korea Aerosp Univ, Sch Elect & Informat Engn, Goyang 10540, South Korea ⓘ ⓘ ⓘ 0000-0001-6942-7481 ⓘ Kim, Kwangeun ⓘ ehdnjs5169@knu.ac.kr;dan7620@knu.ac.kr;yongsz@knu.ac.kr;kkd9506@knu.ac.kr;sinhlee@knu.ac.kr;jhbae@ee.knu.ac.kr;imkang@ee.knu.ac.kr;kke@kau.ac.kr;j1jang@knu.ac.kr; ⓘ
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