연구성과로 돌아가기
2022 연구성과별 연구자 정보 (875 / 2879)
※ 현재 Web of Science 저자 정보만 집계되어 있습니다.
※ 컨트롤 + 클릭으로 열별 다중 정렬 가능합니다.
Excel 다운로드
| Document Title | Author Full Name | Author Short Name | Index | Corresponding | Address | ResearcherID | ResearcherID Author Name | ORCID | ORCID Author Name | Related Email |
|---|---|---|---|---|---|---|---|---|---|---|
| Enhanced stability and rate performance of zinc-doped cobalt hexacyanoferrate (CoZnHCF) by the limited crystal growth and reduced distortion | Kim, Jihwan | Kim, J | 1 | Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea | lilicmu@alumni.cmu.edu;sangeun@knu.ac.kr; | |||||
| Enhanced stability and rate performance of zinc-doped cobalt hexacyanoferrate (CoZnHCF) by the limited crystal growth and reduced distortion | Yi, Seong-Hoon | Yi, SH | 2 | Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea | HGC-6912-2022 | Yi, Seonghoon | lilicmu@alumni.cmu.edu;sangeun@knu.ac.kr; | |||
| Enhanced stability and rate performance of zinc-doped cobalt hexacyanoferrate (CoZnHCF) by the limited crystal growth and reduced distortion | Li, Li | Li, L | 3 | 교신저자 | Northeastern Univ, State Key Lab Rolling & Automat, Shenyang 110819, Liaoning, Peoples R China | ABF-1706-2020 | Li, Li | 0000-0003-2308-916X | Li, Li | lilicmu@alumni.cmu.edu;sangeun@knu.ac.kr; |
| Enhanced stability and rate performance of zinc-doped cobalt hexacyanoferrate (CoZnHCF) by the limited crystal growth and reduced distortion | Li, Li | Li, L | 3 | 교신저자 | Northeastern Univ, Sch Met, Shenyang 110819, Liaoning, Peoples R China | ABF-1706-2020 | Li, Li | 0000-0003-2308-916X | Li, Li | lilicmu@alumni.cmu.edu;sangeun@knu.ac.kr; |
| Enhanced stability and rate performance of zinc-doped cobalt hexacyanoferrate (CoZnHCF) by the limited crystal growth and reduced distortion | Chun, Sang-Eun | Chun, SE | 4 | 교신저자 | Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea | lilicmu@alumni.cmu.edu;sangeun@knu.ac.kr; | ||||
| Enhanced stability and rate performance of zinc-doped cobalt hexacyanoferrate (CoZnHCF) by the limited crystal growth and reduced distortion | Chun, Sang-Eun | Chun, SE | 4 | 교신저자 | Kyungpook Natl Univ, Sch Ind Technol Adv, Daegu 41566, South Korea | lilicmu@alumni.cmu.edu;sangeun@knu.ac.kr; | ||||
| Enhanced switching ratio of sol-gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures | Kim, Kyoungdu | Kim, K | 1 | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea | j1jang@knu.ac.kr; | |||||
| Enhanced switching ratio of sol-gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures | Lee, Changmin | Lee, CM | 2 | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea | j1jang@knu.ac.kr; | |||||
| Enhanced switching ratio of sol-gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures | Lee, Won-Yong | Lee, WY | 3 | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea | j1jang@knu.ac.kr; | |||||
| Enhanced switching ratio of sol-gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures | Kim, Do Won | Kim, D | 4 | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea | B-1877-2009 | Kim, Do-Yeon | j1jang@knu.ac.kr; | |||
| Enhanced switching ratio of sol-gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures | Kim, Hyeon Joong | Kim, HJ | 5 | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea | ABG-7715-2021 | Kim, Byung Joo | j1jang@knu.ac.kr; | |||
| Enhanced switching ratio of sol-gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures | Lee, Sin-Hyung | Lee, SH | 6 | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea | ABD-6425-2022 | Lee, Sin-Hyung | 0000-0002-8723-439X | Lee, Sin-Hyung | j1jang@knu.ac.kr; | |
| Enhanced switching ratio of sol-gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures | Lee, Sin-Hyung | Lee, SH | 6 | Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea | ABD-6425-2022 | Lee, Sin-Hyung | 0000-0002-8723-439X | Lee, Sin-Hyung | j1jang@knu.ac.kr; | |
| Enhanced switching ratio of sol-gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures | Bae, Jin-Hyuk | Bae, JH | 7 | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea | j1jang@knu.ac.kr; | |||||
| Enhanced switching ratio of sol-gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures | Bae, Jin-Hyuk | Bae, JH | 7 | Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea | j1jang@knu.ac.kr; |
페이지 이동: