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2023 연구성과별 연구자 정보 (56 / 2675)
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| Document Title | Author Full Name | Author Short Name | Index | Corresponding | Address | ResearcherID | ResearcherID Author Name | ORCID | ORCID Author Name | Related Email |
|---|---|---|---|---|---|---|---|---|---|---|
| A new method for age-dating the formation of bars in disc galaxies The TIMER view on NGC1433's old bar and the inside-out growth of its nuclear disc | Martin-Navarro, Ignacio | Martín-Navarro, I | 16 | Univ La Laguna, Dept Astrofis, Tenerife 38200, Spain | F-5882-2016 | Martin-Navarro, Ignacio | 0000-0001-8494-0080 | Martin-Navarro, Ignacio | camila.desafreitas@eso.org; | |
| A new method for age-dating the formation of bars in disc galaxies The TIMER view on NGC1433's old bar and the inside-out growth of its nuclear disc | Mendez-Abreu, Jairo | Mendez-Abreu, J | 17 | Inst Astrofis Canarias, Calle Via Lactea S-N, Tenerife 38205, Spain | camila.desafreitas@eso.org; | |||||
| A new method for age-dating the formation of bars in disc galaxies The TIMER view on NGC1433's old bar and the inside-out growth of its nuclear disc | Mendez-Abreu, Jairo | Mendez-Abreu, J | 17 | Univ La Laguna, Dept Astrofis, Tenerife 38200, Spain | camila.desafreitas@eso.org; | |||||
| A new method for age-dating the formation of bars in disc galaxies The TIMER view on NGC1433's old bar and the inside-out growth of its nuclear disc | Neumann, Justus | Neumann, J | 18 | Max Planck Inst Astron, Konigstuhl 17, D-69117 Heidelberg, Germany | camila.desafreitas@eso.org; | |||||
| A new method for age-dating the formation of bars in disc galaxies The TIMER view on NGC1433's old bar and the inside-out growth of its nuclear disc | Neumann, Justus | Neumann, J | 18 | Univ Portsmouth, Inst Cosmol & Gravitat, Burnaby Rd, Portsmouth PO1 3FX, Hants, England | camila.desafreitas@eso.org; | |||||
| A new method for age-dating the formation of bars in disc galaxies The TIMER view on NGC1433's old bar and the inside-out growth of its nuclear disc | Querejeta, Miguel | Querejeta, M | 19 | Observ Astron Nacl, C Alfonso XII 3, Madrid 28014, Spain | KVY-3638-2024 | Querejeta, Miguel | 0000-0002-0472-1011 | Querejeta, Miguel | camila.desafreitas@eso.org; | |
| A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation | Kim, Hyo-Jin | Kim, HJ | 1 | Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea | H-6157-2013 | Kim, Yong | dae-hyun.kim@ee.knu.ac.kr; | |||
| A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation | Yoo, Ji-Hoon | Yoo, JH | 2 | Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea | dae-hyun.kim@ee.knu.ac.kr; | |||||
| A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation | Park, Wan-Soo | Park, WS | 3 | Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea | dae-hyun.kim@ee.knu.ac.kr; | |||||
| A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation | Yun, Seung-Won | Yun, SW | 4 | Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea | dae-hyun.kim@ee.knu.ac.kr; | |||||
| A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation | Jo, Hyeon-Bhin | Jo, HB | 5 | Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea | HLW-9536-2023 | Jo, Hyeon Bhin | dae-hyun.kim@ee.knu.ac.kr; | |||
| A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation | Lee, In-Geun | Lee, IG | 6 | Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea | dae-hyun.kim@ee.knu.ac.kr; | |||||
| A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation | Kim, Tae-Woo | Kim, TW | 7 | Univ Ulsan, Dept Elect Engn, Ulsan 44610, South Korea | 0000-0003-0234-5080 | Kim, Tae-Woo | dae-hyun.kim@ee.knu.ac.kr; | |||
| A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation | Tsutsumi, Takuya | Tsutsumi, T | 8 | NTT Device Technol Labs, Atsugi 2430198, Japan | dae-hyun.kim@ee.knu.ac.kr; | |||||
| A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation | Sugiyama, Hiroki | Sugiyama, H | 9 | NTT Device Technol Labs, Atsugi 2430198, Japan | P-6476-2019 | Sugiyama, Hiroki | 0000-0002-6301-857X | Sugiyama, Hiroki | dae-hyun.kim@ee.knu.ac.kr; |
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