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2023 연구성과별 연구자 정보 (56 / 2675)

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Document Title Author Full Name Author Short Name Index Corresponding Address ResearcherID ResearcherID Author Name ORCID ORCID Author Name Related Email
A new method for age-dating the formation of bars in disc galaxies The TIMER view on NGC1433's old bar and the inside-out growth of its nuclear disc Martin-Navarro, Ignacio Martín-Navarro, I 16 Univ La Laguna, Dept Astrofis, Tenerife 38200, Spain F-5882-2016 Martin-Navarro, Ignacio 0000-0001-8494-0080 Martin-Navarro, Ignacio camila.desafreitas@eso.org;
A new method for age-dating the formation of bars in disc galaxies The TIMER view on NGC1433's old bar and the inside-out growth of its nuclear disc Mendez-Abreu, Jairo Mendez-Abreu, J 17 Inst Astrofis Canarias, Calle Via Lactea S-N, Tenerife 38205, Spain camila.desafreitas@eso.org;
A new method for age-dating the formation of bars in disc galaxies The TIMER view on NGC1433's old bar and the inside-out growth of its nuclear disc Mendez-Abreu, Jairo Mendez-Abreu, J 17 Univ La Laguna, Dept Astrofis, Tenerife 38200, Spain camila.desafreitas@eso.org;
A new method for age-dating the formation of bars in disc galaxies The TIMER view on NGC1433's old bar and the inside-out growth of its nuclear disc Neumann, Justus Neumann, J 18 Max Planck Inst Astron, Konigstuhl 17, D-69117 Heidelberg, Germany camila.desafreitas@eso.org;
A new method for age-dating the formation of bars in disc galaxies The TIMER view on NGC1433's old bar and the inside-out growth of its nuclear disc Neumann, Justus Neumann, J 18 Univ Portsmouth, Inst Cosmol & Gravitat, Burnaby Rd, Portsmouth PO1 3FX, Hants, England camila.desafreitas@eso.org;
A new method for age-dating the formation of bars in disc galaxies The TIMER view on NGC1433's old bar and the inside-out growth of its nuclear disc Querejeta, Miguel Querejeta, M 19 Observ Astron Nacl, C Alfonso XII 3, Madrid 28014, Spain KVY-3638-2024 Querejeta, Miguel 0000-0002-0472-1011 Querejeta, Miguel camila.desafreitas@eso.org;
A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation Kim, Hyo-Jin Kim, HJ 1 Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea H-6157-2013 Kim, Yong dae-hyun.kim@ee.knu.ac.kr;
A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation Yoo, Ji-Hoon Yoo, JH 2 Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea dae-hyun.kim@ee.knu.ac.kr;
A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation Park, Wan-Soo Park, WS 3 Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea dae-hyun.kim@ee.knu.ac.kr;
A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation Yun, Seung-Won Yun, SW 4 Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea dae-hyun.kim@ee.knu.ac.kr;
A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation Jo, Hyeon-Bhin Jo, HB 5 Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea HLW-9536-2023 Jo, Hyeon Bhin dae-hyun.kim@ee.knu.ac.kr;
A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation Lee, In-Geun Lee, IG 6 Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea dae-hyun.kim@ee.knu.ac.kr;
A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation Kim, Tae-Woo Kim, TW 7 Univ Ulsan, Dept Elect Engn, Ulsan 44610, South Korea 0000-0003-0234-5080 Kim, Tae-Woo dae-hyun.kim@ee.knu.ac.kr;
A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation Tsutsumi, Takuya Tsutsumi, T 8 NTT Device Technol Labs, Atsugi 2430198, Japan dae-hyun.kim@ee.knu.ac.kr;
A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation Sugiyama, Hiroki Sugiyama, H 9 NTT Device Technol Labs, Atsugi 2430198, Japan P-6476-2019 Sugiyama, Hiroki 0000-0002-6301-857X Sugiyama, Hiroki dae-hyun.kim@ee.knu.ac.kr;
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