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| Document Title | Author Full Name | Author Short Name | Index | Corresponding | Address | ResearcherID | ResearcherID Author Name | ORCID | ORCID Author Name | Related Email |
|---|---|---|---|---|---|---|---|---|---|---|
| Design and Analysis of an Approximate Adder with Hybrid Error Reduction | Seo, Hyoju | Seo, H | 1 | Kyungpook Natl Univ, Sch Comp Sci & Engn, Daegu 41566, South Korea | GSD-8672-2022 | Seo, Hyoju | hyoju@knu.ac.kr;yoonseok.yang@intel.com;yongtae@knu.ac.kr; | |||
| Design and Analysis of an Approximate Adder with Hybrid Error Reduction | Yang, Yoon Seok | Yang, YS | 2 | Intel Corp, Intel Labs, Santa Clara, CA 95054 USA | AGQ-1174-2022 | Yang, Yoon | hyoju@knu.ac.kr;yoonseok.yang@intel.com;yongtae@knu.ac.kr; | |||
| Design and Analysis of an Approximate Adder with Hybrid Error Reduction | Kim, Yongtae | Kim, Y | 3 | 교신저자 | Kyungpook Natl Univ, Sch Comp Sci & Engn, Daegu 41566, South Korea | 0000-0001-7039-973X | KIM, YONGTAE | hyoju@knu.ac.kr;yoonseok.yang@intel.com;yongtae@knu.ac.kr; | ||
| Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density | Yoon, Young Jun | Yoon, YJ | 1 | Korea Atom Energy Res Inst, Korea Multipurpose Accelerator Complex, Gyeongju 38180, South Korea | 0000-0001-8755-5057 | Yoon, Young Jun | yjyoon@kaeri.re.kr;jslee8@kaeri.re.kr;imkang@ee.knu.ac.kr;jlee@ee.knu.ac.kr;dongseokkim@kaeri.re.kr; | |||
| Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density | Lee, Jae Sang | Lee, JS | 2 | Korea Atom Energy Res Inst, Korea Multipurpose Accelerator Complex, Gyeongju 38180, South Korea | yjyoon@kaeri.re.kr;jslee8@kaeri.re.kr;imkang@ee.knu.ac.kr;jlee@ee.knu.ac.kr;dongseokkim@kaeri.re.kr; | |||||
| Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density | Kang, In Man | Kang, IM | 3 | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea | yjyoon@kaeri.re.kr;jslee8@kaeri.re.kr;imkang@ee.knu.ac.kr;jlee@ee.knu.ac.kr;dongseokkim@kaeri.re.kr; | |||||
| Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density | Lee, Jung Hee | Lee, JH | 4 | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea | yjyoon@kaeri.re.kr;jslee8@kaeri.re.kr;imkang@ee.knu.ac.kr;jlee@ee.knu.ac.kr;dongseokkim@kaeri.re.kr; | |||||
| Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density | Kim, Dong Seok | Kim, DS | 5 | 교신저자 | Korea Atom Energy Res Inst, Korea Multipurpose Accelerator Complex, Gyeongju 38180, South Korea | yjyoon@kaeri.re.kr;jslee8@kaeri.re.kr;imkang@ee.knu.ac.kr;jlee@ee.knu.ac.kr;dongseokkim@kaeri.re.kr; | ||||
| Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage | Jang, Won Douk | Jang, WD | 1 | Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea | ||||||
| Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage | Yoon, Young Jun | Yoon, YJ | 2 | KIST Korea Inst Sci & Technol, Ctr BioMicroSyst, Brain Sci Inst, 5 Hwarang Ro 14 Gil, Seoul 02792, South Korea | ||||||
| Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage | Cho, Min Su | Cho, MS | 3 | Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea | ||||||
| Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage | Jung, Jun Hyeok | Jung, JH | 4 | Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea | ||||||
| Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage | Lee, Sang Ho | Lee, SH | 5 | Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea | MCX-8396-2025 | Lee, Sang Ho | 0000-0002-4954-3861 | Lee, Sang Ho | ||
| Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage | Jang, Jaewon | Jang, J | 6 | Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea | ||||||
| Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage | Bae, Jin-Hyuk | Bae, JH | 7 | Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea |
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