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| Document Title | Author Full Name | Author Short Name | Index | Corresponding | Address | ResearcherID | ResearcherID Author Name | ORCID | ORCID Author Name | Related Email |
|---|---|---|---|---|---|---|---|---|---|---|
| Gate oxide technology relieving word-line break in 10 nm-class DRAMs | Jang, Dongkyu | Jang, D | 1 | Samsung Elect, DRAM Yield Enhancement Team, Mfg & Proc Technol, Suwon 18448, Gyeonggi Do, South Korea | 0009-0007-8770-2652 | Jang, Dongkyu | yhong@pusan.ac.kr; | |||
| Gate oxide technology relieving word-line break in 10 nm-class DRAMs | Park, Taehoon | Park, T | 2 | Samsung Elect, DRAM Yield Enhancement Team, Mfg & Proc Technol, Suwon 18448, Gyeonggi Do, South Korea | yhong@pusan.ac.kr; | |||||
| Gate oxide technology relieving word-line break in 10 nm-class DRAMs | Lee, Inkyum | Lee, I | 3 | Samsung Elect, DRAM Yield Enhancement Team, Mfg & Proc Technol, Suwon 18448, Gyeonggi Do, South Korea | yhong@pusan.ac.kr; | |||||
| Gate oxide technology relieving word-line break in 10 nm-class DRAMs | Kim, Jongkyu | Kim, J | 4 | Samsung Elect, DRAM Yield Enhancement Team, Mfg & Proc Technol, Suwon 18448, Gyeonggi Do, South Korea | yhong@pusan.ac.kr; | |||||
| Gate oxide technology relieving word-line break in 10 nm-class DRAMs | Ahn, Sang Bin | Ahn, SB | 5 | Samsung Elect, DRAM Yield Enhancement Team, Mfg & Proc Technol, Suwon 18448, Gyeonggi Do, South Korea | yhong@pusan.ac.kr; | |||||
| Gate oxide technology relieving word-line break in 10 nm-class DRAMs | Lee, Jieun | Lee, J | 6 | Samsung Elect, DRAM Yield Enhancement Team, Mfg & Proc Technol, Suwon 18448, Gyeonggi Do, South Korea | yhong@pusan.ac.kr; | |||||
| Gate oxide technology relieving word-line break in 10 nm-class DRAMs | Kim, Shindeuk | Kim, S | 7 | Samsung Elect, DRAM Yield Enhancement Team, Mfg & Proc Technol, Suwon 18448, Gyeonggi Do, South Korea | yhong@pusan.ac.kr; | |||||
| Gate oxide technology relieving word-line break in 10 nm-class DRAMs | Ban, Hyodong | Ban, H | 8 | Samsung Elect, DRAM Yield Enhancement Team, Mfg & Proc Technol, Suwon 18448, Gyeonggi Do, South Korea | yhong@pusan.ac.kr; | |||||
| Gate oxide technology relieving word-line break in 10 nm-class DRAMs | Woo, Sung Yun | Woo, SY | 9 | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu Si 41566, South Korea | yhong@pusan.ac.kr; | |||||
| Gate oxide technology relieving word-line break in 10 nm-class DRAMs | Hong, Yoonki | Hong, Y | 10 | 교신저자 | Pusan Natl Univ, Sch Elect & Elect Engn, Busan Si 46241, South Korea | yhong@pusan.ac.kr; | ||||
| GDoT: A gated dual domain transformer for enhanced MRI off-resonance correction | Ahn, Jaesin | Ahn, J | 1 | Kyungpook Natl Univ, Dept Artificial Intelligence, 80 Daehak Ro, Daegu 41566, South Korea | heechul@knu.ac.kr; | |||||
| GDoT: A gated dual domain transformer for enhanced MRI off-resonance correction | Jung, Heechul | Jung, H | 2 | 교신저자 | Kyungpook Natl Univ, Dept Artificial Intelligence, 80 Daehak Ro, Daegu 41566, South Korea | heechul@knu.ac.kr; | ||||
| Gene Expression Depends on the Interplay Among Growth, Resource Biogenesis, and Nutrient Quality | Kim, Juhyun | Kim, J | 1 | Kyungpook Natl Univ, Sch Life Sci, BK21 FOUR KNU Creat BioRes Grp, Daegu 41566, South Korea | a.darlington1@warwick.ac.uk; j.jimenez@imperial.ac.uk; | |||||
| Gene Expression Depends on the Interplay Among Growth, Resource Biogenesis, and Nutrient Quality | Darlington, Alexander P. S. | Darlington, APS | 2 | 교신저자 | Univ Warwick, Sch Engn, Coventry CV4 7AL, England | a.darlington1@warwick.ac.uk; j.jimenez@imperial.ac.uk; | ||||
| Gene Expression Depends on the Interplay Among Growth, Resource Biogenesis, and Nutrient Quality | Munoz-Montero, Said | Muñoz-Montero, S | 3 | Imperial Coll London, Dept Life Sci, South Kensington Campus, London SW7 2AZ, England | a.darlington1@warwick.ac.uk; j.jimenez@imperial.ac.uk; |
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