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Document Title Author Full Name Author Short Name Index Corresponding Address ResearcherID ResearcherID Author Name ORCID ORCID Author Name Related Email
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Bae, Youngho Bae, Y 5 Uiduk Univ, Dept IT Convergence, Gyeongju 38004, South Korea sjchang@etri.re.kr;dongseokkim@kaeri.re.kr;twkim78@ulsan.ac.kr;jlee@ee.knu.ac.kr;yhbae@uu.ac.kr;hujung@etri.re.kr;kangsc817@etri.re.kr;khc@etri.re.kr;nohys@etri.re.kr;shl@etri.re.kr;sikim@etri.re.kr;hkahn@etri.re.kr;jwlim@etri.re.kr;
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Jung, Hyun-Wook Jung, HW 6 Elect & Telecommun Res Inst, Convergence Res Dept, Def Mat & Components, Daejeon 34129, South Korea F-6898-2013 Jung, Hyun sjchang@etri.re.kr;dongseokkim@kaeri.re.kr;twkim78@ulsan.ac.kr;jlee@ee.knu.ac.kr;yhbae@uu.ac.kr;hujung@etri.re.kr;kangsc817@etri.re.kr;khc@etri.re.kr;nohys@etri.re.kr;shl@etri.re.kr;sikim@etri.re.kr;hkahn@etri.re.kr;jwlim@etri.re.kr;
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Kang, Soo Cheol Kang, SC 7 Elect & Telecommun Res Inst, Convergence Res Dept, Def Mat & Components, Daejeon 34129, South Korea 0000-0002-2244-1363 Kang, Soo Cheol sjchang@etri.re.kr;dongseokkim@kaeri.re.kr;twkim78@ulsan.ac.kr;jlee@ee.knu.ac.kr;yhbae@uu.ac.kr;hujung@etri.re.kr;kangsc817@etri.re.kr;khc@etri.re.kr;nohys@etri.re.kr;shl@etri.re.kr;sikim@etri.re.kr;hkahn@etri.re.kr;jwlim@etri.re.kr;
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Kim, Haecheon Kim, H 8 Elect & Telecommun Res Inst, Convergence Res Dept, Def Mat & Components, Daejeon 34129, South Korea sjchang@etri.re.kr;dongseokkim@kaeri.re.kr;twkim78@ulsan.ac.kr;jlee@ee.knu.ac.kr;yhbae@uu.ac.kr;hujung@etri.re.kr;kangsc817@etri.re.kr;khc@etri.re.kr;nohys@etri.re.kr;shl@etri.re.kr;sikim@etri.re.kr;hkahn@etri.re.kr;jwlim@etri.re.kr;
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Noh, Youn-Sub Noh, YS 9 Elect & Telecommun Res Inst, Convergence Res Dept, Def Mat & Components, Daejeon 34129, South Korea sjchang@etri.re.kr;dongseokkim@kaeri.re.kr;twkim78@ulsan.ac.kr;jlee@ee.knu.ac.kr;yhbae@uu.ac.kr;hujung@etri.re.kr;kangsc817@etri.re.kr;khc@etri.re.kr;nohys@etri.re.kr;shl@etri.re.kr;sikim@etri.re.kr;hkahn@etri.re.kr;jwlim@etri.re.kr;
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Lee, Sang-Heung Lee, SH 10 Elect & Telecommun Res Inst, Convergence Res Dept, Def Mat & Components, Daejeon 34129, South Korea sjchang@etri.re.kr;dongseokkim@kaeri.re.kr;twkim78@ulsan.ac.kr;jlee@ee.knu.ac.kr;yhbae@uu.ac.kr;hujung@etri.re.kr;kangsc817@etri.re.kr;khc@etri.re.kr;nohys@etri.re.kr;shl@etri.re.kr;sikim@etri.re.kr;hkahn@etri.re.kr;jwlim@etri.re.kr;
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Kim, Seong-Il Kim, SI 11 Elect & Telecommun Res Inst, Convergence Res Dept, Def Mat & Components, Daejeon 34129, South Korea H-6157-2013 Kim, Yong sjchang@etri.re.kr;dongseokkim@kaeri.re.kr;twkim78@ulsan.ac.kr;jlee@ee.knu.ac.kr;yhbae@uu.ac.kr;hujung@etri.re.kr;kangsc817@etri.re.kr;khc@etri.re.kr;nohys@etri.re.kr;shl@etri.re.kr;sikim@etri.re.kr;hkahn@etri.re.kr;jwlim@etri.re.kr;
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Ahn, Ho-Kyun Ahn, HK 12 Elect & Telecommun Res Inst, Convergence Res Dept, Def Mat & Components, Daejeon 34129, South Korea sjchang@etri.re.kr;dongseokkim@kaeri.re.kr;twkim78@ulsan.ac.kr;jlee@ee.knu.ac.kr;yhbae@uu.ac.kr;hujung@etri.re.kr;kangsc817@etri.re.kr;khc@etri.re.kr;nohys@etri.re.kr;shl@etri.re.kr;sikim@etri.re.kr;hkahn@etri.re.kr;jwlim@etri.re.kr;
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Lim, Jong-Won Lim, JW 13 Elect & Telecommun Res Inst, Convergence Res Dept, Def Mat & Components, Daejeon 34129, South Korea sjchang@etri.re.kr;dongseokkim@kaeri.re.kr;twkim78@ulsan.ac.kr;jlee@ee.knu.ac.kr;yhbae@uu.ac.kr;hujung@etri.re.kr;kangsc817@etri.re.kr;khc@etri.re.kr;nohys@etri.re.kr;shl@etri.re.kr;sikim@etri.re.kr;hkahn@etri.re.kr;jwlim@etri.re.kr;
Computation of Molecular Electron Affinities Using an Ensemble Density Functional Theory Method Filatov, Michael Filatov, M 1 교신저자 Kyungpook Natl Univ, Dept Chem, Daegu 702701, South Korea mike.filatov@gmail.com;cheolho.choi@gmail.com;
Computation of Molecular Electron Affinities Using an Ensemble Density Functional Theory Method Lee, Seunghoon Lee, S 2 CALTECH, Div Chem & Chem Engn, Pasadena, CA 91125 USA AAB-4846-2021 Lee, Seunghoon 0000-0003-3665-587X Lee, Seunghoon mike.filatov@gmail.com;cheolho.choi@gmail.com;
Computation of Molecular Electron Affinities Using an Ensemble Density Functional Theory Method Nakata, Hiroya Nakata, H 3 R&D Ctr Kagoshima, Kagoshima 8994312, Japan V-3205-2018 Nakata, Hiroya mike.filatov@gmail.com;cheolho.choi@gmail.com;
Computation of Molecular Electron Affinities Using an Ensemble Density Functional Theory Method Choi, Cheol Ho Choi, CH 4 교신저자 Kyungpook Natl Univ, Dept Chem, Daegu 702701, South Korea AAA-4705-2020 Choi, Cheol Ho 0000-0002-8757-1396 Choi, Cheol Ho mike.filatov@gmail.com;cheolho.choi@gmail.com;
Computation of Molecular Ionization Energies Using an Ensemble Density Functional Theory Method Filatov, Michael Filatov, M 1 교신저자 Kyungpook Natl Univ, Dept Chem, Daegu 702701, South Korea mike.filatov@gmail.com;cheolho.choi@gmail.com;
Computation of Molecular Ionization Energies Using an Ensemble Density Functional Theory Method Lee, Seunghoon Lee, S 2 CALTECH, Div Chem & Chem Engn, Pasadena, CA 91125 USA AAB-4846-2021 Lee, Seunghoon 0000-0003-3665-587X Lee, Seunghoon mike.filatov@gmail.com;cheolho.choi@gmail.com;
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