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2024 연구성과별 연구자 정보 (27 / 2344)
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| Document Title | Author Full Name | Author Short Name | Index | Corresponding | Address | ResearcherID | ResearcherID Author Name | ORCID | ORCID Author Name | Related Email |
|---|---|---|---|---|---|---|---|---|---|---|
| A Current Development of Energy Harvesting Systems for Energy-Independent Bioimplantable Biosensors | Lang, Philippe | Lang, P | 3 | Univ Paris, ITODYS, CNRS UMR 7086, 15 rue Jean Antoine Baif, F-75205 Paris 13, France | E-5192-2012 | lang, philippe | jhbae@ee.knu.ac.kr;hyeok.kim@uos.ac.kr; | |||
| A Current Development of Energy Harvesting Systems for Energy-Independent Bioimplantable Biosensors | Bae, Jin-Hyuk | Bae, JH | 4 | 교신저자 | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea | jhbae@ee.knu.ac.kr;hyeok.kim@uos.ac.kr; | ||||
| A Current Development of Energy Harvesting Systems for Energy-Independent Bioimplantable Biosensors | Kim, Hyeok | Kim, H | 5 | 교신저자 | Univ Seoul, Ctr Smart Sensor Syst Seoul CS4, Sch Elect & Comp Engn, 163 Seoulsiripdaero, Seoul 02504, South Korea | 0000-0003-2164-2849 | Kim, Hyeok | jhbae@ee.knu.ac.kr;hyeok.kim@uos.ac.kr; | ||
| A D-Band 13-mW Dual-Mode CMOS LNA for Joint Radar-Communication in 22-nm FD-SOI CMOS | Balasubramanian, Shankkar | Balasubramanian, S | 1 | 교신저자 | Nordic Semicond ASA, IC Dev, N-7052 Trondheim, Norway | shankkar.balasubramanian@ntnu.no; | ||||
| A D-Band 13-mW Dual-Mode CMOS LNA for Joint Radar-Communication in 22-nm FD-SOI CMOS | Balasubramanian, Shankkar | Balasubramanian, S | 1 | 교신저자 | Norwegian Univ Sci & Technol, Dept Elect Syst, N-7034 Trondheim, Norway | shankkar.balasubramanian@ntnu.no; | ||||
| A D-Band 13-mW Dual-Mode CMOS LNA for Joint Radar-Communication in 22-nm FD-SOI CMOS | Vaesen, Kristof | Vaesen, K | 2 | IMEC, B-3001 Leuven, Belgium | shankkar.balasubramanian@ntnu.no; | |||||
| A D-Band 13-mW Dual-Mode CMOS LNA for Joint Radar-Communication in 22-nm FD-SOI CMOS | Kankuppe, Anirudh | Kankuppe, A | 3 | IMEC, B-3001 Leuven, Belgium | ABH-6613-2020 | Kankuppe, Anirudh | 0000-0002-0114-1193 | Kankuppe Raghavendra Swamy, Anirudh Praveen | shankkar.balasubramanian@ntnu.no; | |
| A D-Band 13-mW Dual-Mode CMOS LNA for Joint Radar-Communication in 22-nm FD-SOI CMOS | Park, Sehoon | Park, S | 4 | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea | 0000-0002-9029-596X | Park, Sehoon | shankkar.balasubramanian@ntnu.no; | |||
| A D-Band 13-mW Dual-Mode CMOS LNA for Joint Radar-Communication in 22-nm FD-SOI CMOS | Wulff, Carsten | Wulff, C | 5 | Nordic Semicond ASA, IC Dev, N-7052 Trondheim, Norway | 0000-0002-4979-6658 | Wulff, Carsten | shankkar.balasubramanian@ntnu.no; | |||
| A D-Band 13-mW Dual-Mode CMOS LNA for Joint Radar-Communication in 22-nm FD-SOI CMOS | Wulff, Carsten | Wulff, C | 5 | Norwegian Univ Sci & Technol, Dept Elect Syst, N-7034 Trondheim, Norway | 0000-0002-4979-6658 | Wulff, Carsten | shankkar.balasubramanian@ntnu.no; | |||
| A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology | Hemelhof, Arno | Hemelhof, A | 1 | 교신저자 | Imec, Kapeldreef 75, B-3001 Leuven, Belgium | arno.hemelhof@imec.be; | ||||
| A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology | Hemelhof, Arno | Hemelhof, A | 1 | 교신저자 | Vrije Univ Brussel, Dept Elect & Informat ETRO1, Pleinlaan 2, B-1050 Brussels1, Belgium | arno.hemelhof@imec.be; | ||||
| A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology | Park, Sehoon | Park, S | 2 | Kyungpook Natl Univ, Sch Elect Engn, 80,Daehak Ro, Daegu, South Korea | arno.hemelhof@imec.be; | |||||
| A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology | Zhang, Yang | Zhang, Y | 3 | Imec, Kapeldreef 75, B-3001 Leuven, Belgium | arno.hemelhof@imec.be; | |||||
| A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology | Ingels, Mark | Ingels, M | 4 | Imec, Kapeldreef 75, B-3001 Leuven, Belgium | arno.hemelhof@imec.be; |
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