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2022 연구자 정보 (883 / 1074)

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Author Name 제1저자 여부 ⓘ 교신저자 여부 ⓘ Address ResearcherID ORCID Paper Title WoS Edition 최상위 JCR(%) WoS Category Related Email
Kim, Dae-Hyun
(Kim, DH) ⓘ 		교신저자 Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu, South Korea
Gyeongbuk Livestock Res Inst, Yeongju 36052, Gyeongsangbuk D, South Korea
Gyeongbuk Livestock Res Inst, Yeongju, Gyeongsangbuk D, South Korea
Kyungpook Natl Univ, Sch Elect Engn, 80 Daehak Ro, Daegu 41566, South Korea
Dong A Univ Hosp, Busan Reg Cardiocerebrovasc Dis Ctr, Pusan, South Korea
Dong A Univ Hosp, Busan Ulsan Reg Cardiocerebrovasc Dis Ctr, Busan, South Korea ⓘ 		AAQ-9204-2021
AAA-4463-2020
Kim, Junghwan
Kim, Dae-Hyun ⓘ 		0000-0002-4820-4438
0000-0001-9761-7792
Kim, Daehyun
Kim, DAE HYUN ⓘ 		[JCR상위 58.7] Physics-Based Analytical Channel Charge Model of InxGa1-xAs/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes
On the universality of drain-induced-barrier-lowering in field-effect transistors
3-levels-stacked InxGa1-xAs Multi-Bridge Channel Field-Effect-Transistors
[JCR상위 79.0] Ras-related proteins (Rab) play significant roles in sperm motility and capacitation status
[JCR상위 52.4] Effect of glycerol addition time on the cryopreserved Korean native brindle cattle (Chikso) sperm quality
[JCR상위 72.4] Extraction of effective mobility of In0.8Ga0.2As/In0.52Al0.48As quantum well high-electron-mobility transistors on InP substrate
[JCR상위 24.7] Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity
[JCR상위 28.1] Comparison of Factors Associated With Direct Versus Transferred-in Admission to Government-Designated Regional Centers Between Acute Ischemic Stroke and Myocardial Infarction in Korea
[JCR상위 26.9] Comparisons of Prehospital Delay and Related Factors Between Acute Ischemic Stroke and Acute Myocardial Infarction ⓘ 		SCIE ⓘ 24.7 ENGINEERING, ELECTRICAL & ELECTRONIC
REPRODUCTIVE BIOLOGY
AGRICULTURE, DAIRY & ANIMAL SCIENCE
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER
CHEMISTRY, PHYSICAL;MATERIALS SCIENCE, MULTIDISCIPLINARY;METALLURGY & METALLURGICAL ENGINEERING;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER
MEDICINE, GENERAL & INTERNAL
CARDIAC & CARDIOVASCULAR SYSTEMS ⓘ 		dae-hyun.kim@ee.knu.ac.kr;
wskwon@knu.ac.kr;
hjjggo@korea.kr;wskwon@knu.ac.kr;
dae-hyun.kim@ee.knu.ac.kr;twkim78@ulsan.ac.kr;
braindoc@snu.ac.kr; ⓘ
Kim, Dong-Seok
(Kim, DS) ⓘ 		제1저자 교신저자 Korea Atom Energy Res Inst, Korea Multipurpose Accelerator Complex, Gyeongju 38180, Gyeongsangbuk D, South Korea
Korea Atom Energy Res Inst, KOMAC, Gyeongju 38180, South Korea ⓘ
ⓘ
ⓘ 		Effect of Proton Irradiation Energy on AlGaN/GaN HEMTs fabricated by Ion-implanted Isolation
[JCR상위 58.7] Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs ⓘ 		SCIE ⓘ 58.7 ENGINEERING, ELECTRICAL & ELECTRONIC ⓘ dongseokkim@kaeri.re.kr;
jlee@ee.knu.ac.kr; ⓘ
Kim, Eunjin
(Kim, E) ⓘ 		Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 701702, South Korea ⓘ
ⓘ 		0000-0002-4018-345X
kim, eunjin ⓘ 		[JCR상위 58.7] Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs ⓘ SCIE ⓘ 58.7 ENGINEERING, ELECTRICAL & ELECTRONIC ⓘ jlee@ee.knu.ac.kr; ⓘ
Kim, Jeong-Gil
(Kim, JG) ⓘ 		Kyungpook Natl Univ, Sch Elect Engn, Coll IT Engn, Daegu 41566, South Korea
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 701702, South Korea ⓘ
ⓘ
ⓘ 		Effect of Proton Irradiation Energy on AlGaN/GaN HEMTs fabricated by Ion-implanted Isolation
[JCR상위 58.7] Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs ⓘ 		SCIE ⓘ 58.7 ENGINEERING, ELECTRICAL & ELECTRONIC ⓘ dongseokkim@kaeri.re.kr;
jlee@ee.knu.ac.kr; ⓘ
Kim, Ki-Beom
(Kim, KB) ⓘ 		제1저자 Kyungpook Natl Univ, Dept Astron & Atmospher Sci, Daegu 41566, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 58.7] Relations between global seismic parameters and activity cycles of the Sun ⓘ SCIE ⓘ 58.7 ASTRONOMY & ASTROPHYSICS ⓘ hyc@knu.ac.kr; ⓘ
Kim, Tae-Woo
(Kim, TW) ⓘ 		Univ Ulsan, Elect Engn Dept, Ulsan 41610, South Korea
Univ Ulsan, Sch Elect Engn, Ulsan, South Korea
Univ Ulsan, Dept Elect Elect & Comp Engn, Ulsan 44610, South Korea ⓘ
ⓘ 		0000-0003-0234-5080
Kim, Tae-Woo ⓘ 		[JCR상위 58.7] Physics-Based Analytical Channel Charge Model of InxGa1-xAs/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes
[JCR상위 72.4] Extraction of effective mobility of In0.8Ga0.2As/In0.52Al0.48As quantum well high-electron-mobility transistors on InP substrate
[JCR상위 24.7] Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity ⓘ 		SCIE ⓘ 24.7 ENGINEERING, ELECTRICAL & ELECTRONIC
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER
CHEMISTRY, PHYSICAL;MATERIALS SCIENCE, MULTIDISCIPLINARY;METALLURGY & METALLURGICAL ENGINEERING;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER ⓘ 		dae-hyun.kim@ee.knu.ac.kr;
dae-hyun.kim@ee.knu.ac.kr;twkim78@ulsan.ac.kr; ⓘ
Lee, Hyun-Kyu
(Lee, HK) ⓘ 		제1저자 Kyungpook Natl Univ, Res Inst Adv Energy Technol, 80 Daehak Ro, Daegu 41566, South Korea ⓘ
ⓘ 		0000-0001-6802-7857
Lee, Hyun-Kyu ⓘ 		[JCR상위 58.7] Copper ferrocyanide chemically immobilized onto a polyvinylidene fluoride hollow-fibre membrane surface for the removal of aqueous cesium ⓘ SCIE ⓘ 58.7 ENVIRONMENTAL SCIENCES ⓘ sjchoi@knu.ac.kr; ⓘ
Lee, In-Geun
(Lee, IG) ⓘ 		Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu, South Korea ⓘ
ⓘ 		0000-0002-5629-4760
Lee, In-Geun ⓘ 		[JCR상위 58.7] Physics-Based Analytical Channel Charge Model of InxGa1-xAs/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes
On the universality of drain-induced-barrier-lowering in field-effect transistors
3-levels-stacked InxGa1-xAs Multi-Bridge Channel Field-Effect-Transistors ⓘ 		SCIE ⓘ 58.7 ENGINEERING, ELECTRICAL & ELECTRONIC ⓘ dae-hyun.kim@ee.knu.ac.kr; ⓘ
Lee, Jae-Hak
(Lee, JH) ⓘ 		Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 58.7] Physics-Based Analytical Channel Charge Model of InxGa1-xAs/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes
On the universality of drain-induced-barrier-lowering in field-effect transistors
3-levels-stacked InxGa1-xAs Multi-Bridge Channel Field-Effect-Transistors ⓘ 		SCIE ⓘ 58.7 ENGINEERING, ELECTRICAL & ELECTRONIC ⓘ dae-hyun.kim@ee.knu.ac.kr; ⓘ
Lee, Jung-Hee
(Lee, JH) ⓘ 		Kyungpook Natl Univ, Sch Elect Engn, Coll IT Engn, Daegu 41566, South Korea
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 701702, South Korea
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea ⓘ 		JFT-0292-2023
Lee, Jong Hui ⓘ
ⓘ 		Effect of Proton Irradiation Energy on AlGaN/GaN HEMTs fabricated by Ion-implanted Isolation
[JCR상위 58.7] Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs
[JCR상위 5.1] Temperature dependence of the piezotronic and piezophototronic effects in flexible GaN thin films ⓘ 		SCIE ⓘ 5.1 ENGINEERING, ELECTRICAL & ELECTRONIC
CHEMISTRY, PHYSICAL;MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED ⓘ 		dongseokkim@kaeri.re.kr;
jlee@ee.knu.ac.kr;
jshim@ynu.ac.kr;jlee@ee.knu.ac.kr; ⓘ
Matsuzaki, Hideaki
(Matsuzaki, H) ⓘ 		NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan
NTT Corp, NTT Device Technol Labs, Yokohama, Kanagawa, Japan
NTT Corp, NTT Device Technol Labs, Tokyo, Japan
NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan ⓘ
ⓘ 		0000-0002-7027-8919
Matsuzaki, Hideaki ⓘ 		[JCR상위 58.7] Physics-Based Analytical Channel Charge Model of InxGa1-xAs/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes
On the universality of drain-induced-barrier-lowering in field-effect transistors
[JCR상위 72.4] Extraction of effective mobility of In0.8Ga0.2As/In0.52Al0.48As quantum well high-electron-mobility transistors on InP substrate
[JCR상위 24.7] Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity ⓘ 		SCIE ⓘ 24.7 ENGINEERING, ELECTRICAL & ELECTRONIC
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER
CHEMISTRY, PHYSICAL;MATERIALS SCIENCE, MULTIDISCIPLINARY;METALLURGY & METALLURGICAL ENGINEERING;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER ⓘ 		dae-hyun.kim@ee.knu.ac.kr;
dae-hyun.kim@ee.knu.ac.kr;twkim78@ulsan.ac.kr; ⓘ
Park, Ju Seong
(Park, JS) ⓘ 		제1저자 교신저자 Hanwha Syst, Yongin, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 58.7] Design of 24-40 GHz Ultra-Wideband Circularly Polarized Monopole Antenna with a Defected Ground Plane ⓘ SCIE ⓘ 58.7 ENGINEERING, ELECTRICAL & ELECTRONIC ⓘ acckidi@naver.com;kkmc@knu.ac.kr; ⓘ
Park, Wan-Soo
(Park, WS) ⓘ 		Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu, South Korea ⓘ
ⓘ 		0000-0001-7775-6680
Park, Wan-Soo ⓘ 		[JCR상위 58.7] Physics-Based Analytical Channel Charge Model of InxGa1-xAs/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes
On the universality of drain-induced-barrier-lowering in field-effect transistors
[JCR상위 72.4] Extraction of effective mobility of In0.8Ga0.2As/In0.52Al0.48As quantum well high-electron-mobility transistors on InP substrate ⓘ 		SCIE ⓘ 58.7 ENGINEERING, ELECTRICAL & ELECTRONIC
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER ⓘ 		dae-hyun.kim@ee.knu.ac.kr; ⓘ
Sugiyama, Hiroki
(Sugiyama, H) ⓘ 		NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan
NTT Corp, NTT Device Technol Labs, Yokohama, Kanagawa, Japan
NTT Corp, NTT Device Technol Labs, Tokyo, Japan
NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan ⓘ 		P-6476-2019
Sugiyama, Hiroki ⓘ 		0000-0002-6301-857X
Sugiyama, Hiroki ⓘ 		[JCR상위 58.7] Physics-Based Analytical Channel Charge Model of InxGa1-xAs/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes
On the universality of drain-induced-barrier-lowering in field-effect transistors
[JCR상위 72.4] Extraction of effective mobility of In0.8Ga0.2As/In0.52Al0.48As quantum well high-electron-mobility transistors on InP substrate
[JCR상위 24.7] Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity ⓘ 		SCIE ⓘ 24.7 ENGINEERING, ELECTRICAL & ELECTRONIC
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER
CHEMISTRY, PHYSICAL;MATERIALS SCIENCE, MULTIDISCIPLINARY;METALLURGY & METALLURGICAL ENGINEERING;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER ⓘ 		dae-hyun.kim@ee.knu.ac.kr;
dae-hyun.kim@ee.knu.ac.kr;twkim78@ulsan.ac.kr; ⓘ
Tsutsumi, Takuya
(Tsutsumi, T) ⓘ 		NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan
NTT Corp, NTT Device Technol Labs, Yokohama, Kanagawa, Japan
NTT Corp, NTT Device Technol Labs, Tokyo, Japan
NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan ⓘ
ⓘ
ⓘ 		[JCR상위 58.7] Physics-Based Analytical Channel Charge Model of InxGa1-xAs/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes
On the universality of drain-induced-barrier-lowering in field-effect transistors
[JCR상위 72.4] Extraction of effective mobility of In0.8Ga0.2As/In0.52Al0.48As quantum well high-electron-mobility transistors on InP substrate
[JCR상위 24.7] Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity ⓘ 		SCIE ⓘ 24.7 ENGINEERING, ELECTRICAL & ELECTRONIC
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER
CHEMISTRY, PHYSICAL;MATERIALS SCIENCE, MULTIDISCIPLINARY;METALLURGY & METALLURGICAL ENGINEERING;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER ⓘ 		dae-hyun.kim@ee.knu.ac.kr;
dae-hyun.kim@ee.knu.ac.kr;twkim78@ulsan.ac.kr; ⓘ
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