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2023 연구자 정보 (871 / 1135)

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Author Name 제1저자 여부 ⓘ 교신저자 여부 ⓘ Address ResearcherID ORCID Paper Title WoS Edition 최상위 JCR(%) WoS Category Related Email
Sung, Jae-Yoon
(Sung, JY) ⓘ 		Yonsei Univ, Dept Biotechnol, Seoul, South Korea ⓘ
ⓘ 		0000-0002-2475-8743
Sung, Jae-Yoon ⓘ 		[JCR상위 37.6] A Retro-Aldol Reaction Prompted the Evolvability of a Phosphotransferase System for the Utilization of a Rare Sugar ⓘ SCIE ⓘ 37.6 MICROBIOLOGY ⓘ leehicam@yonsei.ac.kr; ⓘ
Amir, Walid
(Amir, W) ⓘ 		제1저자 Univ Ulsan, Dept Elect Elect & Comp Engn, Ulsan 44610, South Korea
Univ Ulsan, Dept Elect Elect & Comp Engn, Ulsan, South Korea ⓘ
ⓘ 		0000-0002-2060-7104
Amir, Walid ⓘ 		[JCR상위 37.7] Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment
[JCR상위 73.5] Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression ⓘ 		SCIE ⓘ 37.7 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER ⓘ 		dae-hyun.kim@ee.knu.ac.kr;twkim78@ulsan.ac.kr; ⓘ
Baek, Ji-Min
(Baek, JM) ⓘ 		Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 37.7] Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications ⓘ SCIE ⓘ 37.7 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED ⓘ dae-hyun.kim@ee.knu.ac.kr; ⓘ
Cha, Eunjung
(Cha, E) ⓘ 		제1저자 Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
IBM Res Zurich, CH-8803 Ruschlikon, Switzerland ⓘ 		AAL-6036-2020
Cha, Eunjung ⓘ 		0000-0001-5818-3274
Cha, Eunjung ⓘ 		[JCR상위 37.7] Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation ⓘ SCIE ⓘ 37.7 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED ⓘ cha@zurich.ibm.com;wadefalk@lownoisefactory.com;dae-hyun.kim@ee.knu.ac.kr;jan.grahn@chalmers.se; ⓘ
Chakraborty, Surajit
(Chakraborty, S) ⓘ 		Univ Ulsan, Dept Elect Elect & Comp Engn, Ulsan 44610, South Korea
Univ Ulsan, Dept Elect Elect & Comp Engn, Ulsan, South Korea ⓘ 		IXD-2458-2023
Chakraborty, Surajit ⓘ 		0000-0002-2566-0027
Chakraborty, Surajit ⓘ 		[JCR상위 37.7] Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment
[JCR상위 73.5] Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression ⓘ 		SCIE ⓘ 37.7 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER ⓘ 		dae-hyun.kim@ee.knu.ac.kr;twkim78@ulsan.ac.kr; ⓘ
Cho, Chu-Young
(Cho, CY) ⓘ 		Korea Adv Nano Fab Ctr, Suwon 16229, Gyeonggi Do, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 37.7] Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment ⓘ SCIE ⓘ 37.7 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED ⓘ dae-hyun.kim@ee.knu.ac.kr;twkim78@ulsan.ac.kr; ⓘ
Choi, Ji-Won
(Choi, JW) ⓘ 		ILSUNG Plating Co Ltd, R&D Ctr, Daegu 42697, South Korea ⓘ
ⓘ 		0000-0001-8825-5005
Choi, Ji-Won ⓘ 		[JCR상위 37.7] Effects of Organic Additives on Alkaline Non-Cyanide Zinc Electroplating
[JCR상위 24.0] Concentration Influence of Complexing Agent on Electrodeposited Zn-Ni Alloy ⓘ 		SCIE ⓘ 24.0 MATERIALS SCIENCE, COATINGS & FILMS;MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED
CHEMISTRY, MULTIDISCIPLINARY;ENGINEERING, MULTIDISCIPLINARY;MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED ⓘ 		milk3275@naver.com;lsung70@ilsung70.com;rhrwl6@naver.com;ijson@knu.ac.kr;
ilsung70@ilsung70.com;rhrwl6@naver.com;milk3275@naver.com;ijson@knu.ac.kr; ⓘ
Choi, Su-Min
(Choi, SM) ⓘ 		Kyungpook Natl Univ, Daegu, South Korea
Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea ⓘ
ⓘ
ⓘ 		A W-Band Low-Noise Amplifier in 50-nm InP HEMT Technology
[JCR상위 37.7] Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications ⓘ 		SCIE ⓘ 37.7 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED ⓘ wchoi@okstate.edu;
dae-hyun.kim@ee.knu.ac.kr; ⓘ
George, Sethu
(George, S) ⓘ 		Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea ⓘ JVO-6743-2024
George, Sethu Merin ⓘ
ⓘ 		[JCR상위 37.7] Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications ⓘ SCIE ⓘ 37.7 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED ⓘ dae-hyun.kim@ee.knu.ac.kr; ⓘ
Grahn, Jan
(Grahn, J) ⓘ 		교신저자 Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden ⓘ
ⓘ 		0000-0002-5439-870X
Grahn, Jan ⓘ 		[JCR상위 37.7] Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation ⓘ SCIE ⓘ 37.7 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED ⓘ cha@zurich.ibm.com;wadefalk@lownoisefactory.com;dae-hyun.kim@ee.knu.ac.kr;jan.grahn@chalmers.se; ⓘ
Hoshi, Takuya
(Hoshi, T) ⓘ 		NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan
NTT Corp, NTT Device Technol Labs, Kanagawa 2430198, Japan ⓘ 		JRZ-1293-2023
Hoshi, Takuya ⓘ 		0009-0007-5643-1423
Hoshi, Takuya ⓘ 		[JCR상위 37.7] Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment
[JCR상위 73.5] Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression ⓘ 		SCIE ⓘ 37.7 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER ⓘ 		dae-hyun.kim@ee.knu.ac.kr;twkim78@ulsan.ac.kr; ⓘ
Jang, Jun Tae
(Jang, JT) ⓘ 		Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea ⓘ
ⓘ 		0000-0003-3891-2112
Jang, Jun Tae ⓘ 		[JCR상위 37.7] Read Disturbance in Cross-Point Phase-Change Memory Arrays-Part II: Array Simulations Considering External Currents
[JCR상위 32.7] Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states
[JCR상위 37.7] Read Disturbances in Cross-Point Phase-Change Memory Arrays- Part I: Physical Modeling With Phase-Change Dynamics ⓘ 		SCIE ⓘ 32.7 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED
PHYSICS, APPLIED ⓘ 		jiyong.woo@knu.ac.kr;drlife@kookmin.ac.kr;
jiyong.woo@knu.ac.kr;drlift@kookmin.ac.kr; ⓘ
Jeon, Su-Byung
(Jeon, SB) ⓘ 		제1저자 Kyungpook Natl Univ, Dept Mat Sci & Met Engn, Daegu 41566, South Korea
ILSUNG Plating Co Ltd, R&D Ctr, Daegu 42697, South Korea ⓘ
ⓘ 		0000-0003-4865-2406
Jeon, Su Byung ⓘ 		[JCR상위 37.7] Effects of Organic Additives on Alkaline Non-Cyanide Zinc Electroplating
[JCR상위 24.0] Concentration Influence of Complexing Agent on Electrodeposited Zn-Ni Alloy ⓘ 		SCIE ⓘ 24.0 MATERIALS SCIENCE, COATINGS & FILMS;MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED
CHEMISTRY, MULTIDISCIPLINARY;ENGINEERING, MULTIDISCIPLINARY;MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED ⓘ 		milk3275@naver.com;lsung70@ilsung70.com;rhrwl6@naver.com;ijson@knu.ac.kr;
ilsung70@ilsung70.com;rhrwl6@naver.com;milk3275@naver.com;ijson@knu.ac.kr; ⓘ
Jeong, Hyeon-Seok
(Jeong, HS) ⓘ 		Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 37.7] Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications ⓘ SCIE ⓘ 37.7 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED ⓘ dae-hyun.kim@ee.knu.ac.kr; ⓘ
Kang, Seung-Youl
(Kang, SY) ⓘ 		Elect & Telecommun Res Inst, Daejeon 34129, South Korea ⓘ JDD-8544-2023
Kang, Seung-Youl ⓘ
ⓘ 		[JCR상위 37.7] Experimental Robust Spontaneous Synchronizations in Coupled NbOx Oscillation Neurons for Unconventional Computing ⓘ SCIE ⓘ 37.7 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED ⓘ jiyong.woo@knu.ac.kr; ⓘ
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