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2022 연구자 정보 (860 / 1074)

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Author Name 제1저자 여부 교신저자 여부 Address ResearcherID ORCID Paper Title WoS Edition 최상위 JCR(%) WoS Category Related Email
Kang, Ga Eon
(Kang, GE)
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea

[JCR상위 54.7] Simulation of CMOS logic inverter based on vertically stacked polycrystalline silicon nanosheet gate-all-around MOSFET and its electrical characteristics
Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon
SCIE 54.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED imkang@ee.knu.ac.kr;
Kim, Geon Uk
(Kim, GU)
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 702201, South Korea


[JCR상위 54.7] Simulation of CMOS logic inverter based on vertically stacked polycrystalline silicon nanosheet gate-all-around MOSFET and its electrical characteristics
Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon
[JCR상위 29.5] 3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence
[JCR상위 70.0] Analysis and Optimization for Characteristics of Vertical GaN Junctionless MOSFETs Depending on Specifications of GaN Substrates
[JCR상위 24.1] Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure
[JCR상위 98.4] Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si3N4/TiO2 Stacked Dual Gate Dielectric
SCIE 24.1 MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED
MULTIDISCIPLINARY SCIENCES
ENGINEERING, ELECTRICAL & ELECTRONIC
CHEMISTRY, MULTIDISCIPLINARY;MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED
imkang@ee.knu.ac.kr;
gmleo3396@naver.com;imkang@ee.knu.ac.kr;
Kim, Heetae
(Kim, H)
교신저자 Inst for Basic Sci Korea, Rare Isotope Sci Project, Daejeon 34000, South Korea

[JCR상위 54.7] Field emission and x-ray effect on RAON half-wave resonator (HWR) superconducting cavity performance SCIE 54.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED kimht7@ibs.re.kr;
Kim, Hyunik
(Kim, H)
교신저자 Inst for Basic Sci Korea, Rare Isotope Sci Project, Daejeon 34000, South Korea

[JCR상위 54.7] Field emission and x-ray effect on RAON half-wave resonator (HWR) superconducting cavity performance SCIE 54.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED kimht7@ibs.re.kr;
Kim, Juwan
(Kim, J)
Inst for Basic Sci Korea, Rare Isotope Sci Project, Daejeon 34000, South Korea

[JCR상위 54.7] Field emission and x-ray effect on RAON half-wave resonator (HWR) superconducting cavity performance SCIE 54.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED kimht7@ibs.re.kr;
Kim, Moosang
(Kim, M)
Inst for Basic Sci Korea, Rare Isotope Sci Project, Daejeon 34000, South Korea

[JCR상위 54.7] Field emission and x-ray effect on RAON half-wave resonator (HWR) superconducting cavity performance SCIE 54.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED kimht7@ibs.re.kr;
Lee, Junwoo
(Lee, J)
Inst for Basic Sci Korea, Rare Isotope Sci Project, Daejeon 34000, South Korea
Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea


[JCR상위 54.7] Field emission and x-ray effect on RAON half-wave resonator (HWR) superconducting cavity performance
[JCR상위 9.3] Tailoring the Time-Averaged Structure for Polarization-Sensitive Chiral Perovskites
SCIE 9.3 MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED
CHEMISTRY, MULTIDISCIPLINARY
kimht7@ibs.re.kr;
jsparkphys@knu.ac.kr;jmoon@yonsei.ac.kr;
Lee, Minki
(Lee, M)
Inst for Basic Sci Korea, Rare Isotope Sci Project, Daejeon 34000, South Korea

[JCR상위 54.7] Field emission and x-ray effect on RAON half-wave resonator (HWR) superconducting cavity performance SCIE 54.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED kimht7@ibs.re.kr;
Lee, Sang Ho
(Lee, SH)
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 702201, South Korea
Kyung Hee Univ, Dept Internal Med, Coll Med, Seoul, South Korea
Kyung Hee Univ, Dept Internal Med, Seoul, South Korea
MCX-8396-2025
Lee, Sang Ho
0000-0002-4954-3861
Lee, Sang Ho
[JCR상위 54.7] Simulation of CMOS logic inverter based on vertically stacked polycrystalline silicon nanosheet gate-all-around MOSFET and its electrical characteristics
Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon
[JCR상위 29.5] 3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence
[JCR상위 70.0] Analysis and Optimization for Characteristics of Vertical GaN Junctionless MOSFETs Depending on Specifications of GaN Substrates
[JCR상위 24.1] Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure
[JCR상위 98.4] Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si3N4/TiO2 Stacked Dual Gate Dielectric
[JCR상위 36.9] A multicenter, randomized, open-label, comparative, phase IV study to evaluate the efficacy and safety of combined treatment with mycophenolate mofetil and corticosteroids in advanced immunoglobulin A nephropathy
[JCR상위 68.0] Safety and metabolic advantages of steroid withdrawal after 6 months posttransplant in de novo kidney transplantation: A 1-year prospective cohort study
SCIE 24.1 MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED
MULTIDISCIPLINARY SCIENCES
ENGINEERING, ELECTRICAL & ELECTRONIC
CHEMISTRY, MULTIDISCIPLINARY;MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED
UROLOGY & NEPHROLOGY
IMMUNOLOGY
imkang@ee.knu.ac.kr;
gmleo3396@naver.com;imkang@ee.knu.ac.kr;
sooncb@catholic.ac.kr;docbsk@yuhs.ac;
dltngudgs@aumc.ac.kr;twinstwins@hanmail.net;
Lee, Sangbeen
(Lee, S)
Inst for Basic Sci Korea, Rare Isotope Sci Project, Daejeon 34000, South Korea

[JCR상위 54.7] Field emission and x-ray effect on RAON half-wave resonator (HWR) superconducting cavity performance SCIE 54.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED kimht7@ibs.re.kr;
Min, So Ra
(Min, SR)
제1저자 Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 702201, South Korea


[JCR상위 54.7] Simulation of CMOS logic inverter based on vertically stacked polycrystalline silicon nanosheet gate-all-around MOSFET and its electrical characteristics
[JCR상위 29.5] 3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence
[JCR상위 70.0] Analysis and Optimization for Characteristics of Vertical GaN Junctionless MOSFETs Depending on Specifications of GaN Substrates
[JCR상위 24.1] Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure
[JCR상위 98.4] Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si3N4/TiO2 Stacked Dual Gate Dielectric
SCIE 24.1 MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED
MULTIDISCIPLINARY SCIENCES
ENGINEERING, ELECTRICAL & ELECTRONIC
CHEMISTRY, MULTIDISCIPLINARY;MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED
imkang@ee.knu.ac.kr;
gmleo3396@naver.com;imkang@ee.knu.ac.kr;
Park, Jin
(Park, J)
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 702201, South Korea
Jeonbuk Natl Univ, Dept Dermatol, Med Sch, Jeonju, South Korea


[JCR상위 54.7] Simulation of CMOS logic inverter based on vertically stacked polycrystalline silicon nanosheet gate-all-around MOSFET and its electrical characteristics
[JCR상위 24.7] Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator
Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon
[JCR상위 29.5] 3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence
[JCR상위 70.0] Analysis and Optimization for Characteristics of Vertical GaN Junctionless MOSFETs Depending on Specifications of GaN Substrates
[JCR상위 24.1] Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure
[JCR상위 98.4] Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si3N4/TiO2 Stacked Dual Gate Dielectric
[JCR상위 41.1] A Phase 3, Randomized, Multi-center Clinical Trial to Evaluate the Efficacy and Safety of Neu-BoNT/A in Treatment of Primary Axillary Hyperhidrosis
[JCR상위 77.9] Impact of Pediatric Alopecia Areata on Quality of Life of Patients and Their Family Members: A Nationwide Multicenter Questionnaire Study
SCIE 24.1 MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED
CHEMISTRY, PHYSICAL;MATERIALS SCIENCE, MULTIDISCIPLINARY;METALLURGY & METALLURGICAL ENGINEERING;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER
MULTIDISCIPLINARY SCIENCES
ENGINEERING, ELECTRICAL & ELECTRONIC
CHEMISTRY, MULTIDISCIPLINARY;MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED
SURGERY
DERMATOLOGY
imkang@ee.knu.ac.kr;
minsora0716@gmail.com;chominsu14@knu.ac.kr;jim782jim@naver.com;jdefs12@naver.com;gmleo3396@naver.com;kku563@naver.com;yjyoon@kaeri.re.kr;seojeahwa@naver.com;j1jang@knu.ac.kr;jhbae@ee.knu.ac.kr;sinhlee@knu.ac.kr;imkang@ee.knu.ac.kr;
gmleo3396@naver.com;imkang@ee.knu.ac.kr;
johnkang@catholic.ac.kr;
garden@inha.ac.kr;
Park, Seyeon
(Park, S)
Kyungpook Natl Univ, Dept Phys, Daegu 41566, South Korea

[JCR상위 54.7] Cost-effective calculation of defects in Si using hybrid density functional with downsampled reciprocal grids SCIE 54.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED jsparkphys@knu.ac.kr;
Pratap, Ajay
(Pratap, A)
Ajou Univ, Dept Energy Syst Res, Suwon 16499, South Korea

[JCR상위 54.7] Brush drawing multifunctional electronic textiles for human-machine interfaces SCIE 54.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED sunghwankim@ajou.ac.kr;
Seo, Jae Hwa
(Seo, JH)
Korea Electrotechnol Res Inst, Power Semicond Res Ctr, Chang Won 51543, South Korea
Power Semicond Res Ctr, Korea Electrotechnol Res Inst, Chang Won 51543, South Korea
KYP-7367-2024
Seo, Jae Hwa
0000-0001-9370-299X
Seo, Jae Hwa
[JCR상위 54.7] Simulation of CMOS logic inverter based on vertically stacked polycrystalline silicon nanosheet gate-all-around MOSFET and its electrical characteristics
Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon
[JCR상위 70.0] Analysis and Optimization for Characteristics of Vertical GaN Junctionless MOSFETs Depending on Specifications of GaN Substrates
[JCR상위 24.1] Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure
[JCR상위 98.4] Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si3N4/TiO2 Stacked Dual Gate Dielectric
SCIE 24.1 MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED
ENGINEERING, ELECTRICAL & ELECTRONIC
CHEMISTRY, MULTIDISCIPLINARY;MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED
imkang@ee.knu.ac.kr;
gmleo3396@naver.com;imkang@ee.knu.ac.kr;
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