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2024 연구자 정보 (822 / 1079)
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| Author Name | 제1저자 여부 | 교신저자 여부 | Address | ResearcherID | ORCID | Paper Title | WoS Edition | 최상위 JCR(%) | WoS Category | Related Email |
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Brotons-Rufes, Artur (Brotons-Rufes, A) |
Univ Girona, Inst Quim Computac & Catalisi, C Maria Aurelia Capmany 69, Girona 17003, Catalonia, Spain Univ Girona, Dept Quim, C Maria Aurelia Capmany 69, Girona 17003, Catalonia, Spain |
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[JCR상위 37.7] Amino acid ionic liquids as efficient catalysts for CO2 capture: A combined static and dynamic approach | ESCI | 37.7 | MATERIALS SCIENCE, MULTIDISCIPLINARY | ab_rajjak@yahoo.co.in;albert.poater@udg.edu;mohit.chawla@kaust.edu.sa;luigi.cavallo@kaust.edu.sa; | ||
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Cavallo, Luigi (Cavallo, L) |
교신저자 | King Abdullah Univ Sci & Technol KAUST, KAUST Catalysis Ctr, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia |
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[JCR상위 37.7] Amino acid ionic liquids as efficient catalysts for CO2 capture: A combined static and dynamic approach | ESCI | 37.7 | MATERIALS SCIENCE, MULTIDISCIPLINARY | ab_rajjak@yahoo.co.in;albert.poater@udg.edu;mohit.chawla@kaust.edu.sa;luigi.cavallo@kaust.edu.sa; | |
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Chawla, Mohit (Chawla, M) |
교신저자 | King Abdullah Univ Sci & Technol KAUST, KAUST Catalysis Ctr, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia |
R-1766-2019 Chawla, Mohit |
0000-0002-3332-3055 chawla, mohit |
[JCR상위 37.7] Amino acid ionic liquids as efficient catalysts for CO2 capture: A combined static and dynamic approach | ESCI | 37.7 | MATERIALS SCIENCE, MULTIDISCIPLINARY | ab_rajjak@yahoo.co.in;albert.poater@udg.edu;mohit.chawla@kaust.edu.sa;luigi.cavallo@kaust.edu.sa; | |
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Choi, Hyeonsik (Choi, H) |
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu, South Korea Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea |
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0009-0004-9676-9355 Choi, Hyeonsik |
[JCR상위 37.7] Linear Synaptic Weight Update in Selector-Less HfO2 RRAM Using Al2O3 Built-In Resistor for Neuromorphic Computing Systems [JCR상위 35.6] Effect of the number and distribution of Al2O3 atomic layer deposition cycles within HfO2 layer on ferroelectric characteristics Highly Contro lable Probabilistic Bits Leveraging Instability of SiOx-Based Threshold Switching Devices for Probabilistic Computing Engineering Strategies in HfOx RRAM-Based Analog Synapses Toward Linear Weight Update for Neuromorphic Hardware Accelerators [JCR상위 37.7] Dual Ferroelectric Stack of HfZrO2 /Al:HfO2 With Tunable Coercive Voltage for High-Density Memory Applications [JCR상위 37.7] Demonstration of Threshold Switching in Undoped SiOX Layer for Oscillation Neurons [JCR상위 16.7] Hf0.4Zr0.6O2 Thickness-Dependent Transfer Characteristics of In x Zn1-x O y Channel Ferroelectric FETs [JCR상위 77.8] Role of oxide barrier in a NbOx layer with noninert electrodes for high-yield threshold switching characteristics [JCR상위 26.6] Back-End-of-Line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments |
SCIE | 16.7 |
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED PHYSICS, APPLIED CHEMISTRY, PHYSICAL;MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, ATOMIC, MOLECULAR & CHEMICAL MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED ENGINEERING, ELECTRICAL & ELECTRONIC |
jiyong.woo@knu.ac.kr; | ||
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Hong, Eunryeong (Hong, E) |
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea |
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0000-0003-3194-9481 Hong, Eunryeong |
[JCR상위 37.7] Linear Synaptic Weight Update in Selector-Less HfO2 RRAM Using Al2O3 Built-In Resistor for Neuromorphic Computing Systems [JCR상위 35.6] Effect of the number and distribution of Al2O3 atomic layer deposition cycles within HfO2 layer on ferroelectric characteristics Highly Contro lable Probabilistic Bits Leveraging Instability of SiOx-Based Threshold Switching Devices for Probabilistic Computing [JCR상위 37.7] Dual Ferroelectric Stack of HfZrO2 /Al:HfO2 With Tunable Coercive Voltage for High-Density Memory Applications [JCR상위 37.7] Demonstration of Threshold Switching in Undoped SiOX Layer for Oscillation Neurons [JCR상위 77.8] Role of oxide barrier in a NbOx layer with noninert electrodes for high-yield threshold switching characteristics [JCR상위 26.6] Back-End-of-Line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments [JCR상위 18.1] Strategy to improve synaptic behavior of ion-actuated synaptic transistors-the use of ion blocking layer to improve state retention |
SCIE | 18.1 |
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED PHYSICS, APPLIED MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED ENGINEERING, ELECTRICAL & ELECTRONIC MULTIDISCIPLINARY SCIENCES |
jiyong.woo@knu.ac.kr; | ||
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Hwang, Hyunsang (Hwang, H) |
교신저자 | Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Dept Mat Sci & Engn, Pohang 790784, South Korea |
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[JCR상위 37.7] Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device | SCIE | 37.7 | ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | jangsub@postech.ac.kr;hwanghs@postech.ac.kr; | |
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Jeon, Seonuk (Jeon, S) |
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea |
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0000-0003-4129-4853 Jeon, Seonuk |
[JCR상위 37.7] Linear Synaptic Weight Update in Selector-Less HfO2 RRAM Using Al2O3 Built-In Resistor for Neuromorphic Computing Systems [JCR상위 8.8] Electrochemical random-access memory: recent advances in materials, devices, and systems towards neuromorphic computing [JCR상위 35.6] Effect of the number and distribution of Al2O3 atomic layer deposition cycles within HfO2 layer on ferroelectric characteristics Highly Contro lable Probabilistic Bits Leveraging Instability of SiOx-Based Threshold Switching Devices for Probabilistic Computing [JCR상위 37.7] Dual Ferroelectric Stack of HfZrO2 /Al:HfO2 With Tunable Coercive Voltage for High-Density Memory Applications [JCR상위 37.7] Demonstration of Threshold Switching in Undoped SiOX Layer for Oscillation Neurons [JCR상위 16.7] Hf0.4Zr0.6O2 Thickness-Dependent Transfer Characteristics of In x Zn1-x O y Channel Ferroelectric FETs [JCR상위 77.8] Role of oxide barrier in a NbOx layer with noninert electrodes for high-yield threshold switching characteristics [JCR상위 26.6] Back-End-of-Line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments [JCR상위 18.1] Strategy to improve synaptic behavior of ion-actuated synaptic transistors-the use of ion blocking layer to improve state retention |
SCIE | 8.8 |
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED PHYSICS, APPLIED CHEMISTRY, PHYSICAL;MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, ATOMIC, MOLECULAR & CHEMICAL ENGINEERING, ELECTRICAL & ELECTRONIC MULTIDISCIPLINARY SCIENCES |
jiyong.woo@knu.ac.kr; kimseyoung@postech.ac.kr;jiyong.woo@knu.ac.kr; |
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Jeong, Jiae (Jeong, J) |
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu, South Korea |
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[JCR상위 37.7] Linear Synaptic Weight Update in Selector-Less HfO2 RRAM Using Al2O3 Built-In Resistor for Neuromorphic Computing Systems [JCR상위 35.6] Effect of the number and distribution of Al2O3 atomic layer deposition cycles within HfO2 layer on ferroelectric characteristics Highly Contro lable Probabilistic Bits Leveraging Instability of SiOx-Based Threshold Switching Devices for Probabilistic Computing [JCR상위 37.7] Dual Ferroelectric Stack of HfZrO2 /Al:HfO2 With Tunable Coercive Voltage for High-Density Memory Applications [JCR상위 16.7] Hf0.4Zr0.6O2 Thickness-Dependent Transfer Characteristics of In x Zn1-x O y Channel Ferroelectric FETs [JCR상위 26.6] Back-End-of-Line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments Controllable Polarization Switching of Hafnia-Based Ferroelectric Bilayers |
SCIE | 16.7 |
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED PHYSICS, APPLIED CHEMISTRY, PHYSICAL;MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, ATOMIC, MOLECULAR & CHEMICAL ENGINEERING, ELECTRICAL & ELECTRONIC |
jiyong.woo@knu.ac.kr; | ||
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Khan, Muhammad Usman (Khan, MU) |
STEMskills Res & Educ Lab Pvt Ltd, Dept Res & Innovat, Faridabad 121002, Haryana, India Univ Okara, Dept Chem, Okara 56300, Pakistan |
ADL-4196-2022 Khan, Muhammad Usman Faryad |
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[JCR상위 37.7] Amino acid ionic liquids as efficient catalysts for CO2 capture: A combined static and dynamic approach | ESCI | 37.7 | MATERIALS SCIENCE, MULTIDISCIPLINARY | ab_rajjak@yahoo.co.in;albert.poater@udg.edu;mohit.chawla@kaust.edu.sa;luigi.cavallo@kaust.edu.sa; | ||
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Kim, Dong Gwan (Kim, DG) |
Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 702701, South Korea |
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[JCR상위 37.7] Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device | SCIE | 37.7 | ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | jangsub@postech.ac.kr;hwanghs@postech.ac.kr; | ||
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Kim, Hyun Wook (Kim, HW) |
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea |
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0000-0001-9101-1028 Kim, Hyun Wook |
[JCR상위 37.7] Linear Synaptic Weight Update in Selector-Less HfO2 RRAM Using Al2O3 Built-In Resistor for Neuromorphic Computing Systems [JCR상위 35.6] Effect of the number and distribution of Al2O3 atomic layer deposition cycles within HfO2 layer on ferroelectric characteristics Highly Contro lable Probabilistic Bits Leveraging Instability of SiOx-Based Threshold Switching Devices for Probabilistic Computing [JCR상위 37.7] Dual Ferroelectric Stack of HfZrO2 /Al:HfO2 With Tunable Coercive Voltage for High-Density Memory Applications [JCR상위 37.7] Demonstration of Threshold Switching in Undoped SiOX Layer for Oscillation Neurons [JCR상위 77.8] Role of oxide barrier in a NbOx layer with noninert electrodes for high-yield threshold switching characteristics [JCR상위 26.6] Back-End-of-Line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments [JCR상위 18.1] Strategy to improve synaptic behavior of ion-actuated synaptic transistors-the use of ion blocking layer to improve state retention |
SCIE | 18.1 |
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED PHYSICS, APPLIED MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED ENGINEERING, ELECTRICAL & ELECTRONIC MULTIDISCIPLINARY SCIENCES |
jiyong.woo@knu.ac.kr; | ||
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Kim, Jin-Gyu (Kim, JG) |
교신저자 | Kyungpook Natl Univ, Sch Elect & Elect Engn, Dept Elect Engn, Daegu 41566, South Korea |
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0000-0002-2768-5295 Kim, Jin-Gyu |
[JCR상위 37.7] Characteristics of high-repetition-rate bipolar pulse DBD under various electrical conditions in atmospheric-pressure air | SCIE | 37.7 | PHYSICS, APPLIED | kjg@knu.ac.kr; | |
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Kim, Nayeon (Kim, N) |
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea Neopons Inc, AI Lab, Daegu, South Korea Neopons Inc, Daegu 41260, South Korea |
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[JCR상위 37.7] Linear Synaptic Weight Update in Selector-Less HfO2 RRAM Using Al2O3 Built-In Resistor for Neuromorphic Computing Systems [JCR상위 8.8] Electrochemical random-access memory: recent advances in materials, devices, and systems towards neuromorphic computing [JCR상위 35.6] Effect of the number and distribution of Al2O3 atomic layer deposition cycles within HfO2 layer on ferroelectric characteristics Highly Contro lable Probabilistic Bits Leveraging Instability of SiOx-Based Threshold Switching Devices for Probabilistic Computing [JCR상위 37.7] Dual Ferroelectric Stack of HfZrO2 /Al:HfO2 With Tunable Coercive Voltage for High-Density Memory Applications [JCR상위 37.7] Demonstration of Threshold Switching in Undoped SiOX Layer for Oscillation Neurons [JCR상위 77.8] Role of oxide barrier in a NbOx layer with noninert electrodes for high-yield threshold switching characteristics [JCR상위 26.6] Back-End-of-Line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments [JCR상위 18.1] Strategy to improve synaptic behavior of ion-actuated synaptic transistors-the use of ion blocking layer to improve state retention [JCR상위 98.6] Information Retrieval Performance on Story Recall in Normal Aging [JCR상위 98.6] The Performance of Story Information Retrieval in Patients with Parkinson's Disease and Normal Pressure Hydrocephalus [JCR상위 17.0] Exploring Voice Acoustic Features Associated with Cognitive Status in Korean Speakers: A Preliminary Machine Learning Study |
SCIE ESCI |
8.8 |
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED PHYSICS, APPLIED ENGINEERING, ELECTRICAL & ELECTRONIC MULTIDISCIPLINARY SCIENCES AUDIOLOGY & SPEECH-LANGUAGE PATHOLOGY MEDICINE, GENERAL & INTERNAL |
jiyong.woo@knu.ac.kr; kimseyoung@postech.ac.kr;jiyong.woo@knu.ac.kr; jw-ha@daegu.ac.kr; jiholee255@neopons.com;nancy@neopons.com;jw-ha@daegu.ac.kr;kangkh@knu.ac.kr;ehmdpark@naver.com;janghyoon@konkuk.ac.kr;kspark@neopons.com; |
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Kim, Seong-Hun (Kim, SH) |
제1저자 |
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea Jeonbuk Natl Univ Hosp, Dept Internal Med, Jeonju, South Korea Jeonbuk Natl Univ, Biomed Res Inst, Dept Internal Med, Jeonbuk Natl Univ Hosp,Res Inst Clin Med, Jeonju, South Korea Jeonbuk Natl Univ, Med Sch, Div Gastroenterol, Dept Internal Med, Jeonju, South Korea Jeonbuk Natl Univ, Jeonbuk Natl Univ Hosp, Biomed Res Inst, Res Inst Clin Med, Jeonju, South Korea Jeonbuk Natl Univ, Dept Internal Med, Res Inst Clin Med, Biomed Res Inst,Jeonbuk Natl Univ Hosp, Jeonju, South Korea Jeonbuk Natl Univ, Med Sch, Dept Internal Med, Jeonju, South Korea |
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0000-0003-3805-0903 0000-0002-7592-8060 Kim, Seong-Hun |
[JCR상위 37.7] Characteristics of high-repetition-rate bipolar pulse DBD under various electrical conditions in atmospheric-pressure air [JCR상위 54.1] Advances in self-expandable metal stents for endoscopic ultrasound-guided interventions [JCR상위 0.5] A comparison of novel electrocautery-enhanced lumen-apposing metal stents and plastic stents in endoscopic ultrasound-guided drainage of infected walled-off necrosis: a multicenter randomized study [JCR상위 35.7] Diagnosis and Treatment of Perihilar Cholangiocarcinoma: A National Survey from the Korean Pancreatobiliary Association [JCR상위 35.7] Current Diagnosis and Treatment of Acute Pancreatitis in Korea: A Nationwide Survey [JCR상위 47.3] Practice guidelines for managing extrahepatic biliary tract cancers |
SCIE ESCI |
0.5 |
PHYSICS, APPLIED GASTROENTEROLOGY & HEPATOLOGY GASTROENTEROLOGY & HEPATOLOGY;SURGERY |
kjg@knu.ac.kr; chokb@dsmc.or.kr;drsundeeplakhtakia@gmail.com; mdsewoopark@gmail.com; hjkimmd@korea.ac.kr; gidoctor@snu.ac.kr;minky1973@knu.ac.kr; jspark330@yuhs.ac; |
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Kim, Yunsur (Kim, Y) |
제1저자 |
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu, South Korea Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea |
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[JCR상위 37.7] Linear Synaptic Weight Update in Selector-Less HfO2 RRAM Using Al2O3 Built-In Resistor for Neuromorphic Computing Systems [JCR상위 35.6] Effect of the number and distribution of Al2O3 atomic layer deposition cycles within HfO2 layer on ferroelectric characteristics Highly Contro lable Probabilistic Bits Leveraging Instability of SiOx-Based Threshold Switching Devices for Probabilistic Computing Engineering Strategies in HfOx RRAM-Based Analog Synapses Toward Linear Weight Update for Neuromorphic Hardware Accelerators [JCR상위 37.7] Dual Ferroelectric Stack of HfZrO2 /Al:HfO2 With Tunable Coercive Voltage for High-Density Memory Applications [JCR상위 16.7] Hf0.4Zr0.6O2 Thickness-Dependent Transfer Characteristics of In x Zn1-x O y Channel Ferroelectric FETs [JCR상위 77.8] Role of oxide barrier in a NbOx layer with noninert electrodes for high-yield threshold switching characteristics [JCR상위 26.6] Back-End-of-Line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments |
SCIE | 16.7 |
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED PHYSICS, APPLIED CHEMISTRY, PHYSICAL;MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, ATOMIC, MOLECULAR & CHEMICAL MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED ENGINEERING, ELECTRICAL & ELECTRONIC |
jiyong.woo@knu.ac.kr; |
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