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2021 연구자 정보 (798 / 1146)

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Author Name 제1저자 여부 ⓘ 교신저자 여부 ⓘ Address ResearcherID ORCID Paper Title WoS Edition 최상위 JCR(%) WoS Category Related Email
Lim, Jeong Ok
(Lim, JO) ⓘ 		교신저자 Kyungpook Natl Univ, Joint Inst Regenerat Med, Daegu 41940, South Korea
Kyungpook Natl Univ, Kyungpook Natl Univ Hosp, Biomed Res Inst, Sch Med, Daegu 41940, South Korea
Kyungpook Natl Univ, Kyungpook Natl Univ Hosp, Sch Med, Biomed Res Inst,Joint Inst Regenerat Med, 130 Dongdeok Ro, Daegu 41944, South Korea ⓘ
ⓘ 		0000-0001-8482-9315
Lim, Jeong Ok ⓘ 		Coating Properties of Single and Multi-Layer Graphene Oxide on a Polystyrene Surface
[JCR상위 40.3] Fabrication and Characterization of Graphene Oxide-Coated Plate for Efficient Culture of Stem Cells ⓘ 		ESCI
SCIE ⓘ 		40.3 MATERIALS SCIENCE, MULTIDISCIPLINARY
CELL & TISSUE ENGINEERING;ENGINEERING, BIOMEDICAL ⓘ 		jolim@knu.ac.kr; ⓘ
Park, Danbi
(Park, D) ⓘ 		Kyungpook Natl Univ, Joint Inst Regenerat Med, Daegu 41940, South Korea
Kyungpook Natl Univ, Kyungpook Natl Univ Hosp, Sch Med, Biomed Res Inst,Joint Inst Regenerat Med, 130 Dongdeok Ro, Daegu 41944, South Korea ⓘ
ⓘ
ⓘ 		Coating Properties of Single and Multi-Layer Graphene Oxide on a Polystyrene Surface
[JCR상위 40.3] Fabrication and Characterization of Graphene Oxide-Coated Plate for Efficient Culture of Stem Cells ⓘ 		ESCI
SCIE ⓘ 		40.3 MATERIALS SCIENCE, MULTIDISCIPLINARY
CELL & TISSUE ENGINEERING;ENGINEERING, BIOMEDICAL ⓘ 		jolim@knu.ac.kr; ⓘ
Park, Jaebum
(Park, J) ⓘ 		Kyungpook Natl Univ, Sch Convergence & Fus Syst Engn, Sangju Si 37224, South Korea ⓘ
ⓘ
ⓘ 		Coating Properties of Single and Multi-Layer Graphene Oxide on a Polystyrene Surface
[JCR상위 40.3] Fabrication and Characterization of Graphene Oxide-Coated Plate for Efficient Culture of Stem Cells ⓘ 		ESCI
SCIE ⓘ 		40.3 MATERIALS SCIENCE, MULTIDISCIPLINARY
CELL & TISSUE ENGINEERING;ENGINEERING, BIOMEDICAL ⓘ 		jolim@knu.ac.kr; ⓘ
Shim, Chang Jae
(Shim, CJ) ⓘ 		Corestem Inc, Cent Res Ctr, 255 Pangyo Ro, Seoul 13486, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 40.3] Fabrication and Characterization of Graphene Oxide-Coated Plate for Efficient Culture of Stem Cells ⓘ SCIE ⓘ 40.3 CELL & TISSUE ENGINEERING;ENGINEERING, BIOMEDICAL ⓘ jolim@knu.ac.kr; ⓘ
Yoon, BoHyun
(Yoon, B) ⓘ 		Kyungpook Natl Univ Hosp, BioMed Res Inst, Daegu 41944, South Korea
Kyungpook Natl Univ Hosp, BioMed Res Inst, Daegu 41940, South Korea ⓘ
ⓘ 		0000-0001-6838-9313
YOON, BOHYUN ⓘ 		[JCR상위 40.3] IL-10 Deficiency Aggravates Renal Inflammation, Fibrosis and Functional Failure in High-Fat Dieted Obese Mice
[JCR상위 56.3] Renal Protective Effect of Beluga Lentil Pretreatment for Ischemia-Reperfusion Injury ⓘ 		SCIE ⓘ 40.3 CELL & TISSUE ENGINEERING;ENGINEERING, BIOMEDICAL
BIOTECHNOLOGY & APPLIED MICROBIOLOGY;MEDICINE, RESEARCH & EXPERIMENTAL ⓘ 		dock97@hanmail.net;bijang@yumail.ac.kr;
tgkwon@knu.ac.kr;yunsokha@gmail.com; ⓘ
Baek, Ji-Min
(Baek, JM) ⓘ 		Kyungpook Natl Univ, Elect & Elect Engn Dept, Daegu 41566, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 40.4] Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics ⓘ SCIE ⓘ 40.4 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED ⓘ dae-hyun.kim@ee.knu.ac.kr; ⓘ
Cho, Chuyoung
(Cho, C) ⓘ 		Korea Adv Nano Fab Ctr KANC, Suwon 443270, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 40.4] High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer ⓘ SCIE ⓘ 40.4 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED ⓘ jlee@ee.knu.ac.kr; ⓘ
Hwang, Jae Seok
(Hwang, JS) ⓘ 		Korea Adv Nano Fab Ctr KANC, Suwon 443270, South Korea
Keimyung Univ, Dept Internal Med, Sch Med, Daegu, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 40.4] High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer
[JCR상위 46.8] Multicenter Analysis of Clinical Features and Prognosis of COVID-19 Patients with Hepatic Impairment
[JCR상위 38.5] Diagnostic usefulness of the spot urine sodium/potassium ratio in cirrhotic patients with ascites ⓘ 		SCIE ⓘ 38.5 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED
GASTROENTEROLOGY & HEPATOLOGY
MULTIDISCIPLINARY SCIENCES ⓘ 		jlee@ee.knu.ac.kr;
chung50@dsmc.or.kr;kbs9225@cu.ac.kr;
jangha106@gmail.com; ⓘ
Kim, Eunjin
(Kim, E) ⓘ 		Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea
Yeungnam Univ, Sch Mat Sci & Engn, 280 Daehak Ro, Gyeongbuk 38541, South Korea ⓘ
ⓘ 		0000-0002-4018-345X
kim, eunjin ⓘ 		[JCR상위 40.4] High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer
[JCR상위 37.9] A Simulation Study on the Effects of Interface Charges and Geometry on Vertical GAA GaN Nanowire MOSFET for Low-Power Application
[JCR상위 35.1] The formation of B2-precipitate and its effect on grain growth behavior in aluminum-containing CoCrNi medium-entropy alloy ⓘ 		SCIE ⓘ 35.1 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED
COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;TELECOMMUNICATIONS
MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED ⓘ 		jlee@ee.knu.ac.kr;
mayaputri@ynu.ac.kr;nokeun_park@yu.ac.kr;straumal@issp.ac.ru; ⓘ
Kim, Jeong-Gil
(Kim, JG) ⓘ 		제1저자 Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu, South Korea
Kyungpook Natl Univ, Coll IT Engn, Sch Elect & Elect Engn, Daegu 41566, South Korea
Kyungpook Natl Univ, Coll IT Engn, Sch Elect Engn, Daegu, South Korea
Kyungpook Natl Univ, Sch Elect Engn, Daegu 702701, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 40.4] High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer
[JCR상위 67.2] Suppression of current dispersion in AlGaN/GaN MISHFETs with in-situ AlN passivation layer
[JCR상위 67.2] Mechanism of Proton-Induced electrical degradation of AlGaN/GaN high electron mobility transistors
[JCR상위 67.2] Fabrication and characterization of GaN-based nanostructure field effect transistors
[JCR상위 19.1] Effect of gate dielectrics on characteristics of high-energy proton-irradiated AlGaN/GaN MISHEMTs
[JCR상위 21.1] Enhanced Stability and Sensitivity of AlGaN/GaN-HEMTs pH Sensor by Reference Device ⓘ 		SCIE ⓘ 19.1 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER
CHEMISTRY, PHYSICAL;NUCLEAR SCIENCE & TECHNOLOGY;PHYSICS, ATOMIC, MOLECULAR & CHEMICAL
ENGINEERING, ELECTRICAL & ELECTRONIC;INSTRUMENTS & INSTRUMENTATION;PHYSICS, APPLIED ⓘ 		jlee@ee.knu.ac.kr;
dongseokkim@kaeri.re.kr;jlee@ee.knu.ac.kr;
yandong199@smail.nju.edu.cn;djchen@nju.edu.cn; ⓘ
Kim, Jun-Gyu
(Kim, JG) ⓘ 		Kyungpook Natl Univ, Elect & Elect Engn Dept, Daegu 41566, South Korea
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu, South Korea
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea ⓘ 		AAQ-9204-2021
H-6157-2013
Kim, Junghwan
Kim, Yong ⓘ 		0000-0003-2403-294X
Kim, Jun-Gyu ⓘ 		[JCR상위 40.4] Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics
[JCR상위 90.1] Theoretical and experimental analysis of the source resistance components in In0.7G0.3As quantum-well high-electron-mobility transistors
[JCR상위 54.2] Impact of Sulfur Passivation on Carrier Transport Properties of In0.7Ga0.3As Quantum-Well MOSFETs ⓘ 		SCIE ⓘ 40.4 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED
PHYSICS, MULTIDISCIPLINARY
ENGINEERING, ELECTRICAL & ELECTRONIC ⓘ 		dae-hyun.kim@ee.knu.ac.kr;
dhko@yonsei.ac.kr;dae-hyun.kim@ee.knu.ac.kr;
twkim78@ulsan.ac.kr;dae-hyun.kim@ee.knu.ac.kr; ⓘ
Kim, Sang-Kuk
(Kim, SK) ⓘ 		QSI, Cheonan Si 31044, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 40.4] Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics ⓘ SCIE ⓘ 40.4 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED ⓘ dae-hyun.kim@ee.knu.ac.kr; ⓘ
Kim, Ted
(Kim, T) ⓘ 		QSI, Cheonan Si 31044, South Korea ⓘ H-6157-2013
Kim, Yong ⓘ
ⓘ 		[JCR상위 40.4] Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics ⓘ SCIE ⓘ 40.4 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED ⓘ dae-hyun.kim@ee.knu.ac.kr; ⓘ
Lee, Jung-Hee
(Lee, JH) ⓘ 		교신저자 Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea
Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu, South Korea
Kyungpook Natl Univ, Coll IT Engn, Sch Elect & Elect Engn, Daegu 41566, South Korea
Kyungpook Natl Univ, Coll IT Engn, Sch Elect Engn, Daegu, South Korea
Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea
Kyungpook Natl Univ, Sch Elect Engn, Daegu 702701, South Korea
Yeungnam Univ, Med Ctr, Div Cardiol, Daegu 42415, South Korea ⓘ 		JFT-0292-2023
Lee, Jong Hui ⓘ
ⓘ 		[JCR상위 40.4] High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer
[JCR상위 67.2] Suppression of current dispersion in AlGaN/GaN MISHFETs with in-situ AlN passivation layer
[JCR상위 1.5] Experimental and simulation study of power performance improvement of GaN PIN betavoltaic cell
[JCR상위 1.5] Design and optimization ofGaN-based betavoltaic cell for enhanced output power density
[JCR상위 16.2] Design optimization of GaN diode with p-GaN multi-well structure for high-efficiency betavoltaic cell
[JCR상위 67.2] Mechanism of Proton-Induced electrical degradation of AlGaN/GaN high electron mobility transistors
[JCR상위 67.2] Preface
[JCR상위 37.9] A Simulation Study on the Effects of Interface Charges and Geometry on Vertical GAA GaN Nanowire MOSFET for Low-Power Application
[JCR상위 67.2] Fabrication and characterization of GaN-based nanostructure field effect transistors
[JCR상위 19.1] Effect of gate dielectrics on characteristics of high-energy proton-irradiated AlGaN/GaN MISHEMTs
Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes
[JCR상위 5.1] Strain-induced piezotronic effects in nano-sized GaN thin films
[JCR상위 54.2] Effect of In-Situ Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs
[JCR상위 5.1] Temperature dependence of the piezotronic effect in CdS nanospheres
[JCR상위 21.1] Enhanced Stability and Sensitivity of AlGaN/GaN-HEMTs pH Sensor by Reference Device
Potato Chip-Like 0D Interconnected ZnCo2O4 Nanoparticles for High-Performance Supercapacitors
[JCR상위 61.9] Clinical Implication of 'Obesity Paradox' in Elderly Patients With Acute Myocardial Infarction ⓘ 		SCIE ⓘ 1.5 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED
ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER
ENERGY & FUELS;NUCLEAR SCIENCE & TECHNOLOGY
NUCLEAR SCIENCE & TECHNOLOGY
COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;TELECOMMUNICATIONS
CHEMISTRY, PHYSICAL;NUCLEAR SCIENCE & TECHNOLOGY;PHYSICS, ATOMIC, MOLECULAR & CHEMICAL
CHEMISTRY, PHYSICAL;MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED
ENGINEERING, ELECTRICAL & ELECTRONIC
ENGINEERING, ELECTRICAL & ELECTRONIC;INSTRUMENTS & INSTRUMENTATION;PHYSICS, APPLIED
CARDIAC & CARDIOVASCULAR SYSTEMS ⓘ 		jlee@ee.knu.ac.kr;
dongseokkim@kaeri.re.kr;jlee@ee.knu.ac.kr;
dongseokkim@kaeri.re.kr;
jaehoon03.lee@samsung.com;jlee@ee.knu.ac.kr;ksim@kumoh.ac.kr;
drmspreddy@knu.ac.kr;jlee@ee.knu.ac.kr;jshim@ynu.ac.kr;
jaehoon03.lee@samsung.com;
drmspreddy@knu.ac.kr;drpoornaphy@gmail.com;jshim@ynu.ac.kr;
yandong199@smail.nju.edu.cn;djchen@nju.edu.cn;
drmspreddy@knu.ac.kr;mallikar999@gmail.com;chandrasekar.kuppam@tdtu.edu.vn;vsvprabu@gmail.com;ravimannemr@gmail.com;reddy_vrg@rediffmail.com;jlee@ee.knu.ac.kr;
woongwa@yu.ac.kr; ⓘ
Park, Kyung-Ho
(Park, KH) ⓘ 		Korea Adv Nano Fab Ctr KANC, Suwon 443270, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 40.4] High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer ⓘ SCIE ⓘ 40.4 ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED ⓘ jlee@ee.knu.ac.kr; ⓘ
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