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| Author Name | 제1저자 여부 | 교신저자 여부 | Address | ResearcherID | ORCID | Paper Title | WoS Edition | 최상위 JCR(%) | WoS Category | Related Email |
|---|---|---|---|---|---|---|---|---|---|---|
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Dong, M. G. (Dong, MG) |
Northeastern Univ, Dept Resource & Environm, Shenyang 110819, Peoples R China |
AEN-2933-2022 DONG, Mengge |
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[JCR상위 47.8] Li2O-B2O3-Bi2O3 glasses: gamma-rays and neutrons attenuation study using ParShield/WinXCOM program and Geant4 and Penelope codes [JCR상위 8.6] TeO2-B2O3-ZnO-La2O3 glasses: γ-ray and neutron attenuation characteristics analysis by WinXCOM program, MCNP5, Geant4, and Penelope simulation codes [JCR상위 47.8] Li2O-B2O3-Bi2O3 glasses: gamma-rays and neutrons attenuation study using ParShield/WinXCOM program and Geant4 and Penelope codes (vol 126, 249, 2020) [JCR상위 47.8] B2O3-Bi2O3-TeO2-BaO and TeO2-Bi2O3-BaO glass systems: a comparative assessment of gamma-ray and fast and thermal neutron attenuation aspects [JCR상위 36.4] Estimation of gamma-rays, and fast and the thermal neutrons attenuation characteristics for bismuth tellurite and bismuth boro-tellurite glass systems |
SCIE | 8.6 |
MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED MATERIALS SCIENCE, CERAMICS MATERIALS SCIENCE, MULTIDISCIPLINARY |
gandham@knu.ac.kr;dolee@knu.ac.kr;yooncsmd@gmail.com;taejoon@hanyang.ac.kr; | ||
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Elmahroug, Y. (Elmahroug, Y) |
Univ Tunis El Manar, Fac Sci Tunis, Unite Rech Phys Nucl & Hautes Energies, Tunis 2092, Tunisia Univ Cent, Ecole Cent Polytech Privee Tunis, Tunis, Tunisia Ecole Cent Polytech Privee Tunis, Univ Cent, Tunis, Tunisia |
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[JCR상위 47.8] Li2O-B2O3-Bi2O3 glasses: gamma-rays and neutrons attenuation study using ParShield/WinXCOM program and Geant4 and Penelope codes [JCR상위 8.6] TeO2-B2O3-ZnO-La2O3 glasses: γ-ray and neutron attenuation characteristics analysis by WinXCOM program, MCNP5, Geant4, and Penelope simulation codes [JCR상위 47.8] Li2O-B2O3-Bi2O3 glasses: gamma-rays and neutrons attenuation study using ParShield/WinXCOM program and Geant4 and Penelope codes (vol 126, 249, 2020) [JCR상위 31.8] Reckoning of nuclear radiation attenuation capabilities for binary GeO2-Tl2O, GeO2-Bi2O3, and ternary GeO2-Tl2O-Bi2O3 glasses utilizing pertinent theoretical and computational approaches |
SCIE | 8.6 |
MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED MATERIALS SCIENCE, CERAMICS MATERIALS SCIENCE, MULTIDISCIPLINARY;OPTICS |
gandham@knu.ac.kr;dolee@knu.ac.kr;yooncsmd@gmail.com;taejoon@hanyang.ac.kr; | ||
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Gerken, Nicholas (Gerken, N) |
UTSA UTHSCSA Joint Grad Program Biomed Engn, San Antonio, TX USA Univ Texas Hlth Sci Ctr San Antonio, Dept Orthopaed, San Antonio, TX 78229 USA |
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[JCR상위 47.8] In vivo hydroxyapatite scaffold performance in infected bone defects | SCIE | 47.8 | ENGINEERING, BIOMEDICAL;MATERIALS SCIENCE, BIOMATERIALS | teja.guda@utsa.edu; | ||
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Guda, Teja (Guda, T) |
교신저자 | Univ Texas San Antonio, Dept Biomed Engn, One UTSA Circle,AET 1-356, San Antonio, TX 78249 USA |
A-7286-2009 Guda, Teja |
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[JCR상위 47.8] In vivo hydroxyapatite scaffold performance in infected bone defects | SCIE | 47.8 | ENGINEERING, BIOMEDICAL;MATERIALS SCIENCE, BIOMATERIALS | teja.guda@utsa.edu; | |
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Hollinger, Jeffrey O. (Hollinger, JO) |
Carnegie Mellon Univ, Bone Tissue Engn Ctr, Dept Biomed Engn, Pittsburgh, PA 15213 USA |
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[JCR상위 47.8] In vivo hydroxyapatite scaffold performance in infected bone defects | SCIE | 47.8 | ENGINEERING, BIOMEDICAL;MATERIALS SCIENCE, BIOMATERIALS | teja.guda@utsa.edu; | ||
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Jang, Jaewon (Jang, J) |
Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect Engn, Daegu 41556, South Korea Kyungpook Natl Univ, Sch Elect Engn, Daehakro 80, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect Engn, 80 Daehakro, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect & Elect Engn, 80 Daehak Ro, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect Engn, Daegu, South Korea Kyungpook Natl Univ, Sch Elect Engn, 80 Daehakro, Daegu 702701, South Korea Kyungpook Natl Univ, Sch Elect & Elect Engn, 80 Daehakro, Daegu 41566, South Korea |
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0000-0003-1908-0015 Jang, Jaewon |
[JCR상위 47.8] Fabrication of AlGaN/GaN MISHEMT with dual-metal gate electrode and its performances [JCR상위 78.4] Polycrystalline silicon metal-oxide-semiconductor field-effect transistor-based stacked multi-layer one-transistor dynamic random-access memory with double-gate structure for the embedded systems [JCR상위 17.2] Expeditious and eco-friendly solution-free self-patterning of sol-gel oxide semiconductor thin films [JCR상위 54.0] High performance of solution-processed SnO2 thin-film transistors by promotion of photo-exposure time-dependent carrier transport during the pre-annealing stage [JCR상위 50.9] Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment [JCR상위 61.0] Application of Genetic Algorithm for More Efficient Multi-Layer Thickness Optimization in Solar Cells [JCR상위 52.9] Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO2/SiN Analysis of Logic Inverter Based on Polycrystalline Silicon with Single Grain Boundary [JCR상위 47.8] Simulation of capacitorless dynamic random access memory based on junctionless FinFETs using grain boundary of polycrystalline silicon Analysis of CMOS Logic Inverter Based on Gate-All-Around Field-Effect Transistors with the Strained-Silicon Layer for Improving the Switching Performances [JCR상위 54.0] Improved negative bias stability of sol-gel processed Ti-doped SnO2thin-film transistors Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage [JCR상위 52.9] Numerical Analysis on Effective Mass and Traps Density Dependence of Electrical Characteristics of a-IGZO Thin-Film Transistors [JCR상위 52.9] Polarization-Charge Inversion at Al2O3/GaN Interfaces through Post-Deposition Annealing [JCR상위 2.4] Contact line curvature-induced molecular misorientation of a surface energy patterned organic semiconductor in meniscus-guided coating Theoretical Analysis of Prospects of Organic Photovoltaics as a Multi-Functional Solar Cell and Laser Power Converter for Wireless Power Transfer [JCR상위 34.3] Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method Effect of High-Speed Blade Coating on Electrical Characteristics in Polymer Based Transistors [JCR상위 34.3] Enhancement Mode Flexible SnO2 Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach [JCR상위 52.9] Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors [JCR상위 6.9] Versatile use of ZnO interlayer in hybrid solar cells for self-powered near infra-red photo-detecting application [JCR상위 5.4] Control of silver nanowire-elastomer nanocomposite networks through elaborate direct printing for ultrathin and stretchable strain sensors |
SCIE | 2.4 |
MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED PHYSICS, APPLIED MATERIALS SCIENCE, MULTIDISCIPLINARY ENGINEERING, ELECTRICAL & ELECTRONIC;MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, CONDENSED MATTER ENERGY & FUELS COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED CHEMISTRY, PHYSICAL;MATERIALS SCIENCE, COATINGS & FILMS;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;TELECOMMUNICATIONS CHEMISTRY, PHYSICAL;MATERIALS SCIENCE, MULTIDISCIPLINARY;METALLURGY & METALLURGICAL ENGINEERING MATERIALS SCIENCE, COMPOSITES |
yjyoon1213@gmail.com;imkang@ee.knu.ac.kr; imkang@ee.knu.ac.kr; jhbae@ee.knu.ac.kr; kim@hongik.ac.kr;j1jang@knu.ac.kr; 2014600014@knu.ac.kr;gwena.cs@gmail.com;j1jang@knu.ac.kr;imkang@ee.knu.ac.kr;jaypark@hallym.ac.kr;hyeok.kim@uos.ac.kr;mholee@knu.ac.kr;jhbae@ee.knu.ac.kr; yongsz@knu.ac.kr;fospm22@knu.ac.kr;neilsatriani@knu.ac.kr;lcm1684@knu.ac.kr;jhbae@ee.knu.ac.kr;imkang@ee.knu.ac.kr;kim@hongik.ac.kr;j1jang@knu.ac.kr; j1jang@knu.ac.kr; nrnr14@naver.com;kdk7362@naver.com;rudiny7144@naver.com;imkang@ee.knu.ac.kr;jljang@knu.ac.kr;fomalhout@gmail.com;lang@univ-paris-diderot.fr;jhbae@ee.knu.ac.kr; ys.kim@lamresearch.com;hj.kwon@dgist.ac.kr; hj.kwon@dgist.ac.kr;j1jang@knu.ac.kr; lcm1684@knu.ac.kr;yongsz@knu.ac.kr;fospm22@knu.ac.kr;neilsatriani@knu.ac.kr;jhbae@ee.knu.ac.kr;imkang@ee.knu.ac.kr;hkang@dgist.ac.kr;kim@hongik.ac.kr;j1jang@knu.ac.kr; jhbae@ee.knu.ac.kr;chlee7@snu.ac.kr;hyeok.kim@uos.ac.kr; |
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Jang, Won Douk (Jang, WD) |
Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect Engn, Daegu 41556, South Korea |
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[JCR상위 47.8] Fabrication of AlGaN/GaN MISHEMT with dual-metal gate electrode and its performances [JCR상위 78.4] Polycrystalline silicon metal-oxide-semiconductor field-effect transistor-based stacked multi-layer one-transistor dynamic random-access memory with double-gate structure for the embedded systems Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO2/SiN Analysis of Logic Inverter Based on Polycrystalline Silicon with Single Grain Boundary Analysis of CMOS Logic Inverter Based on Gate-All-Around Field-Effect Transistors with the Strained-Silicon Layer for Improving the Switching Performances Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage |
SCIE | 47.8 |
MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED PHYSICS, APPLIED |
yjyoon1213@gmail.com;imkang@ee.knu.ac.kr; imkang@ee.knu.ac.kr; |
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Jedryka, J. (Jedryka, J) |
Czestochowa Tech Univ, Fac Elect Engn, Czestochowa, Poland |
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0000-0002-7047-6624 Jedryka, Jaroslaw |
[JCR상위 47.8] Third-order nonlinear optical features of zirconia-added lead silicate glass ceramics embedded with Pb2Fe2O5 perovskite crystal phases and role of Fe ions | SCIE | 47.8 | MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED | gnaga9@gmail.com;nvr8@rediffmail.com; | ||
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Jung, Jun Hyeok (Jung, JH) |
제1저자 |
Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect Engn, Daegu 41556, South Korea |
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[JCR상위 47.8] Fabrication of AlGaN/GaN MISHEMT with dual-metal gate electrode and its performances [JCR상위 78.4] Polycrystalline silicon metal-oxide-semiconductor field-effect transistor-based stacked multi-layer one-transistor dynamic random-access memory with double-gate structure for the embedded systems Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO2/SiN Analysis of Logic Inverter Based on Polycrystalline Silicon with Single Grain Boundary Analysis of CMOS Logic Inverter Based on Gate-All-Around Field-Effect Transistors with the Strained-Silicon Layer for Improving the Switching Performances Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage |
SCIE | 47.8 |
MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED PHYSICS, APPLIED |
yjyoon1213@gmail.com;imkang@ee.knu.ac.kr; imkang@ee.knu.ac.kr; |
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Kang, In Man (Kang, IM) |
교신저자 |
Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect Engn, Daegu 41556, South Korea Kyungpook Natl Univ, Sch Elect Engn, Daehakro 80, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect Engn, 80 Daehakro, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect Engn, Daegu 702701, South Korea Kyungpook Natl Univ, Sch Elect & Elect Engn, 80 Daehak Ro, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect Engn, Daegu 702201, South Korea Kyungpook Natl Univ, Sch Elect Engn, Daegu, South Korea Kyungpook Natl Univ, Sch Elect & Elect Engn, 80 Daehakro, Daegu 41566, South Korea |
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[JCR상위 47.8] Fabrication of AlGaN/GaN MISHEMT with dual-metal gate electrode and its performances [JCR상위 35.2] Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density [JCR상위 52.9] Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability [JCR상위 52.9] One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure [JCR상위 78.4] Polycrystalline silicon metal-oxide-semiconductor field-effect transistor-based stacked multi-layer one-transistor dynamic random-access memory with double-gate structure for the embedded systems [JCR상위 17.2] Expeditious and eco-friendly solution-free self-patterning of sol-gel oxide semiconductor thin films [JCR상위 54.0] High performance of solution-processed SnO2 thin-film transistors by promotion of photo-exposure time-dependent carrier transport during the pre-annealing stage Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor [JCR상위 61.0] Application of Genetic Algorithm for More Efficient Multi-Layer Thickness Optimization in Solar Cells Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO2/SiN Analysis of Logic Inverter Based on Polycrystalline Silicon with Single Grain Boundary [JCR상위 47.8] Simulation of capacitorless dynamic random access memory based on junctionless FinFETs using grain boundary of polycrystalline silicon Analysis of CMOS Logic Inverter Based on Gate-All-Around Field-Effect Transistors with the Strained-Silicon Layer for Improving the Switching Performances [JCR상위 40.8] Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage [JCR상위 52.9] Numerical Analysis on Effective Mass and Traps Density Dependence of Electrical Characteristics of a-IGZO Thin-Film Transistors [JCR상위 34.3] Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance [JCR상위 2.4] Contact line curvature-induced molecular misorientation of a surface energy patterned organic semiconductor in meniscus-guided coating Theoretical Analysis of Prospects of Organic Photovoltaics as a Multi-Functional Solar Cell and Laser Power Converter for Wireless Power Transfer Effect of High-Speed Blade Coating on Electrical Characteristics in Polymer Based Transistors [JCR상위 5.4] Control of silver nanowire-elastomer nanocomposite networks through elaborate direct printing for ultrathin and stretchable strain sensors |
SCIE | 2.4 |
MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED CHEMISTRY, ANALYTICAL;INSTRUMENTS & INSTRUMENTATION;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED PHYSICS, APPLIED MATERIALS SCIENCE, MULTIDISCIPLINARY ENGINEERING, ELECTRICAL & ELECTRONIC;MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, CONDENSED MATTER ENERGY & FUELS ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;TELECOMMUNICATIONS CHEMISTRY, PHYSICAL;MATERIALS SCIENCE, COATINGS & FILMS;PHYSICS, APPLIED;PHYSICS, CONDENSED MATTER MATERIALS SCIENCE, COMPOSITES |
yjyoon1213@gmail.com;imkang@ee.knu.ac.kr; yjyoon@kaeri.re.kr;jslee8@kaeri.re.kr;imkang@ee.knu.ac.kr;jlee@ee.knu.ac.kr;dongseokkim@kaeri.re.kr; yjyoon@kaeri.re.kr;jslee8@kaeri.re.kr;dongseokkim@kaeri.re.kr;jlee@ee.knu.ac.kr;imkang@ee.knu.ac.kr; yjyoon@kaeri.re.kr;jslee8@kaeri.re.kr;dongseokkim@kaeri.re.kr;jim782jim@naver.com;imkang@ee.knu.ac.kr; imkang@ee.knu.ac.kr; jhbae@ee.knu.ac.kr; 2014600014@knu.ac.kr;gwena.cs@gmail.com;j1jang@knu.ac.kr;imkang@ee.knu.ac.kr;jaypark@hallym.ac.kr;hyeok.kim@uos.ac.kr;mholee@knu.ac.kr;jhbae@ee.knu.ac.kr; dhson@ee.knu.ac.kr;trthingujam@gmail.com;jgkims2@ee.knu.ac.kr;dae-hyun.kim@ee.knu.ac.kr;imkang@ee.knu.ac.kr;ksim@kumoh.ac.kr;theodoch@minatec.grenoble-inp.fr;ghibaudo@minatec.inpg.fr;sorin@minatec.grenoble-inp.fr;jlee@ee.knu.ac.kr; nrnr14@naver.com;kdk7362@naver.com;rudiny7144@naver.com;imkang@ee.knu.ac.kr;jljang@knu.ac.kr;fomalhout@gmail.com;lang@univ-paris-diderot.fr;jhbae@ee.knu.ac.kr; |
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Kumar, Ashok (Kumar, A) |
Univ Coll, Dept Phys, Benra Dhuri, Punjab, India Univ Coll, Dept Phys, Dhuri, Punjab, India Univ Coll, Benra Dhuri, Punjab, India |
A-7742-2012 Kumar, Ashok |
0000-0001-8905-5304 Kumar, Ashok |
[JCR상위 47.8] Li2O-B2O3-Bi2O3 glasses: gamma-rays and neutrons attenuation study using ParShield/WinXCOM program and Geant4 and Penelope codes [JCR상위 8.6] TeO2-B2O3-ZnO-La2O3 glasses: γ-ray and neutron attenuation characteristics analysis by WinXCOM program, MCNP5, Geant4, and Penelope simulation codes [JCR상위 47.8] Li2O-B2O3-Bi2O3 glasses: gamma-rays and neutrons attenuation study using ParShield/WinXCOM program and Geant4 and Penelope codes (vol 126, 249, 2020) [JCR상위 47.8] B2O3-Bi2O3-TeO2-BaO and TeO2-Bi2O3-BaO glass systems: a comparative assessment of gamma-ray and fast and thermal neutron attenuation aspects [JCR상위 31.8] Reckoning of nuclear radiation attenuation capabilities for binary GeO2-Tl2O, GeO2-Bi2O3, and ternary GeO2-Tl2O-Bi2O3 glasses utilizing pertinent theoretical and computational approaches [JCR상위 10.6] Binary B2O3-Bi2O3 glasses: scrutinization of directly and indirectly ionizing radiations shielding abilities [JCR상위 7.3] Comparative study of gamma-ray shielding features and some properties of different heavy metal oxide-based tellurite-rich glass systems |
SCIE | 7.3 |
MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED MATERIALS SCIENCE, CERAMICS MATERIALS SCIENCE, MULTIDISCIPLINARY;OPTICS MATERIALS SCIENCE, MULTIDISCIPLINARY;METALLURGY & METALLURGICAL ENGINEERING CHEMISTRY, PHYSICAL;NUCLEAR SCIENCE & TECHNOLOGY;PHYSICS, ATOMIC, MOLECULAR & CHEMICAL |
gandham@knu.ac.kr;dolee@knu.ac.kr;yooncsmd@gmail.com;taejoon@hanyang.ac.kr; | ||
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Lee, Sang Ho (Lee, SH) |
Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect Engn, Daegu 41556, South Korea Kyungpook Natl Univ, Sch Elect & Elect Engn, 80 Daehak Ro, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect Engn, Daegu 702201, South Korea Kyung Hee Univ Hosp Gangdong, Nephrol, Seoul, South Korea Kyung Hee Univ, Dept Internal Med, Sch Med, Seoul, South Korea |
MCX-8396-2025 Lee, Sang Ho |
0000-0002-4954-3861 Lee, Sang Ho |
[JCR상위 47.8] Fabrication of AlGaN/GaN MISHEMT with dual-metal gate electrode and its performances [JCR상위 52.9] One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure [JCR상위 78.4] Polycrystalline silicon metal-oxide-semiconductor field-effect transistor-based stacked multi-layer one-transistor dynamic random-access memory with double-gate structure for the embedded systems Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO2/SiN Analysis of Logic Inverter Based on Polycrystalline Silicon with Single Grain Boundary [JCR상위 47.8] Simulation of capacitorless dynamic random access memory based on junctionless FinFETs using grain boundary of polycrystalline silicon Analysis of CMOS Logic Inverter Based on Gate-All-Around Field-Effect Transistors with the Strained-Silicon Layer for Improving the Switching Performances Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage [JCR상위 34.3] Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance [JCR상위 10.0] THE EARLY RISE OF URINARY EXOSOMAL BK VIRUS MICRORNA AS A PREDICTIVE MARKER FOR BK VIRUS NEPHROPATHY IN A PROSPECTIVE KIDNEY TRANSPLANTATION COHORT [JCR상위 49.7] Insulin Secretion and Insulin Resistance Trajectories over 1 Year after Kidney Transplantation: A Multicenter Prospective Cohort Study |
SCIE | 10.0 |
MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED PHYSICS, APPLIED COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;TELECOMMUNICATIONS TRANSPLANTATION;UROLOGY & NEPHROLOGY ENDOCRINOLOGY & METABOLISM |
yjyoon1213@gmail.com;imkang@ee.knu.ac.kr; yjyoon@kaeri.re.kr;jslee8@kaeri.re.kr;dongseokkim@kaeri.re.kr;jim782jim@naver.com;imkang@ee.knu.ac.kr; imkang@ee.knu.ac.kr; dltngudgs@aumc.ac.kr;twinstwins@hanmail.net; |
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McBride, Sean (McBride, S) |
Carnegie Mellon Univ, Bone Tissue Engn Ctr, Dept Biomed Engn, Pittsburgh, PA 15213 USA |
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[JCR상위 47.8] In vivo hydroxyapatite scaffold performance in infected bone defects | SCIE | 47.8 | ENGINEERING, BIOMEDICAL;MATERIALS SCIENCE, BIOMATERIALS | teja.guda@utsa.edu; | ||
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Mun, Hye Jin (Mun, HJ) |
제1저자 |
Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea Kyungpook Natl Univ, Sch Elect & Elect Engn, 80 Daehak Ro, Daegu 41566, South Korea |
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Analysis of Logic Inverter Based on Polycrystalline Silicon with Single Grain Boundary [JCR상위 47.8] Simulation of capacitorless dynamic random access memory based on junctionless FinFETs using grain boundary of polycrystalline silicon Analysis of CMOS Logic Inverter Based on Gate-All-Around Field-Effect Transistors with the Strained-Silicon Layer for Improving the Switching Performances |
SCIE | 47.8 | MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED | imkang@ee.knu.ac.kr; | |
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Ong, Joo L. (Ong, JL) |
Univ Texas San Antonio, Dept Biomed Engn, One UTSA Circle,AET 1-356, San Antonio, TX 78249 USA |
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0000-0003-3330-2390 Ong, Joo |
[JCR상위 47.8] In vivo hydroxyapatite scaffold performance in infected bone defects | SCIE | 47.8 | ENGINEERING, BIOMEDICAL;MATERIALS SCIENCE, BIOMATERIALS | teja.guda@utsa.edu; |
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