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2023 연구자 정보 (698 / 1135)

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Author Name 제1저자 여부 ⓘ 교신저자 여부 ⓘ Address ResearcherID ORCID Paper Title WoS Edition 최상위 JCR(%) WoS Category Related Email
Chen, Di
(Chen, D) ⓘ 		Univ Houston, Ctr Superconduct, Dept Phys & Texas, Houston, TX 77204 USA ⓘ
ⓘ
ⓘ 		[JCR상위 23.7] Origin of Topological Hall-Like Feature in Epitaxial SrRuO3 Thin Films ⓘ SCIE ⓘ 23.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED ⓘ qxjia@buffalo.edu;apchen@lanl.gov; ⓘ
Ciniero, Alessandra
(Ciniero, A) ⓘ 		Imperial Coll London, Dept Mech Engn, Tribol Grp, London SW7 2BX, England ⓘ
ⓘ
ⓘ 		[JCR상위 23.7] Rational Design Strategy for Triboelectric Nanogenerators Based on Electron Back Flow and Ionic Defects: The Case of Polytetrafluoroethylene ⓘ SCIE ⓘ 23.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED ⓘ g.fatti18@imperial.ac.uk;hko@kicet.re.kr;kipark@knu.ac.kr;csb@ajou.ac.kr; ⓘ
Corey, Zachary
(Corey, Z) ⓘ 		Univ Buffalo, State Univ New York, Dept Mat Design & Innovat, Buffalo, NY 14260 USA ⓘ
ⓘ
ⓘ 		[JCR상위 23.7] Origin of Topological Hall-Like Feature in Epitaxial SrRuO3 Thin Films ⓘ SCIE ⓘ 23.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED ⓘ qxjia@buffalo.edu;apchen@lanl.gov; ⓘ
Dini, Daniele
(Dini, D) ⓘ 		Imperial Coll London, Dept Mech Engn, Tribol Grp, London SW7 2BX, England ⓘ H-8335-2013
Dini, Daniele ⓘ 		0000-0002-5518-499X
Dini, Daniele ⓘ 		[JCR상위 23.7] Rational Design Strategy for Triboelectric Nanogenerators Based on Electron Back Flow and Ionic Defects: The Case of Polytetrafluoroethylene ⓘ SCIE ⓘ 23.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED ⓘ g.fatti18@imperial.ac.uk;hko@kicet.re.kr;kipark@knu.ac.kr;csb@ajou.ac.kr; ⓘ
Holt, Martin V.
(Holt, MV) ⓘ 		Argonne Natl Lab, Ctr Nanoscale Mat, Lemont, IL 60439 USA ⓘ
ⓘ 		0000-0003-2640-7100
Holt, Martin ⓘ 		[JCR상위 23.7] Origin of Topological Hall-Like Feature in Epitaxial SrRuO3 Thin Films ⓘ SCIE ⓘ 23.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED ⓘ qxjia@buffalo.edu;apchen@lanl.gov; ⓘ
Hwang, Kyoungho
(Hwang, K) ⓘ 		제1저자 Kyungpook Natl Univ, Grad Sch Artificial Intelligence, Daegu 41566, South Korea ⓘ
ⓘ 		0009-0000-2512-3443
Hwang, Kyoungho ⓘ 		[JCR상위 23.7] Predicting the Refrigerant Amounts Across Air Conditioners With a Domain Adaptive Lightweight Transformer ⓘ SCIE ⓘ 23.7 ENGINEERING, ELECTRICAL & ELECTRONIC;TELECOMMUNICATIONS ⓘ ririz.papa@gmail.com;zini9405@gmail.com;max.jalali@gmail.com;mholee@gmail.com; ⓘ
Jia, Quanxi
(Jia, QX) ⓘ 		교신저자 Univ Buffalo, State Univ New York, Dept Mat Design & Innovat, Buffalo, NY 14260 USA
SUNY Buffalo, Univ Buffalo, Dept Mat Design & Innovat, Buffalo, NY 14260 USA ⓘ 		Q-5614-2019
Jia, Quanxi ⓘ 		0000-0002-7683-5202
Jia, Quanxi ⓘ 		[JCR상위 23.7] Origin of Topological Hall-Like Feature in Epitaxial SrRuO3 Thin Films
[JCR상위 6.5] Heterogeneous Integration of Freestanding Bilayer Oxide Membrane for Multiferroicity ⓘ 		SCIE ⓘ 6.5 MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED
CHEMISTRY, MULTIDISCIPLINARY;MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY ⓘ 		qxjia@buffalo.edu;apchen@lanl.gov;
ktkang@knu.ac.kr;apchen@lanl.gov; ⓘ
Kang, Kyeong Tae
(Kang, KT) ⓘ 		Kyungpook Natl Univ, Dept Phys, Daegu 41566, South Korea
Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA ⓘ
ⓘ
ⓘ 		[JCR상위 23.7] Origin of Topological Hall-Like Feature in Epitaxial SrRuO3 Thin Films
[JCR상위 6.5] Heterogeneous Integration of Freestanding Bilayer Oxide Membrane for Multiferroicity ⓘ 		SCIE ⓘ 6.5 MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED
CHEMISTRY, MULTIDISCIPLINARY;MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY ⓘ 		qxjia@buffalo.edu;apchen@lanl.gov;
ktkang@knu.ac.kr;apchen@lanl.gov; ⓘ
Kwak, Dongyub
(Kwak, D) ⓘ 		Daegu Ctr, Korea Basic Sci Inst, Daegu 41566, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 23.7] Rational Design Strategy for Triboelectric Nanogenerators Based on Electron Back Flow and Ionic Defects: The Case of Polytetrafluoroethylene ⓘ SCIE ⓘ 23.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED ⓘ g.fatti18@imperial.ac.uk;hko@kicet.re.kr;kipark@knu.ac.kr;csb@ajou.ac.kr; ⓘ
Lee, Han Uk
(Lee, HU) ⓘ 		Ajou Univ, Dept Energy Syst Res, Suwon 16499, Gyeonggi Do, South Korea
Ajou Univ, Dept Mat Sci & Engn, Suwon 16499, Gyeonggi Do, South Korea ⓘ
ⓘ 		0000-0003-1631-260X
Lee, Han Uk ⓘ 		[JCR상위 23.7] Rational Design Strategy for Triboelectric Nanogenerators Based on Electron Back Flow and Ionic Defects: The Case of Polytetrafluoroethylene ⓘ SCIE ⓘ 23.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED ⓘ g.fatti18@imperial.ac.uk;hko@kicet.re.kr;kipark@knu.ac.kr;csb@ajou.ac.kr; ⓘ
Lee, Junwon
(Lee, JW) ⓘ 		Kyungpook Natl Univ, Grad Sch Artificial Intelligence, Daegu 41566, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 23.7] Predicting the Refrigerant Amounts Across Air Conditioners With a Domain Adaptive Lightweight Transformer ⓘ SCIE ⓘ 23.7 ENGINEERING, ELECTRICAL & ELECTRONIC;TELECOMMUNICATIONS ⓘ ririz.papa@gmail.com;zini9405@gmail.com;max.jalali@gmail.com;mholee@gmail.com; ⓘ
Lee, Sang-Geul
(Lee, SG) ⓘ 		Daegu Ctr, Korea Basic Sci Inst, Daegu 41566, South Korea ⓘ
ⓘ
ⓘ 		[JCR상위 23.7] Rational Design Strategy for Triboelectric Nanogenerators Based on Electron Back Flow and Ionic Defects: The Case of Polytetrafluoroethylene ⓘ SCIE ⓘ 23.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED ⓘ g.fatti18@imperial.ac.uk;hko@kicet.re.kr;kipark@knu.ac.kr;csb@ajou.ac.kr; ⓘ
Lin, Shizeng
(Lin, SZ) ⓘ 		T 4 Alamos Natl Lab, T 4 & Ctr Integrated Nanotechnol CINT, Los Alamos, NM 87545 USA ⓘ B-2906-2008
Lin, Shi-Zeng ⓘ
ⓘ 		[JCR상위 23.7] Origin of Topological Hall-Like Feature in Epitaxial SrRuO3 Thin Films ⓘ SCIE ⓘ 23.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED ⓘ qxjia@buffalo.edu;apchen@lanl.gov; ⓘ
Pateras, Anastasios
(Pateras, A) ⓘ 		Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA ⓘ
ⓘ
ⓘ 		[JCR상위 23.7] Origin of Topological Hall-Like Feature in Epitaxial SrRuO3 Thin Films ⓘ SCIE ⓘ 23.7 MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED ⓘ qxjia@buffalo.edu;apchen@lanl.gov; ⓘ
Paudel, Binod
(Paudel, B) ⓘ 		Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA ⓘ AGG-6627-2022
Paudel, Binod ⓘ
ⓘ 		[JCR상위 23.7] Origin of Topological Hall-Like Feature in Epitaxial SrRuO3 Thin Films
[JCR상위 6.5] Heterogeneous Integration of Freestanding Bilayer Oxide Membrane for Multiferroicity ⓘ 		SCIE ⓘ 6.5 MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY;PHYSICS, APPLIED
CHEMISTRY, MULTIDISCIPLINARY;MATERIALS SCIENCE, MULTIDISCIPLINARY;NANOSCIENCE & NANOTECHNOLOGY ⓘ 		qxjia@buffalo.edu;apchen@lanl.gov;
ktkang@knu.ac.kr;apchen@lanl.gov; ⓘ
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