연구성과로 돌아가기
2023 연구성과 (173 / 285)
※ 컨트롤 + 클릭으로 열별 다중 정렬 가능합니다.
Excel 다운로드
| WoS | SCOPUS | Document Type | Document Title | Abstract | Authors | Affiliation | ResearcherID (WoS) | AuthorsID (SCOPUS) | Author Email(s) | Journal Name | JCR Abbreviation | ISSN | eISSN | Volume | Issue | WoS Edition | WoS Category | JCR Year | IF | JCR (%) | FWCI | FWCI Update Date | WoS Citation | SCOPUS Citation | Keywords (WoS) | KeywordsPlus (WoS) | Keywords (SCOPUS) | KeywordsPlus (SCOPUS) | Language | Publication Stage | Publication Year | Publication Date | DOI | JCR Link | DOI Link | WOS Link | SCOPUS Link |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ○ | ○ | Article | Oncological impact of intraperitoneal chemotherapy after cytoreductive surgery for patients with colorectal peritoneal metastasis: A bi-institutional retrospective analysis | Background and objectivesThere is a paucity of evidence on the value of intraperitoneal chemotherapy (IPC) following cytoreductive surgery (CRS) for colorectal peritoneal metastasis. This study aimed to evaluate the association between mitomycin C-IPC and survival outcomes following CRS. MethodsThe institutional databases of two tertiary hospitals were reviewed to identify patients who underwent CRS for colorectal peritoneal metastasis. The outcomes of patients who underwent CRS without IPC were compared with those of patients who underwent CRS plus early postoperative intraperitoneal chemotherapy (EPIC) or CRS plus hyperthermic intraperitoneal chemotherapy (HIPEC). The primary endpoints were cancer-specific survival (CSS), progression-free survival (PFS), and peritoneal PFS (P-PFS). ResultsIn 149 patients with peritoneal metastasis alone, EPIC and HIPEC use was significantly associated with better CSS, PFS, and P-PFS in the multivariate analysis. CSS was also significantly associated with perioperative systemic chemotherapy. Among 42 patients with both peritoneal and extraperitoneal metastases, CSS was independently related to the completeness of cytoreduction score, location of extraperitoneal metastasis, and grade 3-4 complications. ConclusionsMitomycin C-IPC after CRS was associated with better survival outcomes than CRS alone in patients with resectable peritoneal metastasis of colorectal cancer. This study found that IPC had beneficial effects regarding P-PFS in patients with both peritoneal and extraperitoneal metastases. | Park, Soo Yeun; Park, Jun Seok; Kim, Hye Jin; Kim, Jong Gwang; Kang, Byung Woog; Baek, Jin Ho; Kim, Hyeong Rok; Kim, Chang Hyun; Kim, Young Jin; Choi, Gyu-Seog | Kyungpook Natl Univ, Chilgok Hosp, Colorectal Canc Ctr, Sch Med, 807 Hogukro, Daegu 41404, South Korea; Kyungpook Natl Univ, Chilgok Hosp, Sch Med, Dept Oncol Hematol, Daegu, South Korea; Chonnam Natl Univ, Hwasun Hosp, Dept Surg, Hwasun, South Korea; Med Sch, Hwasun, South Korea; St Carollo Gen Hosp, Dept Surg, Suncheon Si, South Korea | Kim, chang/F-6457-2013; Park, Joonhong/AAZ-9885-2020; Kim, Hye/W-1059-2019 | 40561578300; 35226761100; 57204567554; 59501049300; 28567838500; 57217075847; 55943824800; 57214805950; 57207443378; 8058759100 | psy-flower@daum.net; | JOURNAL OF SURGICAL ONCOLOGY | J SURG ONCOL | 0022-4790 | 1096-9098 | 127 | 4 | SCIE | ONCOLOGY;SURGERY | 2023 | 2 | 37.5 | 0.24 | 2025-06-25 | 1 | 1 | chemotherapy; colorectal neoplasms; cytoreduction surgical procedures; peritoneal metastasis; intraperitoneal chemotherapy | SYSTEMIC CHEMOTHERAPY; OPEN-LABEL; CANCER; CARCINOMATOSIS; MULTICENTER; PROGNOSIS; FLUOROURACIL; IRINOTECAN; MANAGEMENT; SURVIVAL | chemotherapy; colorectal neoplasms; cytoreduction surgical procedures; intraperitoneal chemotherapy; peritoneal metastasis | Antineoplastic Combined Chemotherapy Protocols; Chemotherapy, Cancer, Regional Perfusion; Colorectal Neoplasms; Combined Modality Therapy; Cytoreduction Surgical Procedures; Humans; Hyperthermia, Induced; Mitomycin; Peritoneal Neoplasms; Retrospective Studies; Survival Rate; capecitabine; fluorouracil; folinic acid; irinotecan; mitomycin; oxaliplatin; antineoplastic agent; mitomycin; aged; Article; cancer patient; cancer specific survival; chemotherapy; colorectal cancer; cytoreductive surgery; data base; early postoperative intraperitoneal chemotherapy; female; human; hyperthermic intraperitoneal chemotherapy; intestine resection; major clinical study; male; medical record review; minimally invasive surgery; multimodality cancer therapy; open surgery; outcome assessment; perioperative period; peritoneum metastasis; postoperative complication; postoperative period; progression free survival; retrospective study; surgical mortality; systemic therapy; tertiary care center; colorectal tumor; cytoreductive surgery; pathology; peritoneum tumor; regional perfusion; survival rate; thermotherapy | English | 2023 | 2023-03 | 10.1002/jso.27171 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | |
| ○ | ○ | Article | A Retro-Aldol Reaction Prompted the Evolvability of a Phosphotransferase System for the Utilization of a Rare Sugar | Microorganisms generate energy through glycolysis, which might have preceded a rapid burst of evolution, including the evolution of cellular respiration in the primordial biosphere. However, little is known about the evolvability of cellular sugar preferences. The evolution of the bacterial phosphotransferase system (PTS) linked to glycolysis is dependent on the availability of naturally occurring sugars. Although bacteria exhibit sugar specificities based on carbon catabolite repression, the acquisition and evolvability of the cellular sugar preference under conditions that are suboptimal for growth (e.g., environments rich in a rare sugar) are poorly understood. Here, we generated Escherichia coli mutants via a retro-aldol reaction to obtain progeny that can utilize the rare sugar d-tagatose. We detected a minimal set of adaptive mutations in the d-fructose-specific PTS to render E. coli capable of d-tagatose utilization. These E. coli mutant strains lost the tight regulation of both the d-fructose and N-acetyl-galactosamine PTS following deletions in the binding site of the catabolite repressor/activator protein (Cra) upstream from the fruBKA operon and in the agaR gene, encoding the N-acetylgalactosamine (GalNAc) repressor, respectively. Acquired d-tagatose catabolic pathways then underwent fine-tuned adaptation via an additional mutation in 1-phosphofructose kinase to adjust metabolic fluxes. We determined the evolutionary trajectory at the molecular level, providing insights into the mechanism by which enteric bacteria evolved a substrate preference for the rare sugar d-tagatose. Furthermore, the engineered E. coli mutant strain could serve as an in vivo high-throughput screening platform for engineering non-phosphosugar isomerases to produce rare sugars.IMPORTANCE Microorganisms generate energy through glycolysis, which might have preceded a rapid burst of evolution, including the evolution of cellular respiration in the primordial biosphere. However, little is known about the evolvability of cellular sugar preferences. Here, we generated Escherichia coli mutants via a retro-aldol reaction to obtain progeny that can utilize the rare sugar d-tagatose. Consequently, we identified mutational hot spots and determined the evolutionary trajectory at the molecular level. This provided insights into the mechanism by which enteric bacteria evolved substrate preferences for various sugars, accounting for the widespread occurrence of these taxa. Furthermore, the adaptive laboratory evolution-induced cellular chassis could serve as an in vivo high-throughput screening platform for engineering tailor-made non-phosphorylated sugar isomerases to produce low-calorigenic rare sugars showing antidiabetic, antihyperglycemic, and antitumor activities. | Joo, Yunhye; Sung, Jae-Yoon; Shin, Sun-Mi; Park, Sun Jun; Kim, Kyoung Su; Park, Ki Duk; Kim, Seong-Bo; Lee, Dong-Woo | Yonsei Univ, Dept Biotechnol, Seoul, South Korea; Kyungpook Natl Univ, Sch Appl Biosci, Daegu, South Korea; Korea Inst Sci & Technol KIST, Brain Sci Inst, Seoul, South Korea; Korea Univ Sci & Technol, KIST Sch, Div Biomed Sci & Technol, Seoul, South Korea; Yonsei Univ, Global Leaders Coll, Bioliving Engn Major, Seoul, South Korea; CJ CheilJedang Corp, Inst Biotechnol, Suwon, South Korea | 58235591500; 57211241011; 56447615600; 57211413376; 57290645700; 57191756606; 8630528500; 57195068659 | leehicam@yonsei.ac.kr; | MICROBIOLOGY SPECTRUM | MICROBIOL SPECTR | 2165-0497 | 11 | 2 | SCIE | MICROBIOLOGY | 2023 | 3.7 | 37.6 | 0.17 | 2025-06-25 | 1 | 1 | phosphotransferase system; sugar preference; adaptive laboratory evolution; rare sugar; d-tagatose | L-ARABINOSE ISOMERASE; D-TAGATOSE; ESCHERICHIA-COLI; CARBOHYDRATE-METABOLISM; EVOLUTION; PATHWAYS; ENZYMES; PURIFICATION; EXPRESSION; PROMOTER | adaptive laboratory evolution; D-tagatose; phosphotransferase system; rare sugar; sugar preference | fructose bisphosphate aldolase; n acetylgalactosamine; phosphotransferase; recombinant enzyme; sugar; tagatose; Article; bacterial growth; bacterial strain; bacterium culture; binding site; bioinformatics; chemical reaction; circular dichroism; controlled study; DNA extraction; DNA sequencing; enzyme activity; enzyme kinetics; enzyme purification; Escherichia coli; evolvability; gene editing; gene expression; gene mutation; high throughput screening; molecular cloning; nonhuman; protein expression; real time polymerase chain reaction; retro-aldol reaction; RNA extraction; sequence alignment; sequence homology | English | 2023 | 2023-04-13 | 10.1128/spectrum.03660-22 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | |||
| ○ | ○ | Article | Effects of Organic Additives on Alkaline Non-Cyanide Zinc Electroplating | We investigated the effects and interactions of the organic additives Polyquaternium-2 (PUB) and 1-benzyl pyridinium-3-carboxylate (BPC) in alkaline non-cyanide zinc electroplating. As PUB and BPC were added, the cathode potential of the polarization curve shifted in the negative direction at the same current density that occurred in the electrochemical experiment, and as confirmed by a scanning electron microscopy, the particles on the plating surface in the zinc deposits became finer, and the grain size decreased. Moreover, strong (101) and (002) peaks appeared in the X-ray diffraction pattern when no additive was added. However, as PUB and BPC were added, the intensity of the two peaks decreased, and an increase in the intensity of the (100) peak changed to a crystallographic orientation. With the addition of PUB and BPC, the gloss and whiteness gradually increased, and the surface roughness decreased. Finally, the throwing power tended to increase as PUB and BPC were added. | Jeon, Su-Byung; Son, Byung-Ki; Choi, Ji-Won; Son, Injoon | Kyungpook Natl Univ, Dept Mat Sci & Met Engn, Daegu 41566, South Korea; ILSUNG Plating Co Ltd, R&D Ctr, Daegu 42697, South Korea | 57878356900; 57877801800; 57878356800; 9942975800 | milk3275@naver.com;lsung70@ilsung70.com;rhrwl6@naver.com;ijson@knu.ac.kr; | COATINGS | COATINGS | 2079-6412 | 13 | 4 | SCIE | MATERIALS SCIENCE, COATINGS & FILMS;MATERIALS SCIENCE, MULTIDISCIPLINARY;PHYSICS, APPLIED | 2023 | 2.9 | 37.7 | 0 | 2025-06-25 | 0 | 1 | zinc electroplating; organic additives; alkaline electrolytes; non-cyanide; Polyquaternium-2; high corrosion resistance | CORROSION BEHAVIOR; ELECTRODEPOSITION; ALLOY | alkaline electrolytes; high corrosion resistance; non-cyanide; organic additives; Polyquaternium-2; zinc electroplating | English | 2023 | 2023-04 | 10.3390/coatings13040781 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | ||||
| ○ | ○ | Article | Experimental Robust Spontaneous Synchronizations in Coupled NbOx Oscillation Neurons for Unconventional Computing | In this brief, we demonstrate experimentally achieved oscillation dynamics in coupled NbOx thresholds witch (TS)-based oscillation neurons (ONs). We first show the challenges in observing oscillation caused by devicevariability, which is further validated through HSPICE simulations. To obtain robust oscillation response, a reliable TS developed via atomic layer deposition for conformal NbOx is introduced. By developing coupled NbO(x )ONs using acoupling resistor (RC), the out-of-phase synchronizationis demonstrated owing to the weak connection. Moreover,we achieve a transition to in-phase synchronization as the coupling strength increases, showing an inverse relation-ship with the magnitude of R-C. Based on these results,oscillatory neural networks, where multiple NbO(x )ONs arefully connected, are examined to execute pattern recognition via MATALB simulations | Kim, Hyun Wook; Kang, Seung-Youl; Moon, Jaehyun; Kim, Nayeon; Hong, Eunryeong; Jeon, Seyeong; Jeon, Seonuk; Woo, Jiyong | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea; Elect & Telecommun Res Inst, Daejeon 34129, South Korea; Ulsan Natl Inst Sci & Technol, Sch Mech Engn, Ulsan 44919, South Korea | ; Kang, Seung-Youl/JDD-8544-2023 | 57557016000; 7405686721; 8834503900; 59884547500; 57556070800; 58523437300; 57955098300; 53985749100 | jiyong.woo@knu.ac.kr; | IEEE TRANSACTIONS ON ELECTRON DEVICES | IEEE T ELECTRON DEV | 0018-9383 | 1557-9646 | 70 | 12 | SCIE | ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2023 | 2.9 | 37.7 | 0.74 | 2025-06-25 | 4 | 7 | Image processing; oscillatory neural network (ONN); NbOx; threshold switching | RECOGNITION; MEMORY | Image processing; NbO<sub>x</sub>; oscillatory neural network (ONN); threshold switching | Atomic layer deposition; Couplings; Image processing; Neural networks; Neurons; Resistors; Synchronization; > <tex-math notation="LaTeX">$_{\textit{x}}$</tex-math> </inline-formula>; Images processing; NbO<inline-formula xmlns:ali="; Oscillatory neural network; Oscillatory neural networks; Threshold switches; Threshold switching; Xmlns:mml="; Xmlns:xlink="; Xmlns:xsi="; Threshold voltage | English | 2023 | 2023-12 | 10.1109/ted.2023.3321018 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | |
| ○ | ○ | Article | Hybrid Precision in Resistive Memory-Based Convolutional Kernel for Fault-Resilient Neuromorphic Systems | As simple convolution computation is intensively and iteratively performed to extract features from input images, cross-point arrays with resistive random access memory (RRAM) serving as a kernel weight can accelerate the relevant mathematical operations in hardware. However, considering actual RRAM characteristics, either variability or unexpected permanent failure from the filamentary switching mechanism is observed, degrading recognition performance. This study investigates the impact of fault in a conventional kernel structure, where two adjacent columns in the array represent a single weight, on feature extraction using MATLAB. First, the fault types of HfOx -based multilevel RRAM is categorized. The results reveal that the unidirectional fault of RRAM primarily worsens the accuracy of image recognition. This is because the subtraction of negative weights from positive ones is crucial for identifying the edges of images through convolution operations. Therefore, we exploit a kernel structure, in which a single column dedicated to negative weights is located next to a matrix of positive weights. In addition, we reduce the weight precision for negative weights, while quantizing positive weights to higher bits. By mitigating the subtraction errors achieved by the kernel structure with hybrid precision, we improved fault tolerance, minimizing accuracy degradation. | Jeon, Seonuk; Hong, Eunryeong; Kang, Heebum; Kim, Hyun Wook; Kim, Nayeon; Woo, Jiyong | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41569, South Korea | 57955098300; 57556070800; 57232405900; 57557016000; 59884547500; 53985749100 | jiyong.woo@knu.ac.kr; | IEEE TRANSACTIONS ON ELECTRON DEVICES | IEEE T ELECTRON DEV | 0018-9383 | 1557-9646 | 70 | 4 | SCIE | ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2023 | 2.9 | 37.7 | 0.25 | 2025-06-25 | 2 | 2 | Convolution kernel; convolutional neural network (CNN); edge detection; resistive memory | DEVICES | Convolution kernel; convolutional neural network (CNN); edge detection; resistive memory | Convolution; Extraction; Fault tolerance; Feature extraction; Image processing; Image recognition; Neural networks; RRAM; Tin; Convolution kernel; Convolutional kernel; Convolutional neural network; Features extraction; Image edge detection; Kernel; Kernel structure; Random access memory; Resistive memory; Edge detection | English | 2023 | 2023-04 | 10.1109/ted.2023.3244761 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | ||
| ○ | ○ | Article | Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation | We report the impact from channel composition on the cryogenic low-noise performance at low dc power for a 100-nm gate-length InGaAs-InAlAs-InP high-electron mobility transistor (HEMT). Two indium (In) channel compositions, 65% and 80%, were studied by dc and RF characterization at 300 and 5 K. For the cryogenic low-noise optimization, it was important to increase the transconductance to gate-source capacitance ratio in the weak inversion region implying that a higher maximum cut-off frequency in the HEMT does not guarantee lower noise. The HEMT noise performance was obtained from noise measurements in a hybrid three-stage 4-8-GHz (C-band) low-noise amplifier (LNA) down to 300-mu W dc power dissipation. While the HEMT LNA noise performance for both the channel compositions at 300 K was found to be comparable, the HEMT LNA at 5 K with 65% In channel showed a minimum noise temperature of 1.4 K, whereas the noise temperature in the HEMT LNA with 80% In channel HEMTs increased to 2.4 K. The difference in the noise became more pronounced at reduced dc power dissipation. The ultralow dc power of 300 mu W demonstrated for a cryogenic C-band LNA with an average noise temperature of 2.9 K and 24-dB gain is of interest for future qubit read-out electronics at 4 K. | Cha, Eunjung; Wadefalk, Niklas; Moschetti, Giuseppe; Pourkabirian, Arsalan; Stenarson, Jorgen; Li, Junjie; Kim, Dae-Hyun; Grahn, Jan | Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden; IBM Res Zurich, CH-8803 Ruschlikon, Switzerland; Low Noise Factory AB, S-41263 Gothenburg, Sweden; Qamcom Res & Technol AB, S-41285 Gothenburg, Sweden; Kyungpook Natl Univ, Sch Elect Engn, Daegu 702701, South Korea | ; Moschetti, Giuseppe/MDS-9824-2025; Kim, Junghwan/AAQ-9204-2021; Pourkabirian, Arsalan/D-6639-2012; Cha, Eunjung/AAL-6036-2020 | 57191609728; 6505995017; 35092915700; 55969690100; 6602738162; 57798419500; 57212363794; 7004175807 | cha@zurich.ibm.com;wadefalk@lownoisefactory.com;dae-hyun.kim@ee.knu.ac.kr;jan.grahn@chalmers.se; | IEEE TRANSACTIONS ON ELECTRON DEVICES | IEEE T ELECTRON DEV | 0018-9383 | 1557-9646 | 70 | 5 | SCIE | ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2023 | 2.9 | 37.7 | 1.96 | 2025-06-25 | 15 | 16 | HEMTs; Logic gates; Indium phosphide; III-V semiconductor materials; Cryogenics; Transconductance; Qubit; Cryogenic; dc power; indium (In) channel content; InP high-electron mobility transistor (HEMT); low-noise amplifier (LNA); noise; quantum computer | Cryogenic; dc power; indium (In) channel content; InP high-electron mobility transistor (HEMT); low-noise amplifier (LNA); noise; quantum computer | Arsenic compounds; Capacitance; Cryogenics; Cutoff frequency; Electron mobility; Gallium nitride; High electron mobility transistors; III-V semiconductors; Indium phosphide; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconducting indium phosphide; Structural optimization; Transconductance; Dc power; High electron-mobility transistors; III-V semiconductor material; III/V semiconductors; Indium channel content; InP high-electron mobility transistor; Low noiseamplifier; Low-noise amplifier; Noise; Quanta computers; Quantum computers | English | 2023 | 2023-05 | 10.1109/ted.2023.3255160 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | ||
| ○ | ○ | Article | Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment | Herein, we present a detailed analysis of the effects of O-2 plasma treatment on the AlGaN barrier volume trap states in an Al0.45Ga0.55N/GaN high-electron mobility transistor. Compared to that of the as-grown sample, the single short-pulse I-D-V(GS )characterization of the plasma-treated sample exhibited lower charge trapping inside the AlGaN barrier. The 1/f low-frequency noise characterization revealed a significant reduction of approximately 67% in the volume trap density of the AlGaN barrier layer after O-2 plasma treatment. This was achieved by the formation of Al-O and Ga-O bonds via the penetration of oxygen ions into the AlGaN bulk, which resulted in reduced trap state density in the AlGaN barrier. In addition, the Schot-tky characteristics were improved notably. Consequently, the O-2 plasma-treated sample did not display current collapse and showed steady drain current output under the reverse-sweep drain-stress bias conditions. Further-more, the plasma treatment significantly reduced the RF transconductance (g(m)) collapse in the as-grown sample, and significantly increased the f(T)/f(max) of the plasma-treated sample from 65/70 to 120/230 GHz for L-g = 80 nm devices, respectively. Last, the O-2 plasma-treated sample showed substantial improvements in P-outₘₐₓ, power added effi-ciency (PAE), and linear gain from 1.25 W/mm, 20%, and 15 dB to 2.4 W/mm, 50%, and 19 dB, respectively. | Amir, Walid; Shin, Ju-Won; Shin, Ki-Yong; Chakraborty, Surajit; Cho, Chu-Young; Kim, Jae-Moo; Lee, Sang-Tae; Hoshi, Takuya; Tsutsumi, Takuya; Sugiyama, Hiroki; Matsuzaki, Hideaki; Kim, Dae-Hyun; Kim, Tae-Woo | Univ Ulsan, Dept Elect Elect & Comp Engn, Ulsan 44610, South Korea; Korea Adv Nano Fab Ctr, Suwon 16229, Gyeonggi Do, South Korea; NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan; Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea | ; Sugiyama, Hiroki/P-6476-2019; Chakraborty, Surajit/IXD-2458-2023; Kim, Yong/H-6157-2013; Kim, Junghwan/AAQ-9204-2021; Hoshi, Takuya/JRZ-1293-2023 | 57220184861; 57344071200; 57221120602; 57363002700; 23972116700; 57343343000; 57221766125; 36442190000; 37007126500; 35417698400; 7202461821; 57212363794; 57203495132 | dae-hyun.kim@ee.knu.ac.kr;twkim78@ulsan.ac.kr; | IEEE TRANSACTIONS ON ELECTRON DEVICES | IEEE T ELECTRON DEV | 0018-9383 | 1557-9646 | 70 | 6 | SCIE | ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2023 | 2.9 | 37.7 | 1.6 | 2025-06-25 | 13 | 13 | 1/f low-frequency noise; current gain cut-off frequency (f(T)); GaN high electron mobility transistor (HEMT); O-2 plasma treatment; short-pulse characterization; transconductance (g(m)); unilateral gain cutoff frequency (f(max)) | LOW-FREQUENCY NOISE; CURRENT COLLAPSE | 1/f low-frequency noise; current gain cutoff frequency (fT); GaN high electron mobility transistor (HEMT); O<sub>2</sub>plasma treatment; short-pulse characterization; transconductance (gm); unilateral gain cutoff frequency (fmax) | Aluminum gallium nitride; Aluminum nitride; Computer circuits; Cutoff frequency; Drain current; Electron mobility; High electron mobility transistors; III-V semiconductors; Logic gates; Plasma applications; Semiconductor alloys; Surface treatment; Threshold voltage; Transconductance; 1/f low-frequency noise; > <tex-math notation="LaTeX">$_{\textit{m}}$</tex-math> </inline-formula>); > <tex-math notation="LaTeX">$_{\textit{T}}$</tex-math> </inline-formula>); > <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> plasma treatment; > <tex-math notation="LaTeX">$_{\text{max}}$</tex-math> </inline-formula>); Current gain cutoff frequency; Current gain cutoff frequency (f<inline-formula xmlns:ali="; Gain cutoff frequency; GaN high electron mobility transistor; High electron-mobility transistors; Low-Frequency Noise; O<inline-formula xmlns:ali="; Plasma treatment; Short pulse characterization; Transconductance (g<inline-formula xmlns:ali="; Unilateral gain cutoff frequency (f<inline-formula xmlns:ali="; Wide-band-gap semiconductor; Xmlns:mml="; Xmlns:xlink="; Xmlns:xsi="; Gallium nitride | English | 2023 | 2023-06 | 10.1109/ted.2023.3268626 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | |
| ○ | ○ | Article | Read Disturbance in Cross-Point Phase-Change Memory Arrays-Part II: Array Simulations Considering External Currents | In Part I of this study, we demonstrated that when a high-read current from phase-change memory (PCM) programmed at a high-SET current (ISET) is achieved, melting dynamics in the chalcogenide layer are promoted, thus leading to read disturbances. Therefore, we analyzed additional external current sources that worsened the read disturbances by considering the PCM cell and additional selector and core circuits used in practical applications. By means of HSPICE simulations, the impact of two noticeable external overshoot and inrush currents generated during respective SET and read operations in one-selector and one-PCM (1S-1R) array was investigated. Our findings show that resistance-related components mainly affect the magnitude of the inflowing external current to the 1S-1R cell. The PCM can thus be easily heated up by the current, making the memory state vulnerable to the melting process. For these reasons, we showed that the disturbance primarily observed in the high (SET)-S-I operated PCM can also occur even at low-(SET)-S-I settings, given the actual cross-point array environment. Finally, we explored the maximum achievable array size that ensures disturbance-free read endurance by quantifying the read current to examine the location wherein the melting occurs. | Kim, Donguk; Jang, Jun Tae; Kim, Changwook; Kim, Hyun Wook; Hong, Eunryeong; Ban, Sanghyun; Shin, Minchul; Lee, Hanwool; Lee, Hyung Dong; Mo, Hyun-Sun; Woo, Jiyong; Kim, Dae Hwan | Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea; Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea; SK Hynix, Gyeonggi Do 17336, South Korea | ; Ban, Sanghyun/JDN-0699-2023; Lee, Han-Wool/AAU-5087-2021; Kim, Dong/W-5846-2019 | 57212681896; 56489218700; 57202353919; 57557016000; 57556070800; 57194005984; 59841682400; 58064638600; 21742908500; 36096878000; 53985749100; 57198637496 | jiyong.woo@knu.ac.kr;drlife@kookmin.ac.kr; | IEEE TRANSACTIONS ON ELECTRON DEVICES | IEEE T ELECTRON DEV | 0018-9383 | 1557-9646 | 70 | 2 | SCIE | ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2023 | 2.9 | 37.7 | 0.49 | 2025-06-25 | 2 | 4 | Phase-change memory (PCM); read disturbance; selector; storage class memory (SCM) | Phase-change memory (PCM); read disturbance; selector; storage class memory (SCM) | Delay circuits; Integrated circuits; Melting; Phase change materials; Phase change memory; Delay; In-rush current; Integrated circuit modeling; Phase-change memory; Phased-arrays; Read disturbance; Resistance; Selector; Storage class memory; Storage-class memory; Timing circuits | English | 2023 | 2023-02 | 10.1109/ted.2022.3231807 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | ||
| ○ | ○ | Article | Read Disturbances in Cross-Point Phase-Change Memory Arrays- Part I: Physical Modeling With Phase-Change Dynamics | Phase-change memory (PCM) connected to an additional selector has been implemented in cross-point arrays for storage class memory applications. In the onePCM and one-selector (1S-1R) configuration, the selector should be turned on first to read the resistance state of the PCM. This requires a large read voltage (Vread), and a high read current from the PCM is instantly produced, which causes read disturbances. To understand the underlying mechanism of the disturbance, in this study, we developed a physics-based Verilog-A model to describe the measured electrical behavior of the 1S-1R cell in HSPICE by considering thermally induced crystallization and melting dynamics. Based on VTH, which is the voltage induced when the selector is on, the crystalline and amorphous phases of the PCM can be identified indirectly. Based on the measured data, when the pristine amorphous state of the PCM is programmed by a higher SET current (ISET), VTH decreases owing to enhanced crystallization, leading to a low-resistance state. However, VTH subsequently begins to increase with respect to ISET, which results in a U-shaped VTH-ISET curve. It is inferred that melting is preferred at temperatures above 900 K induced by the high-read current. The VTH increase induced by the amorphization can be explained by transient simulations. The simulation results are in good agreement with the experimental data and reveal that the temperature generated from the 1S-1R cell plays an important role in triggering the unwanted phase transition of the GeSbTe layer during the read operation. | Kim, Donguk; Jang, Jun Tae; Kim, Changwook; Kim, Hyun Wook; Hong, Eunryeong; Ban, Sanghyun; Shin, Minchul; Lee, Hanwool; Lee, Hyung Dong; Mo, Hyun-Sun; Woo, Jiyong; Kim, Dae Hwan | Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea; Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea; SK Hynix, Icheon Si 17336, Gyeonggi Do, South Korea | ; Kim, Dong/W-5846-2019; Ban, Sanghyun/JDN-0699-2023; Lee, Han-Wool/AAU-5087-2021 | 57212681896; 56489218700; 57202353919; 57557016000; 57556070800; 57194005984; 59841682400; 58064638600; 21742908500; 36096878000; 53985749100; 57198637496 | jiyong.woo@knu.ac.kr;drlife@kookmin.ac.kr; | IEEE TRANSACTIONS ON ELECTRON DEVICES | IEEE T ELECTRON DEV | 0018-9383 | 1557-9646 | 70 | 2 | SCIE | ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2023 | 2.9 | 37.7 | 0.49 | 2025-06-25 | 5 | 4 | Phase-change memory (PCM); read distur-bance; selector; storage class memory (SCM) | CRYSTALLIZATION; CELL | Phase-change memory (PCM); read disturbance; selector; storage class memory (SCM) | Dynamics; Phase change materials; Chatbots; Cross point; Phase-change memory; Read current; Read disturbance; Resistance; Selector; Storage class memory; Storage-class memory; Phase change memory | English | 2023 | 2023-02 | 10.1109/ted.2022.3231818 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | |
| ○ | ○ | Article | Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications | present a systematic study on the gate length (L-g) scaling behavior and the impact of the side-recess spacing (L-side) on dc and high-frequency characteristics of In0.8Ga0.2As quantum-well (QW) high-electron-mobility transistors (HEMTs) with L(g )from 10 mu m to 20 nm, for the purpose of understanding the scaling limit of maximum oscillation frequency (f(max)) and thereby demon-strating terahertz devices. The fabricated In0.8Ga0.2As QW HEMTs with L-g = 20 nm and Lside = 150 nm exhibited values of drain-induced-barrier-lowering (DIBL) of 60 mV/V, current-gain cutoff frequency (f(T)) of 0.75 THz, and fmax of 1.1 THz, while the device with L-side = 50 nm showed DIBL of 110 mV/V and f(T)/f(max )of 0.72/0.53 THz. It was central to strictly control short-channel effects (SCEs) from the perspective of DIBL to maximize the improvement of f(max), as Lg was scaled down deeply. In an effort to under-stand the Lg scaling behavior of fmax, we carried out the small-signal modeling for both types of devices and found that the increase of the intrinsic output conductance (goi) played a critical role in determining f(max) in short-Lg HEMTs. On the contrary, the fabricated devices with Lside = 150 nm exhibited a tight control of SCEs at L-g of 20 nm. As a result,f(max) in those devices was boosted to 1.1 THz, and more importantly this high f(max) was maintained even as L-g was scaled down to 20 nm. The results in this work represent the best balance of f(T )and fmax in any transistor technology on any material system, displaying both f(T) and fmax in excess of 700 GHz simultaneously. | Park, Wan-Soo; Jo, Hyeon-Bhin; Kim, Hyo-Jin; Choi, Su-Min; Yoo, Ji-Hoon; Jeong, Hyeon-Seok; George, Sethu; Baek, Ji-Min; Lee, In-Geun; Kim, Tae-Woo; Kim, Sang-Kuk; Yun, Jacob; Kim, Ted; Tsutsumi, Takuya; Sugiyama, Hiroki; Matsuzaki, Hideaki; Lee, Jae-Hak; Kim, Dae-Hyun | Kyungpook Natl Univ, Dept Elect & Elect Engn, Daegu 41566, South Korea; Univ Ulsan, Dept Elect Engn, Ulsan 41610, South Korea; QSI, Cheonan 31044, South Korea; NTT Corp, NTT Device Technol Labs, Atsugi 2430198, Japan | ; Kim, Yong/H-6157-2013; Kim, Ted/JDW-4515-2023; Kim, Junghwan/AAQ-9204-2021; George, Sethu Merin/JVO-6743-2024; Jo, Hyeon Bhin/HLW-9536-2023 | 57222957219; 57202871742; 57202516002; 57825819100; 57545572700; 57200366272; 57204459415; 57189694750; 37016357200; 57203495132; 57221604960; 57221602607; 57221599265; 37007126500; 35417698400; 7202461821; 55690077600; 57212363794 | dae-hyun.kim@ee.knu.ac.kr; | IEEE TRANSACTIONS ON ELECTRON DEVICES | IEEE T ELECTRON DEV | 0018-9383 | 1557-9646 | 70 | 4 | SCIE | ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2023 | 2.9 | 37.7 | 1.35 | 2025-06-25 | 9 | 11 | Cutoff frequency; high-electron-mobility transistor (HEMT); In0.8Ga0.2As; maximum oscillation frequency; short-channel effects (SCEs) | Cutoff frequency; high-electron-mobility transistor (HEMT); In<sub>0.8</sub>Ga<sub>0.2</sub>As; maximum oscillation frequency; short-channel effects (SCEs) | Behavioral research; Computer circuits; Cutoff frequency; Electron mobility; High electron mobility transistors; Indium phosphide; Semiconducting indium gallium arsenide; Semiconducting indium phosphide; Semiconductor alloys; Semiconductor quantum wells; Threshold voltage; Transconductance; > <tex-math notation="LaTeX">$_{\text{0.2}}$</tex-math> </inline-formula>as; > <tex-math notation="LaTeX">$_{\text{0.8}}$</tex-math> </inline-formula>ga<inline-formula xmlns:ali="; Behavioral science; High electron-mobility transistors; High-electron-mobility transistor; III-V semiconductor material; III/V semiconductors; In<inline-formula xmlns:ali="; Maximum oscillation frequency; Short-channel effect; Xmlns:mml="; Xmlns:xlink="; Xmlns:xsi="; III-V semiconductors | English | 2023 | 2023-04 | 10.1109/ted.2022.3231576 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | ||
| ○ | ○ | Article | Thermal Sensing Characteristics of Low-Voltage n-Channel Organic Field-Effect Transistors With Triple Layers of Naphthalenediimide-Containing Conjugated Polymer and Gate-Insulating Polymers | Organic field-effect transistors (OFETs) were fabricated with n-type naphthalenediimide-based conjugated polymer (N2200) as a channel layer and poly(methyl methacrylate) (PMMA)/poly(vinyl alcohol) (PVA) as a gate insulating layer. The OFETs with the N2200/PMMA/PVA triple layers were operated with an n-channel mode at low voltages (<= 5 V) and their electron mobility reached ca. 0.63 cm2/Vmiddots at a drain voltage of 5 V. The drain current of OFETs was gradually increased as the temperature of channel region increased from 25 degrees C to 80 degrees C, whereas no shift in threshold voltage was measured upon the temperature variation. The relative thermal sensitivity of devices was almost linearly increased with the temperature, while a two-stage behavior by a border of ca. 35 degrees C was measured for specific thermal sensitivity. The present n-channel OFETs exhibited excellent thermal sensing performances upon repeated approaching/retracting tests using a heat source. | Lee, Chulyeon; Lee, Woongki; Song, Myeonghun; Kim, Hwajeong; Kim, Youngkyoo | Kyungpook Natl Univ, KNU Inst Nanophoton Applicat KINPA, Dept Chem Engn, Organ Nanoelect Lab, Daegu 41566, South Korea; Imperial Coll London, Dept Chem, London W12, England; Imperial Coll London, Ctr Processable Elect, London W12, England; L Project Team, Samsung Display, Display Res Ctr, Gyeonggi 17113, South Korea; Kyungpook Natl Univ, Res Inst Environm Sci & Technol, Prior Res Ctr, Daegu 41566, South Korea | 56354831300; 59041346100; 56714449400; 15520531700; 10340424400 | lcyyeon@knu.ac.kr;lwk227@knu.ac.kr;spentamainyu@nate.com;khj217@knu.ac.kr;ykimm@knu.ac.kr; | IEEE TRANSACTIONS ON ELECTRON DEVICES | IEEE T ELECTRON DEV | 0018-9383 | 1557-9646 | 70 | 2 | SCIE | ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2023 | 2.9 | 37.7 | 0.25 | 2025-06-25 | 2 | 2 | n-channel; organic field-effect transistors (OFETs); thermal sensing; thermal sensitivity; triple polymer layers | DIELECTRICS; ARRAYS | n-channel; organic field-effect transistors (OFETs); thermal sensing; thermal sensitivity; triple polymer layers | Conjugated polymers; Drain current; Esters; Latexes; Sensitivity analysis; Temperature measurement; Temperature sensors; Threshold voltage; Low voltages; N-channel; Organic field-effect transistor; Organic field-effect transistors; Poly(vinyl alcohol) (PVA); Polymer layers; Thermal sensing; Thermal sensitivity; Triple polymer layer; Organic field effect transistors | English | 2023 | 2023-02 | 10.1109/ted.2022.3228217 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | ||
| ○ | ○ | Article | Understanding Rhythmic Synchronization of Oscillatory Neural Networks Based on NbOx Artificial Neurons for Edge Detection | Oscillatory neural networks (ONNs) directly emulate signal communication between biological neurons in the human brain by encoding the data in phase domain, enabling energy-efficient associative memory. An oscillation neuron (ON) element that generates continuous voltage spikes with a specific frequency needs to be designed for hardware implementation. Thus, we systematically investigate the role of the ON in edge detection in ONN systems through simulation. First, a threshold switch is experimentally fabricated for the ON using niobium oxide (NbOx) material, and voltage oscillation is realized in HSPICE and MATLAB. Subsequently, we examine how each voltage oscillation in a coupled-ON system, in which two NbOx-based ONs are connected with a coupling resistance, is mutually synchronized. Simulation results reveal that a small (or large) coupling resistance strengthens the in phase (or out-of-phase) synchronization of the two independent oscillations. The synchronized phase expressed in the form of period is found to be adjusted by tuning various components. As two clearly distinguishable phases are obtained, ONN systems, where multiple ONs are cross-coupled, can be utilized for edge detection during image processing. Patterns are trained using Hebbian learning rule in an ONN system comprising ten ONs, and a feature of the handwritten digit image is accurately extracted. Moreover, the feasibility of accelerating the edge detection step is further explored through various engineering approaches to change the characteristics of the NbOx-based ONs. | Kim, Hyun Wook; Jeon, Seonuk; Kang, Heebum; Hong, Eunryeong; Kim, Nayeon; Woo, Jiyong | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea | 57557016000; 57955098300; 57232405900; 57556070800; 59884547500; 53985749100 | jiyong.woo@knu.ac.kr; | IEEE TRANSACTIONS ON ELECTRON DEVICES | IEEE T ELECTRON DEV | 0018-9383 | 1557-9646 | 70 | 6 | SCIE | ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2023 | 2.9 | 37.7 | 0.86 | 2025-06-25 | 8 | 7 | Associative memory; edge detection; niobium oxide (NbOx); oscillatory neural network (ONN); threshold switch | RECOGNITION | Associative memory; edge detection; niobium oxide (NbOx); oscillatory neural network (ONN); threshold switch | Associative processing; Associative storage; Edge detection; Energy efficiency; MATLAB; Memory architecture; Neural networks; Neurons; Niobium oxide; > <tex-math notation="LaTeX">$_{\textit{x}}\text{)}$</tex-math> </inline-formula>; Associative memory; Image edge detection; Niobium oxide (NbO<inline-formula xmlns:ali="; Oscillatory neural network; Oscillatory neural networks; Resistance; Threshold switches; Xmlns:mml="; Xmlns:xlink="; Xmlns:xsi="; Synchronization | English | 2023 | 2023-06 | 10.1109/ted.2023.3263818 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | ||
| ○ | ○ | Article | Ophiclypeus, a new genus of Cardiochilinae Ashmead (Hymenoptera, Braconidae) from the Oriental region with descriptions of three new species | A new genus of the braconid subfamily Cardiochilinae, Ophiclypeus gen. nov., is described and illustrated based on three new species: O. chiangmaiensis Kang, sp. nov. type species (type locality: Chiang Mai, Thailand), O. dvaravati Ghafouri Moghaddam, Quicke & Butcher, sp. nov. (type locality: Saraburi, Thailand), and O. junyani Kang, sp. nov. (type locality: Dalin, Taiwan). We provide morphological diagnostic characters to separate the new genus from other cardiochiline genera. A modified key cou- plet (couplet 5) and a new key couplet (couplet 16) are provided with detailed images for Dangerfield's key to the world cardiochiline genera to facilitate recognition of Ophiclypeus gen. nov. | Kang, Ilgoo; Moghaddam, Mostafa Ghafouri; Sharkey, Michael J.; Quicke, Donald L. J.; Butcher, Buntika A.; Carlton, Christopher E. | Louisiana State Univ, Agr Ctr, Dept Entomol, 404 Life Sci Bldg, Baton Rouge, LA 70803 USA; Kyungpook Natl Univ, Coll Ecol & Environm Sci, Dept Entomol, Sangju 37224, Gyeongsangbuk D, South Korea; Chulalongkorn Univ, Fac Sci, Dept Biol, Integrat Ecol Lab, Phayathai Rd, Bangkok 10330, Thailand; Hymenoptera Inst, 41482 Alder Dr, Forest Falls, CA 92339 USA | Kang, Ilgoo/AFO-2872-2022; Ghafouri Moghaddam, Mostafa/O-1302-2013; Quicke, Donald/I-5948-2012 | 57199506818; 57212669640; 7004167983; 35578013000; 7006188457; 57203081681 | ikang@knu.ac.kr; | ZOOKEYS | ZOOKEYS | 1313-2989 | 1313-2970 | 1180 | SCIE | ZOOLOGY | 2023 | 1.3 | 37.8 | 0.29 | 2025-06-25 | 1 | 1 | Ichneumonoidea; microgastroid complex; old world; parasitoid wasp; taxonomy | AUSTEROCARDIOCHILES DANGERFIELD; WHITFIELD; REVISION; GENERA; AUSTIN | Ichneumonoidea; microgastroid complex; old world; parasitoid wasp; taxonomy | English | 2023 | 2023-09-15 | 10.3897/zookeys.1180.100106 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | |||
| ○ | ○ | Article | Engineered CD8+T cell-derived extracellular vesicles induce enhanced anti-cancer efficacy and targeting to lung cancer cells | Lung cancer is a common and highly malignant tumor. Although lung cancer treatments continue to advance, conventional therapies are limited and the response rate of patients to immuno-oncology drugs is low. This phenomenon raises an urgent need to develop effective therapeutic strategies for lung cancer. In this study, we genetically modified human primary CD8+ T cells and obtained antitumor extracellular vesicles (EVs) from them. The engineered EVs, containing interlekin-2 and the anti-epidermal growth factor receptor (EGFR) antibody cetuximab on their surfaces, exhibited direct cytotoxicity against A549 human lung cancer cells and increased cancer cell susceptibility to human peripheral blood mononuclear cell-mediated cytotoxicity. In addition, the engineered EVs specifically targeted the lung cancer cells in an EGFR-dependent manner. Taken together, these findings show that surface engineering of cytokines and antibodies on CD8+ T cell-derived EVs not only enhances their antitumor effects but also confers target specificity, suggesting a potential of modifying the immune cellderived EVs in cancer treatment. | Cho, Hanchae; Jung, Inseong; Ju, Hyunji; Baek, Moon-Chang; Yea, Kyungmoo | Kyungpook Natl Univ, Exosome Convergence Res Ctr ECRC, Daegu 41944, South Korea; DGIST, Dept New Biol, Daegu 42988, South Korea; Kyungpook Natl Univ, Exosome Convergence Res Ctr ECRC, Sch Med, Dept Mol Med,CMRI, Daegu 41944, South Korea; DGIST, New Biol Res Ctr, Daegu 43024, South Korea | 57184674000; 57223306535; 58306878500; 7006013097; 12769131100 | mcbaek@knu.ac.kr;ykm31@dgist.ac.kr; | CYTOKINE | CYTOKINE | 1043-4666 | 1096-0023 | 169 | SCIE | BIOCHEMISTRY & MOLECULAR BIOLOGY;CELL BIOLOGY;IMMUNOLOGY | 2023 | 3.7 | 37.9 | 1.68 | 2025-06-25 | 13 | 13 | Extracellular vesicles; Interleukin-2; Cetuximab; Cytotoxic T cell; Lung cancer | HIGH-DOSE INTERLEUKIN-2; ANTITUMOR RESPONSE; EXOSOMES; CHALLENGES; IMMUNITY; CTLS | Cetuximab; Cytotoxic T cell; Extracellular vesicles; Interleukin-2; Lung cancer | CD8-Positive T-Lymphocytes; Cell Line, Tumor; ErbB Receptors; Extracellular Vesicles; Humans; Leukocytes, Mononuclear; Lung Neoplasms; cetuximab; epidermal growth factor receptor antibody; interleukin 2; epidermal growth factor receptor; A-549 cell line; Article; cancer immunotherapy; cancer resistance; cancer therapy; CD8+ T lymphocyte; cell engineering; cell killing; controlled study; cytotoxicity; exosome; genetic modification; human; human cell; immunocompetent cell; lung cancer cell line; peripheral blood mononuclear cell; CD8+ T lymphocyte; lung tumor; metabolism; mononuclear cell; tumor cell line | English | 2023 | 2023-09 | 10.1016/j.cyto.2023.156249 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | |||
| ○ | ○ | Review | The Role of Pyruvate Metabolism in Mitochondrial Quality Control and Inflammation | Pyruvate metabolism, a key pathway in glycolysis and oxidative phosphorylation, is crucial for energy homeostasis and mitochondrial quality control (MQC), including fusion/fission dynamics and mitophagy. Alterations in pyruvate flux and MQC are associated with reactive oxygen species accumulation and Ca2+ flux into the mitochondria, which can induce mitochondrial ultrastructural changes, mitochondrial dysfunction and metabolic dysregulation. Perturbations in MQC are emerging as a central mechanism for the pathogenesis of various metabolic diseases, such as neurodegenerative diseases, diabetes and insulin resistance -related diseases. Mitochondrial Ca2+ regulates the pyruvate dehydrogenase complex (PDC), which is central to pyruvate metabolism, by promoting its dephosphorylation. Increase of pyruvate dehydrogenase kinase (PDK) is associated with perturbation of mitochondria-associated membranes (MAMs) function and Ca2+ flux. Pyruvate metabolism also plays an important role in immune cell activation and function, dysregulation of which also leads to insulin resistance and inflammatory disease. Pyruvate metabolism affects macrophage polarization, mitochondrial dynamics and MAM formation, which are critical in determining macrophage function and immune response. MAMs and MQCs have also been intensively studied in macrophage and T cell immunity. Metabolic reprogramming connected with pyruvate metabolism, mitochondrial dynamics and MAM formation are important to macrophages polarization (M1/M2) and function. T cell differentiation is also directly linked to pyruvate metabolism, with inhibition of pyruvate oxidation by PDKs promoting proinflammatory T cell polarization. This article provides a brief review on the emerging role of pyruvate metabolism in MQC and MAM function, and how dysfunction in these processes leads to metabolic and inflammatory diseases. | Kim, Min-Ji; Lee, Hoyul; Chanda, Dipanjan; Thoudam, Themis; Kang, Hyeon-Ji; Harris, Robert A.; Lee, In-Kyu | Kyungpook Natl Univ, Sch Med, Dept Internal Med, Chilgok Hosp, Daegu 41404, South Korea; Kyungpook Natl Univ, Res Inst Aging & Metab, Daegu 41566, South Korea; Univ Kansas, Dept Biochem & Mol Biol, Med Ctr, Kansas City, KS 66160 USA; Kyungpook Natl Univ, Kyungpook Natl Univ Hosp, Dept Internal Med, Sch Med, Daegu 41944, South Korea | ; Kim, Min-Ji/Z-5205-2019; thoudam, themis/ACM-3919-2022; Chanda, Dipanjan/AAU-3996-2021; Lee, In-Kyu/AAR-6374-2021 | 57206189095; 58017533900; 16416525900; 57192905626; 55946300800; 58710709100; 59060573600 | leei@knu.ac.kr; | MOLECULES AND CELLS | MOL CELLS | 1016-8478 | 0219-1032 | 46 | 5 | SCIE | BIOCHEMISTRY & MOLECULAR BIOLOGY;CELL BIOLOGY | 2023 | 3.7 | 37.9 | 5.34 | 2025-06-25 | 39 | 39 | macrophage; mitochondria-associated membranes; mitochondria quality control; pyruvate dehydrogenase complex; pyruvate dehydrogenase kinase; T cell | ENDOPLASMIC-RETICULUM; AEROBIC GLYCOLYSIS; CA2+ TRANSFER; DEHYDROGENASE; DIFFERENTIATION; MITOPHAGY; CELLS | macrophage; mitochondria quality control; mitochondria-associated membranes; pyruvate dehydrogenase complex; pyruvate dehydrogenase kinase; T cell | Humans; Inflammation; Insulin Resistance; Mitochondria; Pyruvate Dehydrogenase Acetyl-Transferring Kinase; Pyruvates; glucose; pyruvate dehydrogenase kinase; pyruvic acid; pyruvate dehydrogenase kinase; pyruvic acid derivative; Article; cell organelle; citric acid cycle; endoplasmic reticulum; glucose metabolism; human; inflammation; inflammatory disease; macrophage; metabolic disorder; metabolism; mitochondrial membrane; mitochondrion; nonhuman; quality control; T lymphocyte; inflammation; insulin resistance; metabolism; mitochondrion | English | 2023 | 2023-05 | 10.14348/molcells.2023.2128 | 바로가기 | 바로가기 | 바로가기 | 바로가기 |
페이지 이동: