연구성과로 돌아가기
2020 연구성과 (169 / 270)
※ 컨트롤 + 클릭으로 열별 다중 정렬 가능합니다.
Excel 다운로드
| WoS | SCOPUS | Document Type | Document Title | Abstract | Authors | Affiliation | ResearcherID (WoS) | AuthorsID (SCOPUS) | Author Email(s) | Journal Name | JCR Abbreviation | ISSN | eISSN | Volume | Issue | WoS Edition | WoS Category | JCR Year | IF | JCR (%) | FWCI | FWCI Update Date | WoS Citation | SCOPUS Citation | Keywords (WoS) | KeywordsPlus (WoS) | Keywords (SCOPUS) | KeywordsPlus (SCOPUS) | Language | Publication Stage | Publication Year | Publication Date | DOI | JCR Link | DOI Link | WOS Link | SCOPUS Link |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ○ | ○ | Article | Hybrid Solar-RF Energy Harvesting Systems for Electric Operated Wheelchairs | Over the decades, with the advancement of science and technology, wheelchairs have undergone remarkable changes, such as controlling an electrical wheelchair by using brain signals. However, existing electrical wheelchairs still need improvements in terms of energy management. This paper proposes an hybrid Solar-Radio frequency (RF) harvesting system able to supply power for the continuous and effective operation of electrically powered wheelchairs. This system can simultaneously harvest power from RF and solar source that are both available in the surrounding environment. A maximum power point tracking (MPPT) and a boost converter are exclusively employed for the standalone solar system while the standalone RF system is equipped with a 9-stage voltage multiplier (VM). The voltage level for the charging process is obtained by adding the output voltage of each source. In addition, a current booster and a stabilizer are used to reach the required level of current and pin the charging voltage to a stable level, respectively. Simulation results show how the hybrid system is better and more stable when the boost current and stabilizer are used in the charging system. Moreover, we also provide some analytic results to prove the advantages of this system. | Nguyen, Cuong V.; Nguyen, Minh T.; Quyen, Toan V.; Le, Anh M.; Masaracchia, Antonino; Nguyen, Ha T.; Nguyen, Huy P.; Nguyen, Long D.; Nguyen, Hoa T.; Nguyen, Vinh Q. | Duy Tan Univ, Inst Res & Dev, Danang 550000, Vietnam; Thai Nguyen Univ Technol, Dept Elect Engn, Thai Nguyen 24131, Vietnam; Kyungpook Natl Univ, Sch Elect Engn, Daehakro 80, Daegu 41566, South Korea; Natl Chiao Tung Univ, Coll Elect & Comp Engn, Hsinchu 30010, Taiwan; Queens Univ Belfast, Sch Elect Elect Engn & Comp Sci, Belfast BT3 9DT, Antrim, North Ireland; Thai Nguyen Univ, Dept Elect Engn, Thai Nguyen 24118, Vietnam; Acad Mil Sci & Technol, Dept Elect & Radio Engn, Hanoi 122100, Vietnam | Nguyen, Minh/AAK-1016-2021; Vinh, Nguyen/AAI-2902-2020; Nguyễn, Hương/JUV-6128-2023; Masaracchia, Antonino/ISV-0659-2023; Nguyen, Huy/AFN-7027-2022 | 57215662845; 55415937200; 57215669249; 57215609519; 56454362600; 57216658468; 57215755159; 57191336157; 57216658430; 57193713372 | nguyenvancuong18@duytan.edu.vn;nguyentuanminh@tnut.edu.vn;quyenvantoan.tnut@gmail.com;lemyanh2612@gmail.com;A.Masaracchia@qub.ac.uk;nguyenthituyethoa@tnut.edu.vn;nguyenphuonghuy@tnut.edu.vn;dinhlonghcmut@gmail.com;hant@tnu.edu.vn;vinhquang2808@yahoo.com; | ELECTRONICS | ELECTRONICS-SWITZ | 2079-9292 | 9 | 5 | SCIE | COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2020 | 2.397 | 52.9 | 0.68 | 2025-06-25 | 7 | 13 | solar cells; RF energy harvesting; hybrid energy harvesting; rechargeable batteries; electric wheelchairs | NAVIGATION | Electric wheelchairs; Hybrid energy harvesting; Rechargeable batteries; RF energy harvesting; Solar cells | English | 2020 | 2020-05 | 10.3390/electronics9050752 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | |||
| ○ | ○ | Article | Instability in In0.7Ga0.3As Quantum-Well MOSFETs with Single-Layer Al2O3 and Bi-Layer Al2O3/HfO2 Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress | The instability of transistor characteristics caused by charge trapping under positive bias temperature (PBT) stress in In0.7Ga0.3As metal oxide semiconductor field-effect transistors (MOSFETs) with single-layer Al2O3 and bi-layer Al2O3/HfO2 gate stacks was investigated. The equivalent field across the multi-gate stacks was compared with a single layer used to compare the instability of electrical characteristics. The observed threshold voltage degradation (Delta V-T) was consistent with the phenomenon of fast transient trapping of injected electrons at pre-existing shallow defects in the high-kappa dielectric of HfO2, in which this charging was recovered by applying a relaxation voltage. Excluding the fast-transient charging components, the power law exponent (n), with respect to the time-dependent threshold voltage degradation, ranged from 0.3 to 0.35 for both single-layer Al2O3 and bi-layer Al2O3/HfO2 gate stacks. This long-term (slow) V-T shift, which was strongly correlated with transconductance (G(m)) degradation, was attributed to significant charge trapping in the border trap or/and defect sites within the high-kappa dielectric. | Kwon, Hyuk-Min; Kim, Dae-Hyun; Kim, Tae-Woo | Korea Polytech, Dept Semicond Proc Equipment, Semicond Convergence Campus, Anseong 17550, South Korea; Kyungpook Natl Univ, Dept Elect Engn, Daegu 41566, South Korea; Univ Ulsan, Sch Elect Engn, 93 Daehak Ro, Ulsan 44610, South Korea | Kim, Yong/H-6157-2013; Kim, Junghwan/AAQ-9204-2021 | 55549386600; 57212363794; 57203495132 | hmkwon@kopo.ac.kr;dae-hyun.kim@ee.knu.ac.kr;twkim78@ulsan.ac.kr; | ELECTRONICS | ELECTRONICS-SWITZ | 2079-9292 | 9 | 12 | SCIE | COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2020 | 2.397 | 52.9 | 0.07 | 2025-06-25 | 1 | 1 | InGaAs MOSFET; atomic layer deposition (ALD); interfacial trap density (D-it); charge trapping; instability of electrical characteristics; transconductance (Gm) degradation; positive bias temperature (PBT) stress | TRANSISTORS; MECHANISM | Atomic layer deposition (ALD); Charge trapping; InGaAs MOSFET; Instability of electrical characteristics; Interfacial trap density (D<sub>it</sub>); Positive bias temperature (PBT) stress; Transconductance (Gm) degradation | English | 2020 | 2020-12 | 10.3390/electronics9122039 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | |||
| ○ | ○ | Article | Low Voltage Time-Based Matrix Multiplier-and-Accumulator for Neural Computing System | A time-based matrix multiply-and-accumulate (MAC) operation for a neural computing system is described. A simple and compact time-based matrix MAC structure is proposed that can perform multiplication and accumulation simultaneously in a single multiplier structure, and the hardware complexity is not affected by the matrix input size. To enhance the linearity of the weight factor, an offset-free pulse-width modulator is introduced. The proposed MAC architecture operates at a low supply voltage of 0.5 V while it consumes MAC energy of 0.38 pJ with a 32 nm low-power (LP) predictive technology model (PTM) CMOS process. In addition, the near-subthreshold operation can remove the level shifter to interface between the MAC operator and digital circuits such as static random-access-memory (SRAM) because both can utilize the same level of the supply voltage. The proposed MAC is based on a digital intensive pulse-width modulation, and thus it can further improve its performance and area with more advanced technologies. | Hong, Sungjin; Kang, Heechai; Kim, Jusung; Cho, Kunhee | Univ Texas Austin, Elect & Comp Engn, Austin, TX 78712 USA; Qualcomm Technol Inc, San Diego, CA 92121 USA; Hanbat Natl Univ, Dept Elect & Control Engn, Daejeon 34158, South Korea; Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea; Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea | 57141157700; 56424407400; 36466600600; 57069360800 | sungjin.hong@utexas.edu;heechaikang@gmail.com;jusungkim@hanbat.ac.kr;kunhee@knu.ac.kr; | ELECTRONICS | ELECTRONICS-SWITZ | 2079-9292 | 9 | 12 | SCIE | COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2020 | 2.397 | 52.9 | 0.27 | 2025-06-25 | 3 | 5 | MAC; matrix multiplier; neural computing; near-subthreshold; neural network; time-based analog matrix multiplier | PROCESSOR; CIRCUITS; NETWORK; SOC | MAC; Matrix multiplier; Near-subthreshold; Neural computing; Neural network; Time-based analog matrix multiplier | English | 2020 | 2020-12 | 10.3390/electronics9122138 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | ||||
| ○ | ○ | Editorial Material | Mobile Oriented Future Internet (MOFI): Architectural Designs and Experimentations | Koh, Seok-Joo | Kyungpook Natl Univ, Sch Comp Sci & Engn, Daegu 41566, South Korea | 8958394800 | sjkoh@knu.ac.kr; | ELECTRONICS | ELECTRONICS-SWITZ | 2079-9292 | 9 | 4 | SCIE | COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2020 | 2.397 | 52.9 | 0 | 2025-06-25 | 1 | 1 | English | 2020 | 2020-04 | 10.3390/electronics9040682 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | ||||||||
| ○ | ○ | Article | Neighbor Aware Protocols for IoT Devices in Smart Cities-Overview, Challenges and Solutions | The principle of Smart Cities is the interconnection of services, based on a network of Internet of Things (IoT) devices. As the number of IoT devices continue to grow, the demand to organize and maintain the IoT applications is increased. Therefore, the solutions for smart city should have the ability to efficiently utilize the resources and their associated challenges. Neighbor aware solutions can enhance the capabilities of the smart city. In this article, we briefly overview the neighbor aware solutions and challenges in smart cities. We then categorize the neighbor aware solutions and discuss the possibilities using the collaboration among neighbors to extend the lifetime of IoT devices. We also propose a new duty cycle MAC protocol with assistance from the neighbors to extend the lifetime of the nodes. Simulation results further coagulate the impact of neighbor assistance on the performance of IoT devices in smart cities. | Lee, Sungwon; Yaqub, Muhammad Azfar; Kim, Dongkyun | Kyungpook Natl Univ, Sch Comp Sci & Engn, Daegu 41566, South Korea | Yaqub, Muhammad Azfar/A-6965-2015 | 57219637666; 56735926100; 35753648800 | lsw5359@knu.ac.kr;ma.yaqub@ieee.org;dongkyun@knu.ac.kr; | ELECTRONICS | ELECTRONICS-SWITZ | 2079-9292 | 9 | 6 | SCIE | COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2020 | 2.397 | 52.9 | 0.14 | 2025-06-25 | 0 | 2 | internet of things; neighbor assisted; duty-cycle | INTERNET; THINGS | Duty-cycle; Internet of things; Neighbor assisted | English | 2020 | 2020-06 | 10.3390/electronics9060902 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | |||
| ○ | ○ | Article | Numerical Analysis on Effective Mass and Traps Density Dependence of Electrical Characteristics of a-IGZO Thin-Film Transistors | We have investigated the effect of electron effective mass (m(e)*) and tail acceptor-like edge traps density (N-TA) on the electrical characteristics of amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) through numerical simulation. To examine the credibility of our simulation, we found that by adjusting m(e)* to 0.34 of the free electron mass (m(o)), we can preferentially derive the experimentally obtained electrical properties of conventional a-IGZO TFTs through our simulation. Our initial simulation considered the effect of m(e)* on the electrical characteristics independent of N-TA. We varied the m(e)* value while not changing the other variables related to traps density not dependent on it. As m(e)* was incremented to 0.44 m(o), the field-effect mobility (mu(fe)) and the on-state current (I-on) decreased due to the higher sub-gap scattering based on electron capture behavior. However, the threshold voltage (V-th) was not significantly changed due to fixed effective acceptor-like traps (N-TA). In reality, since the magnitude of N-TA was affected by the magnitude of m(e)*, we controlled m(e)* together with N-TA value as a secondary simulation. As the magnitude of both m(e)* and N-TA increased, mu(fe) and Ion deceased showing the same phenomena as the first simulation. The magnitude of V-th was higher when compared to the first simulation due to the lower conductivity in the channel. In this regard, our simulation methods showed that controlling m(e)* and N-TA simultaneously would be expected to predict and optimize the electrical characteristics of a-IGZO TFTs more precisely. | Park, Jihwan; Kim, Do-Kyung; Park, Jun-Ik; Kang, In Man; Jang, Jaewon; Kim, Hyeok; Lang, Philippe; Bae, Jin-Hyuk | Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea; Univ Seoul, Dept Elect & Comp Engn, Seoul 02504, South Korea; Univ Paris Diderot Paris7, CNRS, UMR 7086, ITODYS, 15 Rue Jean Antoine de Baif, F-75205 Paris 13, France | lang, philippe/E-5192-2012 | 59880525700; 57984042900; 57210189987; 7203062678; 57194107504; 57191718658; 36181262200; 35326180700 | nrnr14@naver.com;kdk7362@naver.com;rudiny7144@naver.com;imkang@ee.knu.ac.kr;jljang@knu.ac.kr;fomalhout@gmail.com;lang@univ-paris-diderot.fr;jhbae@ee.knu.ac.kr; | ELECTRONICS | ELECTRONICS-SWITZ | 2079-9292 | 9 | 1 | SCIE | COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2020 | 2.397 | 52.9 | 0.68 | 2025-06-25 | 17 | 17 | a-IGZO thin-film transistors; effective mass; numerical simulation; electrical characteristics; scattering | OXIDE SEMICONDUCTORS; MODEL | A-IGZO thin-film transistors; Effective mass; Electrical characteristics; Numerical simulation; Scattering | English | 2020 | 2020-01 | 10.3390/electronics9010119 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | |||
| ○ | ○ | Article | Numerical Study of Sub-Gap Density of States Dependent Electrical Characteristics in Amorphous In-Ga-Zn-O Thin-Film Transistors | We demonstrate the effect of the sub-gap density of states (DOS) on electrical characteristics in amorphous indium-gallium-zinc (IGZO) thin-film transistors (TFTs). Numerical analysis based on a two-dimensional device simulator Atlas controlled the sub-gap DOS parameters such as tail acceptor-like states, tail donor-like states, Gauss acceptor-like states, and Gauss donor-like states in amorphous IGZO TFTs. We confirm accuracy by exploiting physical factors, such as oxygen vacancy, peroxide, hydrogen complex, band-to-band tunneling, and trap-assisted tunneling. Consequently, the principal electrical parameters, such as the threshold voltage, saturation mobility, sub-threshold swing, and on-off current ratio, are effectively tuned by controlling sub-gap DOS distribution in a-IGZO TFTs. | Kim, Do-Kyung; Park, Jihwan; Zhang, Xue; Park, Jaehoon; Bae, Jin-Hyuk | Kyungpook Natl Univ, Sch Elect & Elect Engn, 80 Daehakro, Daegu 41566, South Korea; Shandong Univ Sci & Technol, Coll Ocean Sci & Engn, Qingdao 266590, Peoples R China; Hallym Univ, Dept Elect Engn, Chunchon 24252, South Korea; Kyungpook Natl Univ, Sch Elect Engn, 80 Daehakro, Daegu 41566, South Korea | 57984042900; 59880525700; 55949859900; 55717156300; 35326180700 | kdk7362@naver.com;nrnr14@naver.com;zhangxue00@sdust.edu.cn;jaypark@hallym.ac.kr;jhbae@ee.knu.ac.kr; | ELECTRONICS | ELECTRONICS-SWITZ | 2079-9292 | 9 | 10 | SCIE | COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2020 | 2.397 | 52.9 | 0.61 | 2025-06-25 | 15 | 17 | In-Ga-Zn-O; thin-film transistors; sub-gap density of states; electrical characteristics; numerical analysis | OXIDE SEMICONDUCTOR | Electrical characteristics; In-Ga-Zn-O; Numerical analysis; Sub-gap density of states; Thin-film transistors | English | 2020 | 2020-10 | 10.3390/electronics9101652 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | ||||
| ○ | ○ | Article | One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure | This paper presents a one-transistor dynamic random-access memory (1T-DRAM) cell based on a gate-all-around junction-less field-effect transistor (GAA-JLFET) with a Si/SiGe heterostructure for high-density memory applications. The proposed 1T-DRAM achieves the sensing margin using the difference in hole density in the body region between '1' and '0' states. The Si/SiGe heterostructure forms a quantum well in the body and reduces the band-to-band tunneling (BTBT) barrier between the body and drain. Compared with the performances of the 1T-DRAM with Si homo-structure, the proposed 1T-DRAM improves the sensing margin and retention time because its storage ability is enhanced by the quantum well. In addition, the thin BTBT barrier reduced the bias condition for the program operation. The proposed 1T-DRAM showed a high potential for memory applications by obtaining a high read current ratio at '1' and '0' states about 10(8) and a long retention time above 10 ms. | Yoon, Young Jun; Lee, Jae Sang; Kim, Dong-Seok; Lee, Sang Ho; Kang, In Man | Korea Atom Energy Res Inst, Korea Multipurpose Accelerator Complex, Gyeongju 38180, South Korea; Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea | ; Lee, Sang Ho/MCX-8396-2025 | 57218864885; 7601467686; 55642581500; 57416738400; 7203062678 | yjyoon@kaeri.re.kr;jslee8@kaeri.re.kr;dongseokkim@kaeri.re.kr;jim782jim@naver.com;imkang@ee.knu.ac.kr; | ELECTRONICS | ELECTRONICS-SWITZ | 2079-9292 | 9 | 12 | SCIE | COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2020 | 2.397 | 52.9 | 0.68 | 2025-06-25 | 19 | 19 | junction-less field-effect transistor; gate-all-around; one-transistor dynamic random-access memory; Si/SiGe heterostructure | CAPACITORLESS 1T-DRAM; RETENTION; FUTURE; TIME; DRAM | Gate-all-around; Junction-less field-effect transistor; One-transistor dynamic random-access memory; Si/SiGe heterostructure | English | 2020 | 2020-12 | 10.3390/electronics9122134 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | |||
| ○ | Article | Partial Bicasting with Buffering for Proxy Mobile IPV6 Mobility Management in CoAP-Based IoT Networks | Constrained application protocol (CoAP) can be used for message delivery in wireless sensor networks. Although CoAP-based proxy mobile internet protocol (PMIP) was proposed for mobility management, it resulted in handover delay and packet loss. Therefore, an enhanced PMIP version 6, with partial bicasting in CoAP-based internet of things (IoT) networks, is proposed. Here, when an IoT device moved into a new network, the corresponding mobile access gateway (MAG) updated the local mobility anchor (LMA) binding. Further, LMA initiated the "partial" bicasting of data packets to the new and the previous MAGs. The data packets were buffered at the new MAG during handover and were forwarded to Mobile Node (MN) after the handover operations. The proposed scheme was compared with the existing scheme, using ns-3 simulations. We demonstrated that the proposed scheme reduced handover delays, packet losses, end-to-end delay, throughput, and energy consumption, compared to the existing scheme. | Gohar, Moneeb; Anwar, Sajid; Ali, Moazam; Choi, Jin-Ghoo; Alquhayz, Hani; Koh, Seok-Joo | Bahria Univ, Dept Comp Sci, Islamabad 44000, Pakistan; Yeungnam Univ, Dept Informat & Commun Engn, Gyongsan 38541, South Korea; Majmaah Univ, Dept Comp Sci & Informat, Coll Sci Zulfi, Al Majmaah 11952, Saudi Arabia; Kyungpoook Natl Univ, Sch Comp Sci & Engn, Daegu 41566, South Korea | Anwar, Sajid/JBJ-1127-2023; Ali, Moazam/GPG-0733-2022 | moneebgohar@gmail.com;sajidanwar699@gmail.com;moazambui@gmail.com;jchoi@yu.ac.kr;h.alquhayz@mu.edu.sa;sjkoh@knu.ac.kr; | ELECTRONICS | ELECTRONICS-SWITZ | 2079-9292 | 9 | 4 | SCIE | COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2020 | 2.397 | 52.9 | 12 | proxy MIPv6; handover; bicasting; buffering; IoT; CoAP | English | 2020 | 2020-04 | 10.3390/electronics9040598 | 바로가기 | 바로가기 | 바로가기 | |||||||||||
| ○ | ○ | Article | Polarization-Charge Inversion at Al2O3/GaN Interfaces through Post-Deposition Annealing | The effects of post-deposition annealing (PDA) on the formation of polarization-charge inversion at ultrathin Al2O3/Ga-polar GaN interfaces are assessed by the analysis of energy band bending and measurement of electrical conduction. The PDA-induced positive interface charges form downward energy band bending at the Al2O3/GaN interfaces with polarization-charge inversion, which is analyzed using X-ray photoelectron spectroscopy. Net charge and interface charge densities at the Al2O3/GaN interfaces are estimated after PDA at 500 degrees C, 700 degrees C, and 900 degrees C. The PDA temperatures affect the formation of charge densities. That is, the charge density increases up to 700 degrees C and then decreases at 900 degrees C. Electrical characteristics of GaN Schottky diodes with ultrathin Al2O3 layers exhibit the passivation ability of the Al(2)O(3)surface layer and the effects of polarization-charge inversion through PDA. This result can be applied to improvement in GaN-based electronic devices where surface states and process temperature work important role in device performance. | Kim, Kwangeun; Jang, Jaewon | Hongik Univ, Dept Elect & Elect Convergence Engn, Sejong 30016, South Korea; Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea | 36004977500; 57194107504 | kim@hongik.ac.kr;j1jang@knu.ac.kr; | ELECTRONICS | ELECTRONICS-SWITZ | 2079-9292 | 9 | 7 | SCIE | COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2020 | 2.397 | 52.9 | 0.14 | 2025-06-25 | 3 | 4 | post-deposition annealing; Al2O3/GaN; interface charge density; polarization-charge inversion | SURFACE PREPARATION; GAN; DIODES; BAND | Al<sub>2</sub>O<sub>3</sub>/GaN; Interface charge density; Polarization-charge inversion; Post-deposition annealing | English | 2020 | 2020-07 | 10.3390/electronics9071068 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | ||||
| ○ | ○ | Article | Siamese High-Level Feature Refine Network for Visual Object Tracking | Siamese network-based trackers are broadly applied to solve visual tracking problems due to its balanced performance in terms of speed and accuracy. Tracking desired objects in challenging scenarios is still one of the fundamental concerns during visual tracking. This research paper proposes a feature refined end-to-end tracking framework with real-time tracking speed and considerable performance. The feature refine network has been incorporated to enhance the target feature representation power, utilizing high-level semantic information. Besides, it allows the network to capture the salient information to locate the target and learns to represent the target feature in a more generalized way advancing the overall tracking performance, particularly in the challenging sequences. But, only the feature refine module is unable to handle such challenges because of its less discriminative ability. To overcome this difficulty, we employ an attention module inside the feature refine network that strengths the tracker discrimination ability between the target and background. Furthermore, we conduct extensive experiments to ensure the proposed tracker's effectiveness using several popular tracking benchmarks, demonstrating that our proposed model achieves state-of-the-art performance over other trackers. | Rahman, Md. Maklachur; Ahmed, Md Rishad; Laishram, Lamyanba; Kim, Seock Ho; Jung, Soon Ki | Kyungpook Natl Univ, Sch Comp Sci & Engn, Daegu 41566, South Korea; Chinese Acad Sci, Inst Automat, Brainnetome Ctr, Beijing 100190, Peoples R China; Chinese Acad Sci, Inst Automat, Natl Lab Pattern Recognit, Beijing 100190, Peoples R China; Univ Chinese Acad Sci, Sch Artificial Intelligence, Beijing 100049, Peoples R China | AHMED, RISHAD/AAD-7001-2021; Rahman, Md Maklachur/GRI-9663-2022; Jung, Soon Ki/P-7687-2018 | 57216556379; 35177456400; 57219930647; 57210913265; 57226791905 | maklachur@knu.ac.kr;2157971471@mails.ucas.ac.cn;yanbalaishram@knu.ac.kr;tjrgh8357@knu.ac.kr;skjung@knu.ac.kr; | ELECTRONICS | ELECTRONICS-SWITZ | 2079-9292 | 9 | 11 | SCIE | COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2020 | 2.397 | 52.9 | 0.34 | 2025-06-25 | 5 | 5 | siamese network; visual object tracking; feature refine network; attention mechanism | Attention mechanism; Feature refine network; Siamese network; Visual object tracking | English | 2020 | 2020-11 | 10.3390/electronics9111918 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | ||||
| ○ | ○ | Article | Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors | Y-doped SnO2 thin film transistors were successfully fabricated by means of sol-gel process. The effect of Y concentration on the structural, chemical, and electrical properties of sol-gel-processed SnO2 films was investigated via GIXRD, SPM, and XPS; the corresponding electrical transport properties of the film were also evaluated. The dopant, Y, can successfully control the free carrier concentration by suppressing the formation of oxygen vacancy inside SnO2 semiconductors due to its lower electronegativity and SEP. With an increase of Ywt%, it was observed that the crystallinity and oxygen vacancy concentration decreased, and the operation mode of SnO2 thin film transistor changed from accumulation (normally on) to enhancement mode (normally off) with a positive V-th shift. | Lee, Changmin; Lee, Won-Yong; Lee, Hyunjae; Ha, Seunghyun; Bae, Jin-Hyuk; Kang, In-Man; Kang, Hongki; Kim, Kwangeun; Jang, Jaewon | Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea; DGIST, Dept Informat & Commun Engn, Daegu 42988, South Korea; Hongik Univ, Dept Elect & Elect Convergence Engn, Sejong 30016, South Korea | Kang, Hongki/AFM-2155-2022 | 57191709616; 57209527128; 26638774100; 57209074248; 35326180700; 7203062678; 36158223200; 36004977500; 57194107504 | lcm1684@knu.ac.kr;yongsz@knu.ac.kr;fospm22@knu.ac.kr;neilsatriani@knu.ac.kr;jhbae@ee.knu.ac.kr;imkang@ee.knu.ac.kr;hkang@dgist.ac.kr;kim@hongik.ac.kr;j1jang@knu.ac.kr; | ELECTRONICS | ELECTRONICS-SWITZ | 2079-9292 | 9 | 2 | SCIE | COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2020 | 2.397 | 52.9 | 1.76 | 2025-06-25 | 30 | 34 | sol-gel; SnO2; thin film transistor; Yttrium doping | PERFORMANCE; TEMPERATURE | SnO<sub>2</sub> ; Sol-gel; Thin film transistor; Yttrium doping | English | 2020 | 2020-02 | 10.3390/electronics9020254 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | |||
| ○ | ○ | Article | Subthreshold Characteristics of AlGaN/GaN MIS-FinFETs with Controlling Threshold Voltages | AlGaN/GaN metal-insulator-semiconductor field-effect transistors with fin structures (AlGaN/GaN MIS-FinFETs) were fabricated and characterized by changing fin width and using different dielectric layers. The FinFET with 20 nm-thick SiO2 dielectric layer exhibits a very small subthreshold swing (SS) of 56 mV/decade. However, the threshold voltage of the device is too low to ensure low off-state leakage current (at the gate voltage of 0 V), even though the fin width of the device is reduced to 30 nm, which would not meet the requirement for low standby power consumption. On the other hand, the FinFET with a 10 nm-thick Al2O3 dielectric layer and a much wider fin width of 100 nm shows normally-off operation with a threshold voltage of 0.8 V, SS of 63 mV/dec, and very low off-state current of 1 nA/mm. When the fin width is reduced to 40 nm, the threshold voltage of the FinFET is increased to 2.3 V and the SS is decreased to 52 mV/decade. These excellent switching performances convince us that the FinFETs might be promising either for low voltage logic or for efficient power switching applications. The observed SS values, which are smaller than the theoretical Boltzmann limit (60 mV/decade), can be explained by the concept of the voltage-dependent effective channel width. | Dai, Quan; Lee, Jung-Hee | Kyungpook Natl Univ, Sch Elect & Elect Engn, Daegu 41566, South Korea | 57200146404; 57196140713 | quanshiduan@knu.ac.kr;jlee@ee.knu.ac.kr; | ELECTRONICS | ELECTRONICS-SWITZ | 2079-9292 | 9 | 11 | SCIE | COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2020 | 2.397 | 52.9 | 0.2 | 2025-06-25 | 2 | 4 | AlGaN; GaN; FinFET; Sub-60 mV; decade | GAN; PERFORMANCE; TECHNOLOGY; TRANSISTOR; HEMT; SI | AlGaN/GaN; FinFET; Sub-60 mV/decade | English | 2020 | 2020-11 | 10.3390/electronics9111967 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | ||||
| ○ | ○ | Article | Ultra-Wideband Trapezoidal Log-Periodic Antenna Integrated with an Elliptical Lens | The design and implementation of an ultra-wideband trapezoidal log-periodic antenna (LPA) integrated with an elliptical dielectric lens are presented. The proposed LPA is fed by an ultra-wideband microstrip-to-coplanar stripline transition structure. In order to improve the radiation patterns and to increase the antenna gain, an elliptical dielectric lens is mounted on the top of the LPA radiator. The design parameters of the elliptical lens integrated with the LPA were optimized through a parametric analysis. The proposed antenna shows an impedance bandwidth (S-11 <= -10 dB) from 5.2 to 40 GHz, with a peak gain of 17.8 dB. | Nashuha, Syifa Haunan; Lee, Gwan Hui; Kumar, Sachin; Choi, Hyun Chul; Kim, Kang Wook | Kyungpook Natl Univ, Coll IT Engn, Sch Elect & Elect Engn, Daegu 41566, South Korea | ; Kumar, Sachin/W-2211-2019 | 57218903778; 57201689364; 56907994000; 57193342681; 57204432422 | nsh11@knu.ac.kr;gwan6088@knu.ac.kr;gupta.sachin0708@gmail.com;hcchoi@ee.knu.ac.kr;kang_kim@ee.knu.ac.kr; | ELECTRONICS | ELECTRONICS-SWITZ | 2079-9292 | 9 | 12 | SCIE | COMPUTER SCIENCE, INFORMATION SYSTEMS;ENGINEERING, ELECTRICAL & ELECTRONIC;PHYSICS, APPLIED | 2020 | 2.397 | 52.9 | 0.34 | 2025-06-25 | 3 | 5 | broadband; dielectric lens; high-gain; log-periodic antenna | MONOPOLE ANTENNA; LPDA ANTENNA; REDUCTION; CPW | Broadband; Dielectric lens; High-gain; Log-periodic antenna | English | 2020 | 2020-12 | 10.3390/electronics9122169 | 바로가기 | 바로가기 | 바로가기 | 바로가기 | |||
| ○ | ○ | Article | Age-dependent efficacy of subthalamic nucleus deep brain stimulation in young- and late-onset Parkinson's disease based on a 10 year follow-up | Introduction: Long-term efficacy and safety of subthalamic nucleus deep brain stimulation (STN DBS) in patients with young-onset Parkinson's disease (YOPD) and late-onset PD (LOPD) (i.e. motor symptom initial appearance at ages 40 years, respectively) was compared to identify relationships between PD onset age and the efficacy of DBS. Methods: Statistical analyses compared specific motor and non-motor features among 13 patients with YOPD and 11 with LOPD. Medication reduction patterns and dyskinesia severity scores at baseline and after 1, 3, 5, and 10 years of follow-up were also analyzed using a repeated measures ANOVA tests. Lastly, a correlation analysis identified relationships between the impact of DBS settings (volume of activated tissue) and levodopa equivalent daily dose (LED), dyskinesia severity scores, Unified Parkinson's Disease Rating Scale (UPDRS) part III, and UPDRS part II (disability) scores. Results: Ten years after DBS surgery, the reduction of LED from baseline (85.9 +/- 592.6 mg versus 623.2 +/- 464.9 mg; p = .023) and levodopa-induced dyskinesia (LID) scores (Unified Dyskinesia Rating Scale [UDysRS] parts III items 16-22; 1.6 +/- 2.8 versus 5.5 +/- 4.1; p = .013) were significantly lower in YOPD patients than LOPD patients. There were no significant differences between the two groups regarding UPDRS part III score improvement in response to levodopa, psychosis occurrence, or adverse effects. Conclusion: Ten years after STN DBS surgery, LOPD patients showed greater LED reduction, and YOPD patients showed greater LID improvement, although the general long-term outcomes were similar between YOPD and LOPD patients. | Kim, Mi Sun; Ryu, Ho-Sung; Park, Kye Won; Choi, Nari; You, Sooyeoun; Kim, Mi-Jung; Kim, Young Jin; Kim, Juyeon; Kim, Kiju; Chung, Sun Ju | Univ Ulsan, Coll Med, Asan Med Ctr, Dept Neurol, 88,Olymp Ro 43 Gil, Seoul 05505, South Korea; Kyungpook Natl Univ Hosp, Dept Neurol, 130 Dongdeok Ro, Daegu 41944, South Korea; Keimyung Univ, Dept Neurol, Dongsan Med Ctr, 1035 Dalgubeol Daero, Daegu 42601, South Korea; Bobath Mem Hosp, Dept Neurol, 155-7 Daewangpangyo Ro, Seongnam Si 13552, Gyeonggi Do, South Korea; Bestheals Hosp, Dept Neurol, 17 Seonjinan Gil, Ansan, Gyeonggi Do, South Korea; Raonheal Hosp, Dept Neurol, 13,Yanghyeon Ro 405Beon Gil, Seongnam Si 13439, Gyeonggi Do, South Korea; Good Light Hosp, Dept Neurol, 119,Gyeongchung Daero 1926Beon Gil, Gwangju Si, Gyeonggi Do, South Korea | 57201330725; 57014206500; 57194448346; 57208574478; 55355547900; 56040577000; 57207443135; 59088802000; 56505680500; 56882955600 | caums@amc.seoul.kr;sjchung@amc.seoul.kr; | JOURNAL OF THE NEUROLOGICAL SCIENCES | J NEUROL SCI | 0022-510X | 1878-5883 | 416 | SCIE | CLINICAL NEUROLOGY;NEUROSCIENCES | 2020 | 3.181 | 53.1 | 0.32 | 2025-06-25 | 4 | 5 | Deep brain stimulation; Age-dependent efficacy; Long-term outcome; Parkinson's disease; Subthalamic nucleus | Age-dependent efficacy; Deep brain stimulation; Long-term outcome; Parkinson's disease; Subthalamic nucleus | Adult; Deep Brain Stimulation; Follow-Up Studies; Humans; Parkinson Disease; Subthalamic Nucleus; Treatment Outcome; entacapone; levodopa; pramipexole; ropinirole; adult; Article; brain depth stimulation; clinical article; clinical effectiveness; clinical feature; disease severity assessment; female; follow up; human; late onset disorder; levodopa-induced dyskinesia; male; middle aged; morning dosage; neurosurgery; onset age; Parkinson disease; patient safety; priority journal; psychosis; rating scale; retrospective study; subthalamic nucleus; treatment response; Unified Parkinson Disease Rating Scale; Parkinson disease; treatment outcome | English | 2020 | 2020-09-15 | 10.1016/j.jns.2020.117004 | 바로가기 | 바로가기 | 바로가기 | 바로가기 |
페이지 이동: